1990 …2022

Research output per year

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Research Output

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Article
2008

Performance and interface characterization for contact etch stop layer-strained nMOSFET with HfO2 gate dielectrics under pulsed-IV measurement

Wu, W. C., Chao, T-S., Chiu, T. H., Wang, J. C., Lai, C. S., Ma, M. W. & Lo, W. C., 23 Jun 2008, In : Electrochemical and Solid-State Letters. 11, 8

Research output: Contribution to journalArticle

3 Scopus citations

Positive bias temperature instability (PBTI) characteristics of contact-etch-stop-layer-induced local-tensile-strained HfO2 nMOSFET

Wu, W. C., Chao, T-S., Chiu, T. H., Wang, J. C., Lai, C. S., Ma, M. W. & Lo, W. C., 8 Dec 2008, In : IEEE Electron Device Letters. 29, 12, p. 1340-1343 4 p.

Research output: Contribution to journalArticle

14 Scopus citations

Reliability mechanisms of LTPS-TFT with HfO 2 gate dielectric: PBTI, NBTI, and hot-carrier stress

Ma, M. W., Chen, C. Y., Wu, W. C., Su, C. J., Kao, K. H., Chao, T-S. & Lei, T. F., 1 May 2008, In : IEEE Transactions on Electron Devices. 55, 5, p. 1153-1160 8 p.

Research output: Contribution to journalArticle

35 Scopus citations

SONOS memories with embedded silicon nanocrystals in nitride

Liu, M-C., Chiang, T. Y., Kuo, P. Y., Chou, M. H., Wu, Y. H., You, H. C., Cheng, C. H., Liu, S. H., Yang, W. L., Lei, T. F. & Chao, T-S., 1 Jul 2008, In : Semiconductor Science and Technology. 23, 7, 075033.

Research output: Contribution to journalArticle

7 Scopus citations

X-ray photoelectron spectroscopy energy band alignment of spin-on CoTiO3 high- k dielectric prepared by sol-gel spin coating method

Kao, K. H., Chuang, S. H., Wu, W. C., Chao, T-S., Chen, J. H., Ma, M. W., Gao, R. H. & Chiang, M. Y., 15 Sep 2008, In : Applied Physics Letters. 93, 9, 092907.

Research output: Contribution to journalArticle

3 Scopus citations
2007

Characteristics of self-aligned Si/Ge T-gate poly-si thin-film transistors with high on/off current ratio

Kuo, P. Y., Chao, T-S., Hsieh, P. S. & Lei, T. F., 1 May 2007, In : IEEE Transactions on Electron Devices. 54, 5, p. 1171-1176 6 p.

Research output: Contribution to journalArticle

10 Scopus citations

Highly Reliable Multilevel and 2-bit/cell Operation of Wrapped Select Gate (WSG) SONOS Memory

Wu, W. C., Chao, T-S., Peng, W. C., Yang, W. L., Wang, J. C., Chen, J. H., Lai, C. S., Yang, T. Y., Lee, C. H., Hsieh, T. M. & Liou, J. C., 7 Mar 2007, In : IEEE Electron Device Letters. 28, 3, p. 214-216 3 p.

Research output: Contribution to journalArticle

14 Scopus citations

High-performance HfO2 gate dielectrics fluorinated by postdeposition CF4 plasma treatment

Wu, W. C., Lai, C. S., Wang, J. C., Chen, J. H., Ma, M. W. & Chao, T-S., 11 Jun 2007, In : Journal of the Electrochemical Society. 154, 7

Research output: Contribution to journalArticle

31 Scopus citations

Impact of channel dangling bonds on reliability characteristics of Flash memory on poly-Si thin films

Lin, Y. H., Chien, C-H., Chou, T. H., Chao, T-S. & Lei, T. F., 1 Apr 2007, In : IEEE Electron Device Letters. 28, 4, p. 267-269 3 p.

Research output: Contribution to journalArticle

8 Scopus citations

Impact of High-K Offset Spacer in 65-nm Node SOI Devices

Ma, M. W., Lei, T. F., Wu, C. H., Wang, S. J., Yang, T. Y., Kao, K. H., Wu, W. C. & Chao, T-S., 7 Mar 2007, In : IEEE Electron Device Letters. 28, 3, p. 238-241 4 p.

Research output: Contribution to journalArticle

24 Scopus citations

Low-temperature polycrystalline silicon thin-film flash memory with hafnium silicate

Lin, Y. H., Chien, C-H., Chou, T. H., Chao, T-S. & Lei, T. F., 1 Mar 2007, In : IEEE Transactions on Electron Devices. 54, 3, p. 531-536 6 p.

Research output: Contribution to journalArticle

27 Scopus citations

Nonvolatile memory characteristics with embedded hemispherical silicon nanocrystals

Chen, J. H., Lei, T. F., Landheer, D., Wu, X., Ma, M. W., Wu, W. C., Yang, T. Y. & Chao, T-S., 9 Oct 2007, In : Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 46, 10 A, p. 6586-6588 3 p.

