100‐GHz CW GaAs/AlGaAs multiquantum‐well impatt oscillators

Chin-Chun Meng*, S. W. Siao, H. R. Fetterman, D. C. Streit, T. R. Block, Y. Saito

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

Multiquantum‐well structures can be applied to the high‐frequency IMPATT oscillators. The first CW operation of GaAs/AlGaAs multiquantum‐well IMPATT oscillators at 100 GHz is reported here. Preliminary results yielded 6.4‐mW CW power at 100.3 GHz in a nonoptimized circuit. Significantly higher powers are anticipated with further optimization of the circuit parameters. The modern epitaxial technology opens up a new field for two‐terminal high‐frequency sources. © 1995 John Wiley & Sons, Inc.

Original languageEnglish
Pages (from-to)4-6
Number of pages3
JournalMicrowave and Optical Technology Letters
Volume10
Issue number1
DOIs
StatePublished - 1 Jan 1995

Keywords

  • IMPATT device
  • millimeter wave
  • multiquantum well
  • oscillator

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