0.13μm low voltage logic based RF CMOS technology with 115GHz f T and 80GHz fMAX

J. C. Guo, C. H. Huang, K. T. Chan, W. Y. Lien, C. M. Wu, Y. C. Sun

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Scopus citations

Abstract

Superior RF CMOS of 115 fT and 80GHz fMAXhas been realized by 0.13/spl mu/m low voltage logic based RF CMOS technology by aggressive device scaling and optimized layout. NF/sub min/ of 2.2 dB at 10GHz is achieved even without deep N-well and ground-shielded signal pad. P/sub 1dB/ of near 10dBm can fit Bluetooth requirement and 55% PAE at 2.4GHz address the good potential of sub-100nm CMOS for low voltage RF power applications.

Original languageEnglish
Title of host publicationConference Proceedings - 33rd European Microwave Conference, EuMC 2003
PublisherIEEE Computer Society
Pages683-686
Number of pages4
ISBN (Print)1580538355, 9781580538350
DOIs
StatePublished - 1 Jan 2003
Event33rd European Microwave Conference, EuMC 2003 - Munich, Germany
Duration: 7 Oct 20037 Oct 2003

Publication series

NameConference Proceedings - 33rd European Microwave Conference, EuMC 2003
Volume2

Conference

Conference33rd European Microwave Conference, EuMC 2003
CountryGermany
CityMunich
Period7/10/037/10/03

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