A silicon bipolar technology for low power analog applications with a 0.5 μm design rule has been developed. A maximum fT value of 24 GHz ( VCE = 2V, IC = 260 μA) is obtained, as well as a 1/32 prescaler free-run frequency of 8.0 GHz ( VCC = 5V, IC = 600 μA).
|Number of pages||4|
|State||Published - 1994|
|Event||Proceedings of the 1994 Bipolar/BiCMOS Circuits and Technology Meeting - Minneapolis, MN, USA|
Duration: 10 Oct 1994 → 11 Oct 1994
|Conference||Proceedings of the 1994 Bipolar/BiCMOS Circuits and Technology Meeting|
|City||Minneapolis, MN, USA|
|Period||10/10/94 → 11/10/94|