100‐GHz CW GaAs/AlGaAs multiquantum‐well impatt oscillators

Chin-Chun Meng; S. W. Siao; H. R. Fetterman; D. C. Streit; T. R. Block; Y. Saito

doi:10.1002/mop.4650100103

100‐GHz CW GaAs/AlGaAs multiquantum‐well impatt oscillators

Chin-Chun Meng^*, S. W. Siao, H. R. Fetterman, D. C. Streit, T. R. Block, Y. Saito

^*Corresponding author for this work

Institute of Communications Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Multiquantum‐well structures can be applied to the high‐frequency IMPATT oscillators. The first CW operation of GaAs/AlGaAs multiquantum‐well IMPATT oscillators at 100 GHz is reported here. Preliminary results yielded 6.4‐mW CW power at 100.3 GHz in a nonoptimized circuit. Significantly higher powers are anticipated with further optimization of the circuit parameters. The modern epitaxial technology opens up a new field for two‐terminal high‐frequency sources. © 1995 John Wiley & Sons, Inc.

Original language	English
Pages (from-to)	4-6
Number of pages	3
Journal	Microwave and Optical Technology Letters
Volume	10
Issue number	1
DOIs	https://doi.org/10.1002/mop.4650100103
State	Published - 1 Jan 1995

Keywords

IMPATT device
millimeter wave
multiquantum well
oscillator

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10.1002/mop.4650100103

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@article{533940155e48492b972b255ab44eb1da,

title = "100‐GHz CW GaAs/AlGaAs multiquantum‐well impatt oscillators",

abstract = "Multiquantum‐well structures can be applied to the high‐frequency IMPATT oscillators. The first CW operation of GaAs/AlGaAs multiquantum‐well IMPATT oscillators at 100 GHz is reported here. Preliminary results yielded 6.4‐mW CW power at 100.3 GHz in a nonoptimized circuit. Significantly higher powers are anticipated with further optimization of the circuit parameters. The modern epitaxial technology opens up a new field for two‐terminal high‐frequency sources. {\textcopyright} 1995 John Wiley & Sons, Inc.",

keywords = "IMPATT device, millimeter wave, multiquantum well, oscillator",

author = "Chin-Chun Meng and Siao, {S. W.} and Fetterman, {H. R.} and Streit, {D. C.} and Block, {T. R.} and Y. Saito",

year = "1995",

month = jan,

day = "1",

doi = "10.1002/mop.4650100103",

language = "English",

volume = "10",

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journal = "Microwave and Optical Technology Letters",

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T1 - 100‐GHz CW GaAs/AlGaAs multiquantum‐well impatt oscillators

AU - Meng, Chin-Chun

AU - Siao, S. W.

AU - Fetterman, H. R.

AU - Streit, D. C.

AU - Block, T. R.

AU - Saito, Y.

PY - 1995/1/1

Y1 - 1995/1/1

N2 - Multiquantum‐well structures can be applied to the high‐frequency IMPATT oscillators. The first CW operation of GaAs/AlGaAs multiquantum‐well IMPATT oscillators at 100 GHz is reported here. Preliminary results yielded 6.4‐mW CW power at 100.3 GHz in a nonoptimized circuit. Significantly higher powers are anticipated with further optimization of the circuit parameters. The modern epitaxial technology opens up a new field for two‐terminal high‐frequency sources. © 1995 John Wiley & Sons, Inc.

AB - Multiquantum‐well structures can be applied to the high‐frequency IMPATT oscillators. The first CW operation of GaAs/AlGaAs multiquantum‐well IMPATT oscillators at 100 GHz is reported here. Preliminary results yielded 6.4‐mW CW power at 100.3 GHz in a nonoptimized circuit. Significantly higher powers are anticipated with further optimization of the circuit parameters. The modern epitaxial technology opens up a new field for two‐terminal high‐frequency sources. © 1995 John Wiley & Sons, Inc.

KW - IMPATT device

KW - millimeter wave

KW - multiquantum well

KW - oscillator

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DO - 10.1002/mop.4650100103

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JF - Microwave and Optical Technology Letters

SN - 0895-2477

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