0.25 μm CoSi2 salicide CMOS technology thermally stable up to 1,000 °C with high TDDB reliability

T. Ohguro*, S. Nakamura, E. Morifuji, T. Yoshitomi, T. Morimoto, H. Harakawa, H. S. Momose, Y. Katsumata, H. Iwai

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

6 Scopus citations

Abstract

An emerging trend in semiconductor device manufacturing is the use of CoSi2 salicide technology for 0.25 μm CMOS devices. This methodology offers low sheet and gate resistances, allowing noise figures of less than 1 dB, particularly for analog MOSFETs. Moreover, this technology can produce CMOS devices that exhibit good thermodynamic stability up to 1,000 °C.

Original languageEnglish
Pages (from-to)101-102
Number of pages2
JournalDigest of Technical Papers - Symposium on VLSI Technology
StatePublished - 1997
EventProceedings of the 1997 Symposium on VLSI Technology - Kyoto, Jpn
Duration: 10 Jun 199712 Jun 1997

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