0.0354mm2 82μW 125KS/s 3-axis readout circuit for capacitive MEMS accelerometer

Kelvin Yi Tse Lai, Zih Cheng He, Yu Tao Yang, Hsie-Chia Chang, Chen-Yi Lee

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

6 Scopus citations

Abstract

In this paper, we propose a power/area-efficient capacitive readout circuit for the Micro-Electro-Mechanical Systems (MEMS) sensor of 3-axis accelerometer. The proposed architecture is different from other traditional structures by exploiting true capacitive-to-digital converter (CDC) without Analog-to-Digital Converter (ADC). The proposed CDC can differentiate the bidirectional 125KS/s 80-level accelerations between ±8g and support the 4-level adjustable resolutions of 0.1g/0.2g/0.4g/0.8g for each axis. The proposed readout circuit with 0.0354mm2 area is fabricated in UMC 0.18um CMOS-MEMS process. Experimental results show power consumption is 50uW with 1.8V supply voltage for 1-axis (FOM=3.84pJ), 82uW for 3-axis (FOM=2.1pJ) under 125KHz of sampling frequency and 0.1g acceleration sensitivity for 0.2fF MEMS capacitance change.

Original languageEnglish
Title of host publicationProceedings of the 2013 IEEE Asian Solid-State Circuits Conference, A-SSCC 2013
Pages109-112
Number of pages4
DOIs
StatePublished - 1 Dec 2013
Event2013 9th IEEE Asian Solid-State Circuits Conference, A-SSCC 2013 - Singapore, Singapore
Duration: 11 Nov 201313 Nov 2013

Publication series

NameProceedings of the 2013 IEEE Asian Solid-State Circuits Conference, A-SSCC 2013

Conference

Conference2013 9th IEEE Asian Solid-State Circuits Conference, A-SSCC 2013
CountrySingapore
CitySingapore
Period11/11/1313/11/13

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