1990 …2022

Research output per year

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2012

Novel 2-bit/cell wrapped-select-gate SONOS TFT memory using source-side injection for NOR-type flash array

Wang, K. T., Hsueh, F. C., Lu, Y. L., Chiang, T. Y., Wu, Y. H., Liao, C. C., Yen, L. C. & Chao, T-S., 10 May 2012, In : IEEE Electron Device Letters. 33, 6, p. 839-841 3 p., 6194261.

Research output: Contribution to journalArticle

1 Scopus citations

Oxide thinning and structure scaling down effect of low-temperature poly-si thin-film transistors

Ma, W. C. Y., Chiang, T. Y., Lin, J. W. & Chao, T-S., 1 Jan 2012, In : IEEE/OSA Journal of Display Technology. 8, 1, p. 12-17 6 p., 6030887.

Research output: Contribution to journalArticle

4 Scopus citations

Polycrystalline silicon thin-film transistor with nickel-titanium oxide by sol-gel spin-coating and nitrogen implantation

Wu, S. C., Hou, T-H., Chuang, S. H., Chou, H. C., Chao, T-S. & Lei, T. F., 1 Dec 2012, In : Solid-State Electronics. 78, p. 11-16 6 p.

Research output: Contribution to journalArticle

Reliability analysis of symmetric vertical-channel nickel-salicided poly-Si thin-film transistors

Wu, Y. H., Lin, J. W., Lu, Y. H., Kuo, R. H., Yen, L. C., Chen, Y. H., Liao, C. C., Kuo, P. Y. & Chao, T-S., 19 Jun 2012, In : IEEE Transactions on Electron Devices. 59, 8, p. 2160-2166 7 p., 6215029.

Research output: Contribution to journalArticle

1 Scopus citations
8 Scopus citations
3 Scopus citations

Susceptor coupling for the uniformity and dopant activation efficiency in implanted Si under fixed-frequency microwave anneal

Lee, Y. J., Hsueh, F. K., Current, M. I., Wu, C. Y. & Chao, T-S., 1 Feb 2012, In : IEEE Electron Device Letters. 33, 2, p. 248-250 3 p., 6105514.

Research output: Contribution to journalArticle

9 Scopus citations

Temperature dependence of electron mobility on strained nMOSFETs fabricated by strain-gate engineering

Chang, T. S., Lu, T. Y. & Chao, T-S., 8 May 2012, In : IEEE Electron Device Letters. 33, 7, p. 931-933 3 p., 6193407.

Research output: Contribution to journalArticle

5 Scopus citations
2011

Amorphous-layer regrowth and activation of P and as implanted Si by low-temperature microwave annealing

Hsueh, F. K., Lee, Y. J., Lin, K. L., Current, M. I., Wu, C. Y. & Chao, T-S., 1 Jul 2011, In : IEEE Transactions on Electron Devices. 58, 7, p. 2088-2093 6 p., 5746514.

Research output: Contribution to journalArticle

18 Scopus citations

Channel film thickness effect of low-temperature polycrystalline-silicon thin-film transistors

Ma, W. C. Y., Chiang, T. Y., Yeh, C. R., Chao, T-S. & Lei, T. F., 1 Apr 2011, In : IEEE Transactions on Electron Devices. 58, 4, p. 1268-1272 5 p., 5723733.

Research output: Contribution to journalArticle

8 Scopus citations

Characterization of enhanced stress memorization technique on nMOSFETs by multiple strain-gate engineering

Lu, T. Y., Chang, T. S., Huang, S. A. & Chao, T-S., 1 Apr 2011, In : IEEE Transactions on Electron Devices. 58, 4, p. 1023-1028 6 p., 5723734.

Research output: Contribution to journalArticle

4 Scopus citations

Effects of channel width and nitride passivation layer on electrical characteristics of polysilicon thin-film transistors

Liao, C. C., Lin, M. C., Chiang, T. Y. & Chao, T-S., 1 Nov 2011, In : IEEE Transactions on Electron Devices. 58, 11, p. 3812-3819 8 p., 6029290.

