Abstract
Presented is a 100GHz fully differential CMOS passive imager for system-on-chip integration, which features high gain, high sensitivity and high resilience to flicker noise and gain variation. It integrates a low-noise amplifier, a Dicke switch, a detector and a baseband programmable gain amplifier in a single chip, and achieves the best noise equivalent power (NEP) (23fW / √Hz/26fW / √Hz for without/with Dicke switch) in CMOS, the highest responsivity (>100MV/W) in silicon. It also demonstrates 1.96K noise-equivalent temperature difference in 30ms integration time.
Original language | English |
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Pages (from-to) | 544-545 |
Number of pages | 2 |
Journal | Electronics Letters |
Volume | 47 |
Issue number | 9 |
DOIs | |
State | Published - 28 Apr 2011 |