0.15-μm buried-channel p-MOSFET's with ultrathin boron-doped epitaxial Si layer

Tatsuya Ohguro; Keisaku Yamada; Naoharu Sugiyama; Seiji Imai; Kouji Usuda; Takashi Yoshitomi; Claudio Fiegna; Mizuki Ono; Masanobu Saito; Hisayo Sasaki Momose; Yasuhiro Katsumata; Hiroshi Iwai

doi:10.1109/16.661233

0.15-μm buried-channel p-MOSFET's with ultrathin boron-doped epitaxial Si layer

Tatsuya Ohguro^*, Keisaku Yamada, Naoharu Sugiyama, Seiji Imai, Kouji Usuda, Takashi Yoshitomi, Claudio Fiegna, Mizuki Ono, Masanobu Saito, Hisayo Sasaki Momose, Yasuhiro Katsumata, Hiroshi Iwai

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

We demonstrated silicon MOSFET's with a counterdoped ultrathin epitaxial channel grown by low-temperature UHV-CVD; this allows the channel region to be doped with boron with high precision. The boron concentration and epitaxial layer thickness can be chosen independently, and so it is easy to adjust the threshold voltage of the buried-channel p-MOSFET's with ntype polysilicon gates. It was confirmed that choosing an ultrathin epitaxial layer at 10 nm leads to suppression of the short-channel effects in buried-channel p-MOSFET's with gate length down to 0.15 μm, while maintaining an appropriate value of threshold voltage.

Original language	English
Pages (from-to)	717-721
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	45
Issue number	3
DOIs	https://doi.org/10.1109/16.661233
State	Published - 1998

Keywords

Boron-doped epitaxial Si
Buried channel type
P-MOSFET

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Ohguro, Tatsuya ; Yamada, Keisaku ; Sugiyama, Naoharu ; Imai, Seiji ; Usuda, Kouji ; Yoshitomi, Takashi ; Fiegna, Claudio ; Ono, Mizuki ; Saito, Masanobu ; Momose, Hisayo Sasaki ; Katsumata, Yasuhiro ; Iwai, Hiroshi. / 0.15-μm buried-channel p-MOSFET's with ultrathin boron-doped epitaxial Si layer. In: IEEE Transactions on Electron Devices. 1998 ; Vol. 45, No. 3. pp. 717-721.

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abstract = "We demonstrated silicon MOSFET's with a counterdoped ultrathin epitaxial channel grown by low-temperature UHV-CVD; this allows the channel region to be doped with boron with high precision. The boron concentration and epitaxial layer thickness can be chosen independently, and so it is easy to adjust the threshold voltage of the buried-channel p-MOSFET's with ntype polysilicon gates. It was confirmed that choosing an ultrathin epitaxial layer at 10 nm leads to suppression of the short-channel effects in buried-channel p-MOSFET's with gate length down to 0.15 μm, while maintaining an appropriate value of threshold voltage.",

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0.15-μm buried-channel p-MOSFET's with ultrathin boron-doped epitaxial Si layer. / Ohguro, Tatsuya; Yamada, Keisaku; Sugiyama, Naoharu; Imai, Seiji; Usuda, Kouji; Yoshitomi, Takashi; Fiegna, Claudio; Ono, Mizuki; Saito, Masanobu; Momose, Hisayo Sasaki; Katsumata, Yasuhiro; Iwai, Hiroshi.

In: IEEE Transactions on Electron Devices, Vol. 45, No. 3, 1998, p. 717-721.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - 0.15-μm buried-channel p-MOSFET's with ultrathin boron-doped epitaxial Si layer

AU - Ohguro, Tatsuya

AU - Yamada, Keisaku

AU - Sugiyama, Naoharu

AU - Imai, Seiji

AU - Usuda, Kouji

AU - Yoshitomi, Takashi

AU - Fiegna, Claudio

AU - Ono, Mizuki

AU - Saito, Masanobu

AU - Momose, Hisayo Sasaki

AU - Katsumata, Yasuhiro

AU - Iwai, Hiroshi

PY - 1998

Y1 - 1998

N2 - We demonstrated silicon MOSFET's with a counterdoped ultrathin epitaxial channel grown by low-temperature UHV-CVD; this allows the channel region to be doped with boron with high precision. The boron concentration and epitaxial layer thickness can be chosen independently, and so it is easy to adjust the threshold voltage of the buried-channel p-MOSFET's with ntype polysilicon gates. It was confirmed that choosing an ultrathin epitaxial layer at 10 nm leads to suppression of the short-channel effects in buried-channel p-MOSFET's with gate length down to 0.15 μm, while maintaining an appropriate value of threshold voltage.

AB - We demonstrated silicon MOSFET's with a counterdoped ultrathin epitaxial channel grown by low-temperature UHV-CVD; this allows the channel region to be doped with boron with high precision. The boron concentration and epitaxial layer thickness can be chosen independently, and so it is easy to adjust the threshold voltage of the buried-channel p-MOSFET's with ntype polysilicon gates. It was confirmed that choosing an ultrathin epitaxial layer at 10 nm leads to suppression of the short-channel effects in buried-channel p-MOSFET's with gate length down to 0.15 μm, while maintaining an appropriate value of threshold voltage.

KW - Boron-doped epitaxial Si

KW - Buried channel type

KW - P-MOSFET

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JF - Ieee Transactions On Electron Devices

SN - 0018-9383

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ER -

0.15-μm buried-channel p-MOSFET's with ultrathin boron-doped epitaxial Si layer

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