100GHz integrated CMOS passive imager with >100MV/W responsivity, 23fW / √hz NEP

Q. J. Gu; Z. Xu; H. Y. Jian; A. Tang; Mau-Chung Chang; C. Y. Huang; C. C. Nien

doi:10.1049/el.2011.0213

100GHz integrated CMOS passive imager with >100MV/W responsivity, 23fW / √hz NEP

Q. J. Gu, Z. Xu, H. Y. Jian, A. Tang, Mau-Chung Chang, C. Y. Huang, C. C. Nien

Department of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Presented is a 100GHz fully differential CMOS passive imager for system-on-chip integration, which features high gain, high sensitivity and high resilience to flicker noise and gain variation. It integrates a low-noise amplifier, a Dicke switch, a detector and a baseband programmable gain amplifier in a single chip, and achieves the best noise equivalent power (NEP) (23fW / √Hz/26fW / √Hz for without/with Dicke switch) in CMOS, the highest responsivity (>100MV/W) in silicon. It also demonstrates 1.96K noise-equivalent temperature difference in 30ms integration time.

Original language	English
Pages (from-to)	544-545
Number of pages	2
Journal	Electronics Letters
Volume	47
Issue number	9
DOIs	https://doi.org/10.1049/el.2011.0213
State	Published - 28 Apr 2011

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@article{f478df916e5d4576ad0e265bfced6451,

title = "100GHz integrated CMOS passive imager with >100MV/W responsivity, 23fW / √hz NEP",

abstract = "Presented is a 100GHz fully differential CMOS passive imager for system-on-chip integration, which features high gain, high sensitivity and high resilience to flicker noise and gain variation. It integrates a low-noise amplifier, a Dicke switch, a detector and a baseband programmable gain amplifier in a single chip, and achieves the best noise equivalent power (NEP) (23fW / √Hz/26fW / √Hz for without/with Dicke switch) in CMOS, the highest responsivity (>100MV/W) in silicon. It also demonstrates 1.96K noise-equivalent temperature difference in 30ms integration time.",

author = "Gu, {Q. J.} and Z. Xu and Jian, {H. Y.} and A. Tang and Mau-Chung Chang and Huang, {C. Y.} and Nien, {C. C.}",

year = "2011",

month = apr,

day = "28",

doi = "10.1049/el.2011.0213",

language = "English",

volume = "47",

pages = "544--545",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "Institution of Engineering and Technology",

number = "9",

}

TY - JOUR

T1 - 100GHz integrated CMOS passive imager with >100MV/W responsivity, 23fW / √hz NEP

AU - Gu, Q. J.

AU - Xu, Z.

AU - Jian, H. Y.

AU - Tang, A.

AU - Chang, Mau-Chung

AU - Huang, C. Y.

AU - Nien, C. C.

PY - 2011/4/28

Y1 - 2011/4/28

N2 - Presented is a 100GHz fully differential CMOS passive imager for system-on-chip integration, which features high gain, high sensitivity and high resilience to flicker noise and gain variation. It integrates a low-noise amplifier, a Dicke switch, a detector and a baseband programmable gain amplifier in a single chip, and achieves the best noise equivalent power (NEP) (23fW / √Hz/26fW / √Hz for without/with Dicke switch) in CMOS, the highest responsivity (>100MV/W) in silicon. It also demonstrates 1.96K noise-equivalent temperature difference in 30ms integration time.

AB - Presented is a 100GHz fully differential CMOS passive imager for system-on-chip integration, which features high gain, high sensitivity and high resilience to flicker noise and gain variation. It integrates a low-noise amplifier, a Dicke switch, a detector and a baseband programmable gain amplifier in a single chip, and achieves the best noise equivalent power (NEP) (23fW / √Hz/26fW / √Hz for without/with Dicke switch) in CMOS, the highest responsivity (>100MV/W) in silicon. It also demonstrates 1.96K noise-equivalent temperature difference in 30ms integration time.

UR - http://www.scopus.com/inward/record.url?scp=79955575440&partnerID=8YFLogxK

U2 - 10.1049/el.2011.0213

DO - 10.1049/el.2011.0213

M3 - Article

AN - SCOPUS:79955575440

VL - 47

SP - 544

EP - 545

JO - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

IS - 9

ER -

100GHz integrated CMOS passive imager with >100MV/W responsivity, 23fW / √hz NEP

Abstract

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