1.0 nm Oxynitride dielectrics prepared by RTP in mixtures of N2 and O2 ambient

Kow-Ming Chang*, Wen Chih Yang, Chu Feng Chen

*Corresponding author for this work

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

This work presents a reliable method of growing aggressively scaled, 1.0 nm thick, gate dielectric in mixtures of N2 and O2 ambient at 900°C for 15 s by rapid thermal processing (RTP). These oxynitride films have excellent interface properties, 100 times lower leakage current density, and better charge trapping properties than rapid thermal oxidation SiO 2 of identical thickness prepared in pure O2 ambient. The effect of interfacial nitrogen concentration on the device characteristics with gate oxynitride films grown in various N2 /O2 gas flow ratios was also investigated. The results demonstrate that the uniform nitrogen content increases with the N2 /O2 gas flow ratio and that high-quality oxynitride films can be obtained by RTP in an optimum gas flow ratio of N2/O2 = 5/1 (slm).

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume7
Issue number6
DOIs
StatePublished - 16 Jun 2004

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