10Gbps operation of a metamorphic InGaP buffered in0.53Ga 0.47As p-i-n photodetector grown on GaAs substrate

Yu Sheng Liao, Gong Ru Lin*, Chi Kuan Lin, Yi Shiang Chu, Hao-Chung Kuo, Milton Feng

*Corresponding author for this work

Research output: Contribution to journalConference article

Abstract

A novel top-illuminated In0.53Ga0.47As p-i-n photodiodes (MM-PINPD) grown on GaAs substrate by using a linearly graded metamorphic InxGa1-xP (x graded from 0.49 to 1) buffer layer has been demonstrated on the SONET OC-192 receiving performance. With a cost-efficient TO-46 package, the MM-PINPD at data rate of 10 Gbit/s can be obtained at minimum optical power of -19.5 dBm. At wavelength of 1550nm, the dark current, optical responsivities, noise equivalent power, and operational bandwidth of the MM-PINPD with aperture diameter of 60 μm are 13 pA, 0.6 A/W, 3.4×10-15 W/Hz1/2, and 8 GHz, respectively. All the parameters are comparable to those of similar devices made on InP substrate or other InGaAs products epitaxially grown on an InGaAlAs buffered GaAs substrate. The performances of the MM-PINPD on GaAs are analyzed by impulse injecting of 1.2-ps pulse-train, eye pattern at 10Gbps, and frequency response from VNA.

Original languageEnglish
Article number602023
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume6020
DOIs
StatePublished - 1 Dec 2005
EventOptoelectronic Materials and Devices for Optical Communications - Shanghai, China
Duration: 7 Nov 200510 Nov 2005

Keywords

  • GaAs
  • InGaAs
  • InGaP
  • Metamorphic
  • OC-192
  • P-i-n Photodetector
  • Receiver

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