1990 …2022

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2002

A domain partition approach to parallel adaptive simulation of dynamic threshold voltage MOSFET

Li, Y-M., Chao, T. S. & Sze, S. M., 1 Aug 2002, In : Computer Physics Communications. 147, 1-2, p. 697-701 5 p.

Research output: Contribution to journalArticle

15 Scopus citations

A practical implementation of parallel dynamic load balancing for adaptive computing in VLSI device simulation

Li, Y-M., Sze, S. M. & Chao, T. S., 17 Sep 2002, In : Engineering with Computers. 18, 2, p. 124-137 14 p.

Research output: Contribution to journalArticle

96 Scopus citations

Characterization of thin ZrO2 films deposited using Zr(Oi-Pr)2(thd)2 and O2 on Si(100)

Chen, H. W., Landheer, D., Wu, X., Moisa, S., Sproule, G. I., Chao, T-S. & Huang, T. Y., 1 May 2002, In : Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films. 20, 3, p. 1145-1148 4 p.

Research output: Contribution to journalArticle

12 Scopus citations

Effect of CF 4 plasma pretreatment on low temperature oxides

Chang, T. Y., Chen, H. W., Lei, T. F. & Chao, T-S., 1 Dec 2002, In : IEEE Transactions on Electron Devices. 49, 12, p. 2163-2170 8 p.

Research output: Contribution to journalArticle

2 Scopus citations

Impact of nitrogen and/or fluorine implantation on deep-submicron Co-salicide process

Chang, T. Y., Lei, T. F., Chao, T-S., Chen, S. W., Kao, L. M., Chen, S. K., Tuan, A. & Su, T. P., 1 Aug 2002, In : Solid-State Electronics. 46, 8, p. 1097-1101 5 p.

Research output: Contribution to journalArticle

Impacts of gate structure on dynamic threshold SOI nMOSFETs

Lo, W. C., Chang, S. J., Chang, C. Y. & Chao, T-S., 1 Aug 2002, In : IEEE Electron Device Letters. 23, 8, p. 497-499 3 p.

Research output: Contribution to journalArticle

17 Scopus citations

Improvement of low-temperature gate dielectric formed in N 2 O plasma by an additional CF 4 pretreatment process

Chang, T. Y., Lei, T. F., Chao, T-S., Wen, H. C. & Chen, H. W., 1 Jul 2002, In : IEEE Electron Device Letters. 23, 7, p. 389-391 3 p.

Research output: Contribution to journalArticle

5 Scopus citations

Nitrogen implantation and in situ HF vapor clean for deep submicrometer n-MOSFETs

Chen, J. H., Lei, T. F., Chen, C. L., Chao, T-S., Wen, Y. & Chen, K. T., 1 Jan 2002, In : Journal of the Electrochemical Society. 149, 1

Research output: Contribution to journalArticle

6 Scopus citations

Numerical simulation of quantum effects in high-k gate dielectric MOS structures using quantum mechanical models

Li, Y-M., Lee, J. W., Tang, T. W., Chao, T. S., Lei, T. F. & Sze, S. M., 1 Aug 2002, In : Computer Physics Communications. 147, 1-2, p. 214-217 4 p.

Research output: Contribution to journalArticle

18 Scopus citations

Performance evaluation of cleaning solutions enhanced with tetraalkylammonium hydroxide substituents for post-CMP cleaning on poly-Si film

Pan, T. M., Lei, T. F., Ko, F-H., Chao, T-S., Liaw, M. C., Lee, Y. H. & Lud, C. P., 1 Jun 2002, In : Journal of the Electrochemical Society. 149, 6

Research output: Contribution to journalArticle

9 Scopus citations
3 Scopus citations

Physical and electrical characterization of ZrO2 gate insulators deposited on Si(100) using Zr(Oi-Pr)2(thd)2 and O2

Chen, H. W., Huang, T. Y., Landheer, D., Wu, X., Moisa, S., Sproule, G. I. & Chao, T-S., 1 Jun 2002, In : Journal of the Electrochemical Society. 149, 6

Research output: Contribution to journalArticle

21 Scopus citations

Reduction of nickel-silicided junction leakage by nitrogen ion implantation

Chao, T-S. & Lee, L. Y., 1 Feb 2002, In : Japanese Journal of Applied Physics, Part 2: Letters. 41, 2 A

Research output: Contribution to journalArticle

9 Scopus citations

Ultra-shallow junction formation using implantation through capping nitride layer on source/drain extension

Hsien, L. J., Chan, Y. L., Chao, T-S., Jiang, Y. L. & Kung, C. Y., 1 Jul 2002, In : Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 41, 7 A, p. 4519-4520 2 p.