Research output: Contribution to journalArticle

6 Scopus citations

Fabrication and characterization of high-k dielectric nickel titanate thin films using a modified sol-gel method

Chuang, S. H., Hsieh, M. L., Wu, S. C., Lin, H. C., Chao, T-S. & Hou, T-H., 1 Jan 2011, In : Journal of the American Ceramic Society. 94, 1, p. 250-254 5 p.

Research output: Contribution to journalArticle

28 Scopus citations
2 Scopus citations

Gate-all-around junctionless transistors with heavily doped polysilicon nanowire channels

Su, C. J., Tsai, T. I., Liou, Y. L., Lin, Z. M., Lin, H-C. & Chao, T-S., 1 Apr 2011, In : IEEE Electron Device Letters. 32, 4, p. 521-523 3 p., 5716662.

Research output: Contribution to journalArticle

150 Scopus citations

High-performance poly-Si TFTs of top-gate with high-κ metal-gate combine the laser annealed channel and glass substrate

Lu, Y. H., Chien, C-H., Kuo, P. Y., Yang, M. J., Lin, H. Y. & Chao, T-S., 24 Jan 2011, In : Electrochemical and Solid-State Letters. 14, 1

Research output: Contribution to journalArticle

High tensile stress with minimal dopant diffusion by low temperature microwave anneal

Lee, Y. J., Lu, Y. L., Mu, Z. C., Hsueh, F. K., Chao, T-S. & Wu, C. Y., 16 Mar 2011, In : Electrochemical and Solid-State Letters. 14, 5

Research output: Contribution to journalArticle

1 Scopus citations

Impact of strain layer on gate leakage and interface-state for nMOSFETs fabricated by stress-memorization technique

Liao, C. C., Lin, M. C., Chiang, T. Y. & Chao, T-S., 24 Jan 2011, In : Electrochemical and Solid-State Letters. 14, 1

Research output: Contribution to journalArticle

Novel Sub-10-nm Gate-all-around Si nanowire channel Poly-Si TFTs with raised source/drain

Lu, Y. H., Kuo, P. Y., Wu, Y. H., Chen, Y. H. & Chao, T-S., 1 Feb 2011, In : IEEE Electron Device Letters. 32, 2, p. 173-175 3 p., 5671463.

Research output: Contribution to journalArticle

19 Scopus citations

Symmetric vertical-channel nickel-salicided poly-Si thin-film transistors with self-aligned oxide overetching structures

Wu, Y. H., Kuo, P. Y., Lu, Y. H., Chen, Y. H., Chiang, T. Y., Wang, K. T., Yen, L. C. & Chao, T-S., 1 Jul 2011, In : IEEE Transactions on Electron Devices. 58, 7, p. 2008-2013 6 p., 5765490.

Research output: Contribution to journalArticle

4 Scopus citations
2010

A novel p-n-diode structure of SONOS-type TFT NVM with embedded silicon nanocrystals

Chiang, T. Y., Ma, W. C. Y., Wu, Y. H., Wang, K. T. & Chao, T-S., 1 Nov 2010, In : IEEE Electron Device Letters. 31, 11, p. 1239-1241 3 p., 5565385.

Research output: Contribution to journalArticle

6 Scopus citations

A simple method for sub-100 nm pattern generation with I-line double-patterning technique

Tsai, T. I., Lin, H-C., Jian, M. F., Huang, T. Y. & Chao, T-S., 1 May 2010, In : Microelectronics Reliability. 50, 5, p. 584-588 5 p.

Research output: Contribution to journalArticle

Benefit of NMOS by compressive SiN as stress memorization technique and its mechanism

Liao, C. C., Chiang, T. Y., Lin, M. C. & Chao, T-S., 1 Apr 2010, In : IEEE Electron Device Letters. 31, 4, p. 281-283 3 p., 11.

Research output: Contribution to journalArticle

10 Scopus citations

Characteristics of SONOS-Ttpe flash memory with in situ embedded silicon nanocrystals

Chiang, T. Y., Wu, Y. H., Ma, W. C. Y., Kuo, P. Y., Wang, K. T., Liao, C. C., Yeh, C. R., Yang, W. L. & Chao, T-S., 1 Aug 2010, In : IEEE Transactions on Electron Devices. 57, 8, p. 1895-1902 8 p., 5497125.

