1.1 Gbit/s RF-interconnect based on 10 GHz RF-modulation in 0.18 μm CMOS

H. Shin*, Mau-Chung Chang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

An RF-interconnect transceiver based on the RF-modulation and capacitive coupling for a high speed digital interface is presented. The prototype transceiver is implemented in 0.18 μm CMOS technology. It demonstrates a maximum data rate of 1.1 Gbit/s with a 10 GHz RF-modulation. This RF-interconnect is believed to be instrumental for high-speed link applications in multi-memory and microprocessor interfaces.

Original languageEnglish
Pages (from-to)71-72
Number of pages2
JournalElectronics Letters
Volume38
Issue number2
DOIs
StatePublished - 17 Jan 2002

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