Research output: Contribution to journalArticle

2001

Characterized of ultrathin oxynitride (18-21 Å) gate dielectrics by NH 3 nitridation and N 2O RTA treatment

Pan, T. M., Lei, T. F., Wen, H. C. & Chao, T-S., 1 May 2001, In : IEEE Transactions on Electron Devices. 48, 5, p. 907-912 6 p.

Research output: Contribution to journalArticle

14 Scopus citations

Comparison of novel cleaning solutions with various chelating agents for post-CMP cleaning on poly-Si film

Pan, T. M., Lei, T. F., Ko, F-H., Chao, T-S., Chiu, T. H., Lee, Y. H. & Lu, C. P., 1 Nov 2001, In : IEEE Transactions on Semiconductor Manufacturing. 14, 4, p. 365-371 7 p.

Research output: Contribution to journalArticle

11 Scopus citations

Comparison of ultrathin CoTiO3 and NiTiO3 high-k gate dielectrics

Pan, T. M., Lei, T. F. & Chao, T-S., 15 Mar 2001, In : Journal of Applied Physics. 89, 6, p. 3447-3452 6 p.

Research output: Contribution to journalArticle

23 Scopus citations

Comprehensive study on a novel bidirectional tunneling program/erase NOR-type (BiNOR) 3-D flash memory cell

Chou, A. H. F., Yang, E. C. S., Liu, C. J., Pong, H. H., Liaw, M. C., Chao, T-S., King, Y. C., Hwang, H. L. & Hsu, C. C. H., 1 Jul 2001, In : IEEE Transactions on Electron Devices. 48, 7, p. 1386-1393 8 p.

Research output: Contribution to journalArticle

3 Scopus citations

Electrical characteristics of thin cerium oxide film on silicon substrate by reactive DC sputtering

Pan, T. M., Chien, C-H., Lei, T. F., Chao, T-S. & Huang, T. Y., 1 Sep 2001, In : Electrochemical and Solid-State Letters. 4, 9

Research output: Contribution to journalArticle

9 Scopus citations

Electrical properties of shallow p+-n junction using boron-doped Si1-xGex layer deposited by ultrahigh vacuum chemical molecular epitaxy

Huang, H. J., Chen, K. M., Chang, C. Y., Chao, T-S. & Huang, T. Y., 1 May 2001, In : Journal of Applied Physics. 89, 9, p. 5133-5137 5 p.

Research output: Contribution to journalArticle

3 Scopus citations

High-k cobalt-titanium oxide dielectrics formed by oxidation of sputtered Co/Ti or Ti/Co films

Pan, T. M., Lei, T. F. & Chao, T-S., 5 Mar 2001, In : Applied Physics Letters. 78, 10, p. 1439-1441 3 p.

Research output: Contribution to journalArticle

16 Scopus citations

High quality interpoly dielectrics deposited on the nitrided-polysilicon for nonvolatile memory devices

Yang, W. L., Chao, T-S., Cheng, C. M., Pan, T. M. & Lei, T. F., 1 Jul 2001, In : IEEE Transactions on Electron Devices. 48, 7, p. 1304-1309 6 p.

Research output: Contribution to journalArticle

9 Scopus citations

High quality interpoly-oxynitride grown by NH3 nitridation and N2O RTA treatment

Pan, T. M., Lei, T. F., Yang, W. L., Cheng, C. M. & Chao, T-S., 1 Feb 2001, In : IEEE Electron Device Letters. 22, 2, p. 68-70 3 p.

Research output: Contribution to journalArticle

8 Scopus citations

Improved low temperature characteristics of p-channel MOSFETs with Si 1-xGe x raised source and drain

Huang, H. J., Chen, K. M., Huang, T. Y., Chao, T-S., Huang, G. W., Chien, C-H. & Chang, C. Y., 1 Aug 2001, In : IEEE Transactions on Electron Devices. 48, 8, p. 1627-1632 6 p.

Research output: Contribution to journalArticle

7 Scopus citations

Nano-oxidation of silicon nitride films with an atomic force microscope: Chemical mapping, kinetics, and applications

Chien, F. S. S., Chou, Y. C., Chen, T. T., Hsieh, W. F., Chao, T-S. & Gwo, S., 15 Feb 2001, In : Journal of Applied Physics. 89, 4, p. 2465-2472 8 p.

