0.13-μm low-κ-Cu CMOS logic-based technology for 2.1-Gb high data rate read-channel

Jyh-Chyurn Guo*, W. Y. Lien, T. L. Tsai, S. M. Chen, C. M. Wu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

High-performance analog/digital elements have been successfully fabricated bya 0.13-μm low-κ-Cu logic-based mixed-signal CMOS process in a single chip to enable a 2.1-Gb/s read-channel for hard disk drives that is a record-high data rate supported by fully CMOS solution. The high-performance analog devices demonstrate superior drivability, matching, noise immunity, and reliability by a unique dual-gate oxide module to support the aggressive oxide thickness scaling and maintain promisingly good reliability in all aspects.

Original languageEnglish
Pages (from-to)757-763
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume51
Issue number5
DOIs
StatePublished - 1 May 2004

Keywords

  • Dual-gate oxide
  • High-performance analog (HPA)
  • Read-channel

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