0.15μm delta-doped CMOS with on-field source/drain contacts

K. Imai*, Chen-Ming Hu, T. Andoh, Y. Kinoshita, Y. Matsubara, T. Tatsumi, T. Yamazaki

*Corresponding author for this work

Research output: Contribution to journalConference article

Abstract

A delta-doped CMOS with on-field source/drain contacts is developed. After BF2 and As ion implantation for NMOS and PMOS regions, non-doped selective epitaxial channel layer is grown by UHV-CVD, and polysilicon S/D electrodes deposited on the field are connected with the epitaxial channel layer simultaneously. This structure can reduce the source/drain parasitic junction capacitance similar to that of SOI CMOS. The inverter speed of the delta-doped CMOS with on-field source/drain contacts are 30% faster than that of the conventional CMOS.

Original languageEnglish
Pages (from-to)172-173
Number of pages2
JournalDigest of Technical Papers - Symposium on VLSI Technology
StatePublished - 1 Jan 1996
EventProceedings of the 1996 Symposium on VLSI Technology - Honolulu, HI, USA
Duration: 11 Jun 199613 Jun 1996

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