Research output: Contribution to journalArticle

55 Scopus citations

New insights into breakdown modes and their evolution in ultra-thin gate oxide

Lin, H-C., Lee, D. Y., Lee, C. Y., Chao, T-S., Huang, T. Y. & Wang, T-H., 1 Jan 2001, In : International Symposium on VLSI Technology, Systems, and Applications, Proceedings. p. 37-40 4 p.

Research output: Contribution to journalArticle

9 Scopus citations

One-Step Cleaning Solution to Replace the Conventional RCA Two-Step Cleaning Recipe for Pregate Oxide Cleaning

Pan, T. M., Lei, T. F., Chao, T-S., Liaw, M. C., Ko, F-H. & Lu, C. P., 1 Jun 2001, In : Journal of the Electrochemical Society. 148, 6

Research output: Contribution to journalArticle

24 Scopus citations

The effects of super-steep-retrograde indium channel profile on deep submicron n-channel metal-oxide-semiconductor field-effect transistor

Chen, C., Chang, S. J., Chou, J. W., Lin, T., Yeh, W. K., Chang, C. Y., Luo, W. Z., Lee, Y. J., Chao, T-S. & Huang, T. Y., 1 Jan 2001, In : Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 40, 1, p. 75-79 5 p.

Research output: Contribution to journalArticle

X-Ray Photoelectron Spectroscopy of Gate-Quality Silicon Oxynitride Films Produced by Annealing Plasma-Nitrided Si(100) in Nitrous Oxide

Chen, H. W., Landheer, D., Chao, T-S., Hulse, J. E. & Huang, T. Y., 1 Jul 2001, In : Journal of the Electrochemical Society. 148, 7

Research output: Contribution to journalArticle

16 Scopus citations
2000

Anomalous crossover in Vth roll-off for indium-doped nMOSFETs

Chang, S. J., Chang, C. Y., Chen, C., Chou, J. W., Chao, T-S. & Huang, T. Y., Sep 2000, In : IEEE Electron Device Letters. 21, 9, p. 457-459 3 p.

Research output: Contribution to journalArticle

5 Scopus citations

Characteristics of polysilicon oxides combining N 2O nitridation and CMP processes

Lei, T. F., Chen, J. H., Wang, M. F. & Chao, T-S., 1 Aug 2000, In : IEEE Transactions on Electron Devices. 47, 8, p. 1545-1552 8 p.

Research output: Contribution to journalArticle

1 Scopus citations

Characteristics of TEOS polysilicon oxides: Improvement by CMP and high temperature RTA N2/N2O annealing

Chen, J. H., Lei, T. F., Chen, J. H. & Chao, T-S., 1 Nov 2000, In : Journal of the Electrochemical Society. 147, 11, p. 4282-4288 7 p.

Research output: Contribution to journalArticle

9 Scopus citations

High performance 0.1 μm dynamic threshold MOSFET using indium channel implantation

Chang, S. J., Chang, C. Y., Chao, T-S. & Huang, T. Y., 1 Mar 2000, In : IEEE Electron Device Letters. 21, 3, p. 127-129 3 p.

Research output: Contribution to journalArticle

13 Scopus citations

High-performance and high-reliability 80-nm gate-length DTMOS with indium super steep retrograde channel

Chang, S. J., Chang, C. Y., Chen, C., Chao, T-S., Lee, Y. J. & Huang, T. Y., 1 Dec 2000, In : IEEE Transactions on Electron Devices. 47, 12, p. 2379-2384 6 p.

Research output: Contribution to journalArticle

16 Scopus citations

High performance deep-submicron n-MOSFETs by nitrogen implantation and in-situ HF vapor clean

Chen, J. H., Lei, T. F., Chen, C. L., Chao, T-S., Wen, W. Y. & Chen, K. T., 1 Jan 2000, In : Annual Proceedings - Reliability Physics (Symposium). p. 180-185 6 p.

Research output: Contribution to journalArticle

2 Scopus citations

High-quality native-oxide-free ultra-thin oxide grown by in-situ HF-vapour treatment

Chen, C. L., Chao, T-S., Lai, C. S. & Huang, T. Y., 25 May 2000, In : Electronics Letters. 36, 11, p. 981-983 3 p.

Research output: Contribution to journalArticle

2 Scopus citations

High quality ultrathin CoTiO3 high-k gate dielectrics

Pan, T. M., Lei, T. F., Chao, T-S., Chang, K. L. & Hsieh, K. C., 1 Sep 2000, In : Electrochemical and Solid-State Letters. 3, 9, p. 433-434 2 p.

