(100)- and (110)-oriented nMOSFETs with highly scaled EOT in La-silicate/Si interface for multi-gate architecture

T. Kawanago*, K. Kakushima, P. Ahmet, Y. Kataoka, A. Nishiyama, N. Sugii, K. Tsutsui, K. Natori, T. Hattori, H. Iwai

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

This paper reports on detailed comparison between (100)- and (110)-oriented nMOSFETs with direct contact of La-silicate/Si interface structure for expansion to multi-gate architecture including FinFETs, trigate FETs, and nanowire FETs. Scaled EOT of 0.73 nm for (110)-oriented nMOSFETs has been achieved as well as (100)-oriented nMOSFETs. Although the large interface state density originating from (110) orientation was observed, fairly nice interfacial property was obtained from (110)-oriented nMOSFETs at scaled EOT region. Moreover, larger interface state density in (110) orientation did not affect on Vth instability. It was found that Vth shift of nMOSFETs is mainly caused by bulk trapping of electron in La-silicate as well as Hf-based oxides.

Original languageEnglish
Title of host publication2012 Proceedings of the European Solid-State Device Research Conference, ESSDERC 2012
Pages89-92
Number of pages4
DOIs
StatePublished - 2012
Event42nd European Solid-State Device Research Conference, ESSDERC 2012 - Bordeaux, France
Duration: 17 Sep 201221 Sep 2012

Publication series

NameEuropean Solid-State Device Research Conference
ISSN (Print)1930-8876

Conference

Conference42nd European Solid-State Device Research Conference, ESSDERC 2012
CountryFrance
CityBordeaux
Period17/09/1221/09/12

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    Kawanago, T., Kakushima, K., Ahmet, P., Kataoka, Y., Nishiyama, A., Sugii, N., Tsutsui, K., Natori, K., Hattori, T., & Iwai, H. (2012). (100)- and (110)-oriented nMOSFETs with highly scaled EOT in La-silicate/Si interface for multi-gate architecture. In 2012 Proceedings of the European Solid-State Device Research Conference, ESSDERC 2012 (pp. 89-92). [6343340] (European Solid-State Device Research Conference). https://doi.org/10.1109/ESSDERC.2012.6343340