0.35-μm asymmetric and symmetric LDD device comparison using a reliability/speed/power methodology

Jone F. Chen*, Jiang Tao, Peng Fang, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

The reliability and performance of NMOSFET asymmetric LDD devices (with no LDD on the source side) are compared with that of conventional LDD devices. The results show that asymmetric LDD devices exhibit higher I dsat and larger I sub. To maintain the same hot-carrier lifetime, asymmetric LDD devices must operate at lower V dd. For the same hot-carrier lifetime, we show that ring oscillators with asymmetric LDD devices can achieve 5% (10% if PMOSFET also had asymmetric LDD) higher speed and 10% lower power.

Original languageEnglish
Pages (from-to)216-218
Number of pages3
JournalIEEE Electron Device Letters
Volume19
Issue number7
DOIs
StatePublished - 1 Jul 1998

Keywords

  • Hot carriers
  • Integrated circuit reliability
  • Semiconductor device reliability

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