0.4V Reconfigurable Near-Threshold TCAM in 28nm High-k Metal-Gate CMOS Process

Yun Sheng Chan, Po-Tsang Huang, Shang Lin Wu, Sheng Chi Lung, Wei Chang Wang, Wei Hwang, Ching Te Chuang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

This paper presents a near-threshold configurable ternary content addressable memory (TCAM) design for energy-constrained neural network or software-defined network (SDN) applications. A TCAM architecture based on foundry-based 6 T SRAM mini-array improves area efficiency and minimizes disturbs to enable operation down to 0.4V, and provides configurable lookup tables for users. To minimize dynamic power consumption, hierarchical precharge structure (HPRE) and don't-care based ripple search-line scheme are utilized for decreasing both the switching activities and wire capacitance. Moreover, power-gating technique, self-timed control and V trip -tracking write-assist are used to reduce standby power, speed-up propagation delays of global signals and improve write-ability at low voltage, respectively. A reconfigurable TCAM is implemented using UMC 28nm high-k metal gate (HKMG) CMOS process. The design achieves operating frequency of 240MHz (20MHz) with energy consumption of 1.146 (0.621) fJ/bit/search at 0.9V (0.4V).

Original languageEnglish
Title of host publicationProceedings - 31st IEEE International System on Chip Conference, SOCC 2018
EditorsRamalingam Sridhar, Massimo Alioto, Mircea Stan, Karan Bhatia, Helen Li
PublisherIEEE Computer Society
Pages67-71
Number of pages5
ISBN (Electronic)9781538614907
DOIs
StatePublished - 17 Jan 2019
Event31st IEEE International System on Chip Conference, SOCC 2018 - Arlington, United States
Duration: 4 Sep 20187 Sep 2018

Publication series

NameInternational System on Chip Conference
Volume2018-September
ISSN (Print)2164-1676
ISSN (Electronic)2164-1706

Conference

Conference31st IEEE International System on Chip Conference, SOCC 2018
CountryUnited States
CityArlington
Period4/09/187/09/18

Keywords

  • SRAM mini array
  • TCAM
  • low-voltage
  • near-threshold

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