於矽基板上形成三族氮化物半導體磊晶層的方法

Chun-Yen Chang (Inventor)

Research output: Patent

Original languageChinese (Traditional)
Patent numberI379021
StatePublished - 11 Dec 2012

Cite this

Chang, C-Y. (2012). 於矽基板上形成三族氮化物半導體磊晶層的方法. (Patent No. I379021).