Research output: Contribution to journalArticle

12 Scopus citations

Improvement of polysilicon oxide integrity using NF3-annealing

Yang, W. L., Shieh, M. S., Chen, Y. M., Chao, T-S., Liu, D. G. & Lei, T. F., 15 Jun 2000, In : Japanese Journal of Applied Physics, Part 2: Letters. 39, 6 B, p. L562-L563

Research output: Contribution to journalArticle

4 Scopus citations

Low contact resistance of poly-plug structure by in-situ HF-vapour cleaning

Chen, J. H., Lei, T. F., Chao, T-S., Su, T. P., Huang, J., Tuan, A. & Chen, S. K., 13 Apr 2000, In : Electronics Letters. 36, 8, p. 756-757 2 p.

Research output: Contribution to journalArticle

3 Scopus citations

Nanometer-scale conversion of Si3N4 to SiOx

Chien, F. S. S., Chang, J. W., Lin, S. W., Chou, Y. C., Chen, T. T., Gwo, S., Chao, T-S. & Hsieh, W. F., 17 Jan 2000, In : Applied Physics Letters. 76, 3, p. 360-362 3 p.

Research output: Contribution to journalArticle

81 Scopus citations

Novel cleaning solutions for polysilicon film post chemical mechanical polishing

Pan, T. M., Lei, T. F., Chen, C. C., Chao, T-S., Liaw, M. C., Yang, W. L., Tsai, M. S., Lu, C. P. & Chang, W. H., 1 Jul 2000, In : IEEE Electron Device Letters. 21, 7, p. 338-340 3 p.

Research output: Contribution to journalArticle

21 Scopus citations

Novel sacrificial gate stack process for suppression of boron penetration in p-MOSFET with shallow BF2-implanted source/drain extension

Chang, S. J., Chang, C. Y., Chao, T-S., Zhong, S. Z., Yeh, W. K. & Huang, T. Y., 1 Aug 2000, In : IEEE Electron Device Letters. 21, 8, p. 381-383 3 p.

Research output: Contribution to journalArticle

3 Scopus citations

Optimum conditions for novel one-step cleaning method for pre-gate oxide cleaning using robust design methodology

Pan, T. M., Lei, T. F., Chao, T-S., Liaw, M. C. & Lu, C. P., 1 Oct 2000, In : Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 39, 10, p. 5805-5808 4 p.

Research output: Contribution to journalArticle

2 Scopus citations

Plasma-induced charging damage in ultrathin (3-nm) gate oxides

Chen, C. C., Lin, H-C., Chang, C. Y., Liang, M. S., Chien, C-H., Hsien, S. K., Huang, T. Y. & Chao, T-S., 1 Jul 2000, In : IEEE Transactions on Electron Devices. 47, 7, p. 1355-1360 6 p.

Research output: Contribution to journalArticle

18 Scopus citations

Plasma-process-induced damage in sputtered TiN metal-gate capacitors with ultrathin nitrided oxides

Chen, C. C., Lin, H-C., Chang, C. Y., Chao, T-S., Huang, T. Y. & Liang, M. S., 1 Aug 2000, In : Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 39, 8, p. 4733-4737 5 p.

Research output: Contribution to journalArticle

7 Scopus citations

Reduced Reverse Narrow Channel Effect in Thin SOI nMOSFETs

Chang, C. Y., Chang, S. J., Chao, T-S., Wu, S. D. & Huang, T. Y., 1 Sep 2000, In : IEEE Electron Device Letters. 21, 9, p. 460-462 3 p.

Research output: Contribution to journalArticle

9 Scopus citations

Robust ultrathin oxynitride dielectrics by NH3 nitridation and N2O RTA treatment

Pan, T. M., Lei, T. F. & Chao, T-S., 1 Aug 2000, In : IEEE Electron Device Letters. 21, 8, p. 378-380 3 p.

Research output: Contribution to journalArticle

18 Scopus citations
1999

A comprehensive study of hot carrier stress-induced drain leakage current degradation in thin-oxide n-MOSFET's

Wang, T-H., Chiang, L. P., Zous, N. K., Hsu, C. F., Huang, L. Y. & Chao, T-S., 1 Dec 1999, In : IEEE Transactions on Electron Devices. 46, 9, p. 1877-1882 6 p.

Research output: Contribution to journalArticle

37 Scopus citations

A novel Si-B diffusion source for p+-poly-Si gate

Chao, T-S., Kuo, C. P., Chen, T. P. & Lei, T. F., 1 Jan 1999, In : Journal of the Electrochemical Society. 146, 10, p. 3852-3855 4 p.

Research output: Contribution to journalArticle