0.15-μm buried-channel p-MOSFET's with ultrathin boron-doped epitaxial Si layer

Tatsuya Ohguro*, Keisaku Yamada, Naoharu Sugiyama, Seiji Imai, Kouji Usuda, Takashi Yoshitomi, Claudio Fiegna, Mizuki Ono, Masanobu Saito, Hisayo Sasaki Momose, Yasuhiro Katsumata, Hiroshi Iwai

*Corresponding author for this work

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Chemical Compounds

Engineering & Materials Science