10 GHz GaInP/GaAs HBT injection-locked frequency divider

Hung Ju Wei*, Chin-Chun Meng, Yuwen Chang, Guo Wei Huang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The first Integrated GaInP/GaAs heterojunction bipolar transistor (HBT) Injection-locked frequency divider (ILFD) with the stacked transformers h demonstrated at 9.60-10.38 GHz. The stacked transformers formed by only two metal layers provide the Inductive coupling in the cran feedback and separate biasking for base and collector to allow for the larger voltage swing in the LC tank and increasing locking range. Under the supply voltage of 5 V and core power consumption of 20.5 mW, the locking range In up to 7.8% of the center operating frequency. Compared to other high frequency ILFDs employing a current source as signal injector, the design has a good performance in locking range. The chip size Is 1.0 mm × 1.0 mm.

Original languageEnglish
Title of host publication2007 International Conference on Microwave and Millimeter Wave Technology, ICMMT '07
DOIs
StatePublished - 1 Oct 2007
Event2007 International Conference on Microwave and Millimeter Wave Technology, ICMMT '07 - Guilin, China
Duration: 18 Apr 200721 Apr 2007

Publication series

Name2007 International Conference on Microwave and Millimeter Wave Technology, ICMMT '07

Conference

Conference2007 International Conference on Microwave and Millimeter Wave Technology, ICMMT '07
CountryChina
CityGuilin
Period18/04/0721/04/07

Keywords

  • GaInP/GaAs HBT
  • Injection-loked divider frequency
  • Stacked transformer

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