100GHz integrated CMOS passive imager with >100MV/W responsivity, 23fW / √hz NEP

Q. J. Gu, Z. Xu, H. Y. Jian, A. Tang, Mau-Chung Chang, C. Y. Huang, C. C. Nien

Research output: Contribution to journalArticle

7 Scopus citations

Abstract

Presented is a 100GHz fully differential CMOS passive imager for system-on-chip integration, which features high gain, high sensitivity and high resilience to flicker noise and gain variation. It integrates a low-noise amplifier, a Dicke switch, a detector and a baseband programmable gain amplifier in a single chip, and achieves the best noise equivalent power (NEP) (23fW / √Hz/26fW / √Hz for without/with Dicke switch) in CMOS, the highest responsivity (>100MV/W) in silicon. It also demonstrates 1.96K noise-equivalent temperature difference in 30ms integration time.

Original languageEnglish
Pages (from-to)544-545
Number of pages2
JournalElectronics Letters
Volume47
Issue number9
DOIs
StatePublished - 28 Apr 2011

Fingerprint Dive into the research topics of '100GHz integrated CMOS passive imager with >100MV/W responsivity, 23fW / √hz NEP'. Together they form a unique fingerprint.

  • Cite this