具陣列式奈米孔洞之氧化鋁薄膜的製造方法

Chuen-Guang Chao (Inventor)

Research output: Patent

Original languageChinese (Traditional)
Patent numberI285225
StatePublished - 11 Aug 2007

Cite this

Chao, C-G. (2007). 具陣列式奈米孔洞之氧化鋁薄膜的製造方法. (Patent No. I285225).