| Original language | Chinese (Traditional) |
|---|---|
| Patent number | I260716 |
| State | Published - 21 Aug 2006 |
Cite this
Chang, C-Y., & Chang, E. Y. (2006). 具有防止源汲極區摻雜離子在接面區外擴散的電晶體結構及其製作方法. (Patent No. I260716).
具有防止源汲極區摻雜離子在接面區外擴散的電晶體結構及其製作方法
Chun-Yen Chang (Inventor), Edward Yi Chang (Inventor)
Research output: Patent