Research output: Contribution to journalArticle

12 Scopus citations

Performance improvement of CoTiO3 high-k dielectrics with nitrogen incorporation

Chen, J. H., Huang, T. B., Wu, X., Landheer, D., Lei, T. F. & Chao, T-S., 1 Jan 2007, In : Journal of the Electrochemical Society. 154, 1

Research output: Contribution to journalArticle

4 Scopus citations
3 Scopus citations

Si nanocrystal memory devices self-assembled by in situ rapid thermal annealing of ultrathin a -Si on SiO2

Chen, J. H., Lei, T. F., Landheer, D., Wu, X., Liu, J. & Chao, T-S., 17 Aug 2007, In : Electrochemical and Solid-State Letters. 10, 10

Research output: Contribution to journalArticle

14 Scopus citations
2 Scopus citations
2006

A carbon nanotube field effect transistor with tunable conduction-type by electrostatic effects

Chen, B. H., Wei, J. H., Lo, P. Y., Wang, H. H., Lai, M. J., Tsai, M. J., Chao, T-S., Lin, H-C. & Huang, T. Y., 1 Jul 2006, In : Solid-State Electronics. 50, 7-8, p. 1341-1348 8 p.

Research output: Contribution to journalArticle

11 Scopus citations
7 Scopus citations

Complementary carbon nanotube-gated carbon nanotube thin-film transistor

Chen, B. H., Lin, H-C., Huang, T. Y., Wei, J. H., Wang, H. H., Tsai, M. J. & Chao, T-S., 27 Feb 2006, In : Applied Physics Letters. 88, 9, 093502.

Research output: Contribution to journalArticle

18 Scopus citations

Fringing electric field effect on 65-nm-node fully depleted silicon-on-insulator devices

Ma, M. W., Chao, T-S., Kao, K. H., Huang, J. S. & Lei, T. F., 7 Sep 2006, In : Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 45, 9 A, p. 6854-6859 6 p.

Research output: Contribution to journalArticle

3 Scopus citations

High-performance poly-Si TFTs with fully Ni-self-aligned silicided S/D and gate structure

Kuo, P. Y., Chao, T-S., Wang, R. J. & Lei, T. F., 1 Apr 2006, In : IEEE Electron Device Letters. 27, 4, p. 258-261 4 p.

Research output: Contribution to journalArticle

2 Scopus citations

High-κ material sidewall with source/drain-to-gate non-overlapped structure for low standby power applications

Ma, M. W., Chao, T-S., Kao, K. H., Huang, J. S. & Lei, T. F., 15 Nov 2006, In : Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 45, 11, p. 8656-8658 3 p.

Research output: Contribution to journalArticle

Improving electrical characteristics of High-k NiTiO dielectric with nitrogen ion implantation

Yang, W. L., Chao, T-S., Chen, S. C., Yang, C. H. & Peng, W. C., 7 Sep 2006, In : Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 45, 9 A, p. 6902-6904 3 p.

Research output: Contribution to journalArticle

2 Scopus citations

Novel method of converting metallic-type carbon nanotubes to semiconducting-type carbon nanotube field-effect transistors

Chen, B. H., Wet, J. H., Lo, P. Y., Pei, Z. W., Chao, T-S., Lin, H-C. & Huang, T. Y., 25 Apr 2006, In : Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 45, 4 B, p. 3680-3685 6 p.

Research output: Contribution to journalArticle

14 Scopus citations

Prospect of cobalt-mix-tetraethoxysilane method on localized lateral growth of carbon nanotubes for both p- and n-type field effect transistors

Chen, B. H., Lin, H-C., Huang, T. Y., Wei, J. H., Hwang, C. L., Lo, P. Y., Tsai, M. J. & Chao, T-S., 9 Oct 2006, In : Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 24, 5, p. 2282-2290 9 p.

Research output: Contribution to journalArticle

8 Scopus citations

Suppression of interfacial reaction for HfO2 on silicon by pre-CF4 plasma treatment

Lai, C. S., Wu, W. C., Chao, T-S., Chen, J. H., Wang, J. C., Tay, L. L. & Rowell, N., 25 Aug 2006, In : Applied Physics Letters. 89, 7, 072904.

Research output: Contribution to journalArticle

35 Scopus citations

The impact of deep Ni salicidation and NH3 plasma treatment on nano-SOI FinFETs

You, H. C., Kuo, P. Y., Ko, F-H., Chao, T-S. & Lei, T. F., 1 Dec 2006, In : IEEE Electron Device Letters. 27, 10, p. 799-801 3 p.

Research output: Contribution to journalArticle

9 Scopus citations
2005

Characterization of C F4 -plasma fluorinated Hf O2 gate dielectrics with TaN metal gate

Lai, C. S., Wu, W. C., Wang, J. C. & Chao, T-S., 4 Jul 2005, In : Applied Physics Letters. 86, 22, p. 1-3 3 p., 222905.

