10-GB/s sige modulator drivers with 4.5 vPP output swing

Day Uei Li*, Chia-Ming Tsai, Li Ren Huang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

This paper presents 10-Gb/s modulator drivers employing novel cascode configuration with double output swing. The cascode drivers in 0.35μm SiGe BiCMOS technology exhibit high output swing of 4.5 Vpp. It is the highest value among reported silicon-based drivers.

Original languageEnglish
Title of host publication2005 IEEE VLSI-TSA International Symposium on VLSI Design, Automation and Test,(VLSI-TSA-DAT)
Pages261-262
Number of pages2
DOIs
StatePublished - 1 Dec 2005
Event2005 IEEE VLSI-TSA International Symposium on VLSI Design, Automation and Test,(VLSI-TSA-DAT) - Hsinchu, Taiwan
Duration: 27 Apr 200529 Apr 2005

Publication series

Name2005 IEEE VLSI-TSA International Symposium on VLSI Design, Automation and Test,(VLSI-TSA-DAT)
Volume2005

Conference

Conference2005 IEEE VLSI-TSA International Symposium on VLSI Design, Automation and Test,(VLSI-TSA-DAT)
CountryTaiwan
CityHsinchu
Period27/04/0529/04/05

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