100-nm IGZO thin-film transistors with film profile engineering

Horng-Chih Lin, Bo Shiuan Shie, Tiao Yuan Huang

Research output: Contribution to journalArticlepeer-review

11 Scopus citations


100-nm indium-gallium-zinc-oxide (IGZO) thinfilm transistors were fabricated with a one-mask process, which takes the advantage of photoresist trimming technique and the concept of film profile engineering (FPE). With I-linebased photolithography, a device with channel length of 97 nm has been successfully fabricated. The FPE device contains a conformal Al 2O3 gate oxide, concave IGZO channel, and discrete source/drain (S/D) Al contacts. Good device characteristics including a high-ON/OFF current ratio (>107) and good subthreshold swing (140 mV/decade) are obtained. Nonetheless, high-S/D series resistance presents a key issue that needs to be addressed for further device performance improvement.

Original languageEnglish
Article number6809982
Pages (from-to)2224-2227
Number of pages4
JournalIEEE Transactions on Electron Devices
Issue number6
StatePublished - 1 Jan 2014


  • Film profile engineering (FPE)
  • indium-gallium-zinc-oxide (IGZO)
  • metal oxide
  • photoresist (PR) trimming
  • thin-film transistors (TFTs)

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