Abstract
Presented is a 100GHz fully differential CMOS passive imager for system-on-chip integration, which features high gain, high sensitivity and high resilience to flicker noise and gain variation. It integrates a low-noise amplifier, a Dicke switch, a detector and a baseband programmable gain amplifier in a single chip, and achieves the best noise equivalent power (NEP) (23fW / √Hz/26fW / √Hz for without/with Dicke switch) in CMOS, the highest responsivity (>100MV/W) in silicon. It also demonstrates 1.96K noise-equivalent temperature difference in 30ms integration time.
| Original language | English |
|---|---|
| Pages (from-to) | 544-545 |
| Number of pages | 2 |
| Journal | Electronics Letters |
| Volume | 47 |
| Issue number | 9 |
| DOIs | |
| State | Published - 28 Apr 2011 |
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Gu, Q. J., Xu, Z., Jian, H. Y., Tang, A., Chang, M-C., Huang, C. Y., & Nien, C. C. (2011). 100GHz integrated CMOS passive imager with >100MV/W responsivity, 23fW / √hz NEP. Electronics Letters, 47(9), 544-545. https://doi.org/10.1049/el.2011.0213