Research output: Contribution to journalArticle

10 Scopus citations

Formation and structural characterization of cobalt titanate thin films

Chuang, S. H., Gao, R. H., Gao, K. H., Chiang, M. Y. & Chao, T-S., 1 Jan 2010, In : Journal of the Chinese Chemical Society. 57, 5 A, p. 1022-1026 5 p.

Research output: Contribution to journalArticle

5 Scopus citations

High-reliability dynamic-threshold source-side injection for 2-bit/cell with MLC operation of wrapped select-gate SONOS in NOR-type flash memory

Wang, K. T., Chao, T-S., Wu, W. C., Yang, W. L., Lee, C. H., Hsieh, T. M., Liou, J. C., Wang, S. D., Chen, T. P., Chen, C. H., Lin, C. H. & Chen, H. H., 1 Sep 2010, In : IEEE Transactions on Electron Devices. 57, 9, p. 2335-2338 4 p., 5510121.

Research output: Contribution to journalArticle

3 Scopus citations

Nanoscale p-MOS thin-film transistor with TiN gate electrode fabricated by low-temperature microwave dopant activation

Lu, Y. L., Hsueh, F. K., Huang, K. C., Cheng, T. Y., Kowalski, J. M., Kowalski, J. E., Lee, Y. J., Chao, T-S. & Wu, C. Y., 1 May 2010, In : IEEE Electron Device Letters. 31, 5, p. 437-439 3 p., 5427093.

Research output: Contribution to journalArticle

13 Scopus citations

Novel symmetric vertical-channel ni-salicided poly-si thin-film transistors with high on/off-current ratio

Wu, Y. H., Kuo, P. Y., Lu, Y. H., Chen, Y. H. & Chao, T-S., 1 Nov 2010, In : IEEE Electron Device Letters. 31, 11, p. 1233-1235 3 p., 5559329.

Research output: Contribution to journalArticle

4 Scopus citations

The characteristics of n- and p-channel poly-si thin-film transistors with fully Ni-salicided S/D and gate structure

Kuo, P. Y., Huang, Y. S., Lue, Y. H., Chao, T-S. & Lei, T. F., 1 Jan 2010, In : Journal of the Electrochemical Society. 157, 1

Research output: Contribution to journalArticle

3 Scopus citations

The zero-temperature-coefficient point modeling of DTMOS in CMOS Integration

Wang, K. T., Lin, W. C. & Chao, T-S., 1 Oct 2010, In : IEEE Electron Device Letters. 31, 10, p. 1071-1073 3 p., 5540257.

Research output: Contribution to journalArticle

5 Scopus citations
2009

Electrical characteristics of high performance spc and milc p-channel ltps-tft with high- κ gate dielectric

Ma, M. W., Chiang, T. Y., Yeh, C. R., Chao, T-S. & Lei, T. F., 24 Aug 2009, In : Electrochemical and Solid-State Letters. 12, 10

Research output: Contribution to journalArticle

7 Scopus citations

High-performance p-channel LTPS-TFT using HfO2 gate dielectric and nitrogen ion implantation

Ma, M. W., Chiang, T. Y., Chao, T-S. & Lei, T. F., 21 Aug 2009, In : Semiconductor Science and Technology. 24, 7, 072001.

Research output: Contribution to journalArticle

8 Scopus citations

High-speed multilevel wrapped-select-gate SONOS memory using a novel dynamic

Wang, K. T., Chao, T-S., Wu, W. C., Chiang, T. Y., Wu, Y. H., Yang, W. L., Lee, C. H., Hsieh, T. M., Liou, J. C., Wang, S. D., Chen, T. P., Chen, C. H., Lin, C. H. & Chen, H. H., 30 Apr 2009, In : IEEE Electron Device Letters. 30, 6, p. 659-661 3 p.

