10 Gbps InGaAs:Sb-GaAs-GaAsP quantum well vertical cavity surface emitting lasers with 1.27 μm emission wavelengths

Ya Hsien Chang, Hao-Chung Kuo*, Yi An Chang, Jung Tang Chu, Min Ying Tsai, Shing Chung Wang

*Corresponding author for this work

Research output: Contribution to journalArticle

Abstract

InGaAs:Sb-GaAs-GaAsP vertical cavity surface emitting lasers (VCSELs) with 1.27 μm emission wavelength were grown by metal-organic chemical vapor deposition (MOCVD) and exhibited excellent performance and temperature stability. The threshold current changes from 1.8 to 1.1 mA and the slope efficiency falls less than ∼35% as the temperature is increased from room temperature to 70°C. With a bias current of only 5 mA, the 3 dB modulation frequency response was measured to be 8.36 GHz, which is appropriate for 10 Gb/s operation. The maximal bandwidth is measured to be 10.7 GHz with a modulation current efficiency factor (MCEF) of ∼5.25 GHz/(mA)1/2. Bit error rates of less than 10-12 are demonstrated for 10 Gb/s data transmission from 25°C to 70°C. We also accumulated life test data up to 1000 h at 70°C/10mA.

Original languageEnglish
Pages (from-to)2556-2559
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume44
Issue number4 B
DOIs
StatePublished - 1 Apr 2005

Keywords

  • Characterization
  • InGaAsSb
  • Laser diodes
  • Metal-organic chemical vapor deposition
  • Optical fiber devices
  • Semiconducting

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