0.2V adiabatic NC-FinFET with 0.6mA/μm ION and 0.1nA/μm IOFF

Chen-Ming Hu, Sayeef Salahuddin, Cheng I. Lin, Asif Khan

Research output: Chapter in Book/Report/Conference proceedingConference contribution

42 Scopus citations

Abstract

We present for the first time a Negative Capacitance (NC) FinFET. Simulation shows 0.2V operation with 0.6mA/μm on-current and 100pA/μm leakage current. A simple model guides the optimization of the ferroelectric film and the FinFET in the NC-FinFET. Our finding that a weak ferroelectric material is preferable greatly increases the candidate material classes and we report the target properties to search for. Counterintuitively, the gate to S/D capacitance and a thicker EOT both reduce the required VDD. NC-FinFET is good for high performance and very low power applications.

Original languageEnglish
Title of host publication73rd Annual Device Research Conference, DRC 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages39-40
Number of pages2
ISBN (Electronic)9781467381345
DOIs
StatePublished - 3 Aug 2015
Event73rd Annual Device Research Conference, DRC 2015 - Columbus, United States
Duration: 21 Jun 201524 Jun 2015

Publication series

NameDevice Research Conference - Conference Digest, DRC
Volume2015-August
ISSN (Print)1548-3770

Conference

Conference73rd Annual Device Research Conference, DRC 2015
CountryUnited States
CityColumbus
Period21/06/1524/06/15

Keywords

  • CMOS integrated circuits
  • Capacitance
  • Epitaxial growth
  • Logic gates
  • Metals
  • Transistors

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    Hu, C-M., Salahuddin, S., Lin, C. I., & Khan, A. (2015). 0.2V adiabatic NC-FinFET with 0.6mA/μm ION and 0.1nA/μm IOFF. In 73rd Annual Device Research Conference, DRC 2015 (pp. 39-40). [7175542] (Device Research Conference - Conference Digest, DRC; Vol. 2015-August). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/DRC.2015.7175542