Research output: Contribution to journalArticle

34 Scopus citations

Effects of metallic contaminants on the electrical characteristics of ultrathin gate oxides

Pan, T. M., Ko, F-H., Chao, T-S., Chen, C. C. & Chang-Liao, K. S., 14 Sep 2005, In : Electrochemical and Solid-State Letters. 8, 8

Research output: Contribution to journalArticle

15 Scopus citations

High voltage applications and NBTI effects of DT-pMOSFETS with reverse Schottky substrate contacts

Lee, Y. J., Chao, T-S. & Huang, T. Y., 1 Jul 2005, In : Microelectronics Reliability. 45, 7-8, p. 1119-1123 5 p.

Research output: Contribution to journalArticle

Localized lateral growth of single-walled carbon nanotubes for field-effect transistors by a cobalt-mix-TEOS method

Chen, B. H., Lo, P. Y., Wei, J. H., Tsai, M. J., Hwang, C. L., Chao, T-S., Lin, H-C. & Huang, T. Y., 7 Oct 2005, In : Electrochemical and Solid-State Letters. 8, 10

Research output: Contribution to journalArticle

5 Scopus citations

Mobility enhancement in local strain channel nMOSFETs by stacked a-Si/poly-Si gate and capping nitride

Lu, T. Y. & Chao, T-S., 1 Apr 2005, In : IEEE Electron Device Letters. 26, 4, p. 267-269 3 p.

Research output: Contribution to journalArticle

16 Scopus citations
2004

CoTiO3 high-κ dielectrics on HSG for DRAM applications

Chao, T-S., Ku, W. M., Lin, H. C., Landheer, D., Wang, Y. Y. & Mori, Y., 1 Dec 2004, In : IEEE Transactions on Electron Devices. 51, 12, p. 2200-2204 5 p.

Research output: Contribution to journalArticle

16 Scopus citations

High-Voltage and High-Temperature Applications of DTMOS With Reverse Schottky Barrier on Substrate Contacts

Chao, T-S., Lee, Y. J. & Huang, T. Y., 1 Feb 2004, In : IEEE Electron Device Letters. 25, 2, p. 86-88 3 p.

Research output: Contribution to journalArticle

2 Scopus citations

Mobility enhancement of MOSFETs on p-silicon (111) with in situ HF-vapor pre-gate oxide cleaning

Chao, T-S., Lin, Y. H. & Yang, W. L., 1 Sep 2004, In : IEEE Electron Device Letters. 25, 9, p. 625-627 3 p.

Research output: Contribution to journalArticle

3 Scopus citations

Novel one-step aqueous solutions to replace pregate oxide cleans

Pan, T. M., Lei, T. F., Ko, F-H., Chao, T-S., Chiu, T. H. & Lu, C. P., 1 Aug 2004, In : IEEE Transactions on Semiconductor Manufacturing. 17, 3, p. 470-476 7 p.

Research output: Contribution to journalArticle

4 Scopus citations

Spatially-resolved EELS and EDS analysis of HfOxNy gate dielectrics deposited by MOCVD using [(C2H5) 2N]4Hf with NO and O2

Wu, X., Couillard, M., Lee, M. S., Chen, J. H., Botton, G. A., Landheer, D., Lu, Z. H., Ng, W. T. & Chao, T-S., 24 Sep 2004, In : Microscopy and Microanalysis. 10, SUPPL. 2, p. 606-607 2 p.

Research output: Contribution to journalArticle

1 Scopus citations
12 Scopus citations
2003

A novel parallel approach for quantum effect simulation in semiconductor devices

Li, Y-M., Chao, T. S. & Sze, S. M., 1 Jan 2003, In : International Journal of Modelling and Simulation. 23, 2, p. 94-102 9 p.

Research output: Contribution to journalArticle

11 Scopus citations

A One-Step Single-Cleaning Solution for CMOS Processes

Chao, T-S., Yeh, C. H., Pan, T. M., Lei, T. F. & Li, Y. H., 1 Sep 2003, In : Journal of the Electrochemical Society. 150, 9

Research output: Contribution to journalArticle

6 Scopus citations
1 Scopus citations

Structure and thermal stability of MOCVD ZrO2 films on Si (1 0 0)

Wu, X., Landheer, D., Graham, M. J., Chen, H. W., Huang, T. Y. & Chao, T-S., 1 Apr 2003, In : Journal of Crystal Growth. 250, 3-4, p. 479-485 7 p.

Research output: Contribution to journalArticle

26 Scopus citations
4 Scopus citations

Ultrathin zirconium silicate films deposited on Si(100) using Zr(Oi-Pr)2(thd)2, Si(Ot-Bu)2(thd)2, and nitric oxide

Chen, H. W., Huang, T. Y., Landheer, D., Wu, X., Moisa, S., Sproule, G. I., Kim, J. K., Lennard, W. N. & Chao, T-S., 1 Jul 2003, In : Journal of the Electrochemical Society. 150, 7

Research output: Contribution to journalArticle

8 Scopus citations