1-V full-swing depletion-load a-In-Ga-Zn-O inverters for back-end-of-line compatible 3D integration

Li Jen Chi, Ming Jiue Yu, Yu Hong Chang, Tuo-Hung Hou*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

To enable monolithic three-dimensional integration of the amorphous In-Ga-Zn-O (a-IGZO) and CMOS technologies, the a-IGZO inverters compatible with the low operating voltage (≤1 V) and process temperature of back-end-of-line CMOS have been investigated. We demonstrated a full-swing depletion-load inverter with a voltage gain up to 24 using a CMOS-compatible operating voltage of 1 V. The drive transistor was realized using a low-voltage enhancement-mode a-IGZO thin-film transistor (TFT) with a steep subthreshold swing of 70 mV/decade and a low threshold voltage of 0.5 V. The load transistor was implemented using a bi-layer a-IGZO channel, where the a-IGZO composition was modulated simply by the oxygen flow rate in a depletion-mode TFT.

Original languageEnglish
Article number7420606
Pages (from-to)441-444
Number of pages4
JournalIEEE Electron Device Letters
Volume37
Issue number4
DOIs
StatePublished - 1 Apr 2016

Keywords

  • Amorphous InGaZnO (a-IGZO)
  • Inverter
  • Monolithic 3D
  • Thin-film transistors (TFTs)

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