0.67 μm2 self-aligned shallow trench isolation cell (SA-STI cell) for 3 V-only 256 Mbit NAND EEPROMs

S. Aritome*, S. Satoh, T. Maruyama, H. Watanabe, S. Shuto, G. J. Hemink, Riichiro Shirota, S. Watanabe, F. Masuoka

*Corresponding author for this work

Research output: Contribution to journalConference article

40 Scopus citations

Abstract

The process technologies and the device performance of the SA-STI cell, which can be used to realize NAND EEPROMs of 256 Mbit and beyond is described. This structure reduces the cell size without scaling of the device dimension. The operation method for the NAND cell was also developed. A bi-polarity Fowler-Nordheim tunneling write/erase method can be used since this method achieves high reliability, high-speed programming and small sector size, which makes it a most promising candidate to replace magnetic disk memory.

Original languageEnglish
Pages (from-to)61-64
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
DOIs
StatePublished - 1 Dec 1994
EventProceedings of the 1994 IEEE International Electron Devices Meeting - San Francisco, CA, USA
Duration: 11 Dec 199414 Dec 1994

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