| Original language | Chinese (Traditional) |
|---|---|
| Patent number | I379021 |
| State | Published - 11 Dec 2012 |
Cite this
Chang, C-Y. (2012). 於矽基板上形成三族氮化物半導體磊晶層的方法. (Patent No. I379021).
於矽基板上形成三族氮化物半導體磊晶層的方法
Chun-Yen Chang (Inventor)
Research output: Patent