1988 …2018

Research output per year

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Personal profile

Research Interests

Semiconductor Physics and Devices, Optoelectronics Near-field Emission Microscopy, Nanostructures.

Experience

1990-1998 Associate Professor, Department of Electrophysics, National Chiao Tung University 

1998-present Professor, Department of Electrophysics, National Chiao Tung University 

Education/Academic qualification

PhD, State University of New York at Buffalo

External positions

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Projects

Studies of Physical Properties of High in Content InGaN Quantum Structure Grown by MOCVD

Chen, W.

1/08/1331/07/14

Project: Government MinistryMinistry of Science and Technology

Development of Advanced Epitaxial Techniques for Long-Wavelength Nitride-Based Light Emitting

Chen, W.

1/06/1331/08/14

Project: Government MinistryMinistry of Science and Technology

Studies of Physical Properties of High in Content InGaN Quantum Structure Grown by MOCVD

Chen, W.

1/08/1231/07/13

Project: Government MinistryMinistry of Science and Technology

Research Output

化學氣相沈積裝置

Chen, W-K., 1 Apr 2018, Patent No. I619840

Research output: Patent

Incorporation behaviors of in and ga in the two-heater MOVPE growth of inGaN films

Fu, S. F., Cheng, C. H., Lee, F. W., Chen, S. Y., Liao, B. W., Chou, W-C., Chen, W-K. & Ke, W. C., 1 Jan 2016, In : ECS Journal of Solid State Science and Technology. 5, 6, p. P335-P339

Research output: Contribution to journalArticle

Open Access
  • Influence of different aspect ratios on the structural and electrical properties of GaN thin films grown on nanoscale-patterned sapphire substrates

    Lee, F. W., Ke, W. C., Cheng, C. H., Liao, B. W. & Chen, W-K., 1 Jul 2016, In : Applied Surface Science. 375, p. 223-229 7 p.

    Research output: Contribution to journalArticle

  • 13 Scopus citations

    InGaN-Based Light-Emitting Diodes Grown on a Micro/Nanoscale Hybrid Patterned Sapphire Substrate

    Ke, W. C., Lee, F. W., Chiang, C. Y., Liang, Z. Y., Chen, W-K. & Seong, T. Y., 21 Dec 2016, In : ACS Applied Materials and Interfaces. 8, 50, p. 34520-34529 10 p.

    Research output: Contribution to journalArticle

  • 10 Scopus citations

    Trap-assisted tunneling in aluminum-doped ZnO/indium oxynitride nanodot interlayer Ohmic contacts on p-GaN

    Ke, W. C., Lee, F. W., Yang, C. Y., Chen, W-K. & Huang, H. P., 21 Oct 2015, In : Journal of Applied Physics. 118, 15, 155303.

    Research output: Contribution to journalArticle

  • 4 Scopus citations