Abstract
100-nm indium-gallium-zinc-oxide (IGZO) thinfilm transistors were fabricated with a one-mask process, which takes the advantage of photoresist trimming technique and the concept of film profile engineering (FPE). With I-linebased photolithography, a device with channel length of 97 nm has been successfully fabricated. The FPE device contains a conformal Al 2O3 gate oxide, concave IGZO channel, and discrete source/drain (S/D) Al contacts. Good device characteristics including a high-ON/OFF current ratio (>107) and good subthreshold swing (140 mV/decade) are obtained. Nonetheless, high-S/D series resistance presents a key issue that needs to be addressed for further device performance improvement.
Original language | English |
---|---|
Article number | 6809982 |
Pages (from-to) | 2224-2227 |
Number of pages | 4 |
Journal | IEEE Transactions on Electron Devices |
Volume | 61 |
Issue number | 6 |
DOIs | |
State | Published - 1 Jan 2014 |
Keywords
- Film profile engineering (FPE)
- indium-gallium-zinc-oxide (IGZO)
- metal oxide
- photoresist (PR) trimming
- thin-film transistors (TFTs)