Research output: Contribution to journalArticle

2 Scopus citations

MILC-TFT with high-κ dielectrics for one-time-programmable memory application

Chiang, T. Y., Ma, M. W., Wu, Y. H., Kuo, P. Y., Wang, K. T., Liao, C. C., Yeh, C. R. & Chao, T-S., 7 Aug 2009, In : IEEE Electron Device Letters. 30, 9, p. 954-956 3 p.

Research output: Contribution to journalArticle

6 Scopus citations
1 Scopus citations

Physical mechanism of high-programming-efficiency dynamic-threshold source-side injection in wrapped-select-gate SONOS for nor-type flash memory

Wang, K. T., Chao, T-S., Chiang, T. Y., Wu, W. C., Kuo, P. Y., Wu, Y. H., Lu, Y. L., Liao, C. C., Yang, W. L., Lee, C. H., Hsieh, T. M., Liou, J. C., Wang, S. D., Chen, T. P., Chen, C. H., Lin, C. H. & Chen, H. H., 6 Nov 2009, In : IEEE Electron Device Letters. 30, 11, p. 1206-1208 3 p.

Research output: Contribution to journalArticle

1 Scopus citations

Poly-Si thin-film transistor nonvolatile memory using Ge nanocrystals as a charge trapping layer deposited by the low-pressure chemical vapor deposition

Kuo, P. Y., Chao, T-S., Huang, J. S. & Lei, T. F., 12 Feb 2009, In : IEEE Electron Device Letters. 30, 3, p. 234-236 3 p.

Research output: Contribution to journalArticle

6 Scopus citations

Vertical n-channel poly-Si thin-film transistors with symmetric S/D fabricated by Ni-silicide-induced lateral-crystallization technology

Kuo, P. Y., Chao, T-S., Lai, J. T. & Lei, T. F., 12 Feb 2009, In : IEEE Electron Device Letters. 30, 3, p. 237-239 3 p.

Research output: Contribution to journalArticle

4 Scopus citations
2008

Carrier transportation mechanism of the TaN/HfO2/IL/Si structure with silicon surface fluorine implantation

Wu, W. C., Lai, C. S., Wang, T. M., Wang, J. C., Hsu, C. W., Ma, M. W., Lo, W. C. & Chao, T-S., 1 Jul 2008, In : IEEE Transactions on Electron Devices. 55, 7, p. 1639-1646 8 p.

Research output: Contribution to journalArticle

24 Scopus citations

Characteristics of HfO 2 /Poly-Si interfacial layer on CMOS LTPS-TFTs with HfO 2 gate dielectric and O 2 plasma surface treatment

Ma, M. W., Chiang, T. Y., Wu, W. C., Chao, T-S. & Lei, T. F., 10 Dec 2008, In : IEEE Transactions on Electron Devices. 55, 12, p. 3489-3493 5 p.

Research output: Contribution to journalArticle

14 Scopus citations

Characteristics of PBTI and hot carrier stress for LTPS-TFT with high-κ gate dielectric

Ma, M. W., Chen, C. Y., Su, C. J., Wu, W. C., Wu, Y. H., Kao, K. H., Chao, T-S. & Lei, T. F., 1 Feb 2008, In : IEEE Electron Device Letters. 29, 2, p. 171-173 3 p.

Research output: Contribution to journalArticle

15 Scopus citations

Current transport mechanism for HfO 2 gate dielectrics with fluorine incorporation

Wu, W. C., Lai, C. S., Wang, T. M., Wang, J. C., Hsu, C. W., Ma, M. W. & Chao, T-S., 1 Jan 2008, In : Electrochemical and Solid-State Letters. 11, 1

Research output: Contribution to journalArticle

8 Scopus citations

Enhancement of stress-memorization technique on nMOSFETs by multiple strain-gate Engineering

Lu, T. Y., Wang, C. M. & Chao, T-S., 19 Nov 2008, In : Electrochemical and Solid-State Letters. 12, 1

Research output: Contribution to journalArticle

6 Scopus citations

High-performance metal-induced laterally crystallized polycrystalline silicon p-channel thin-film transistor with TaN/HfO 2 gate stack structure

Ma, M. W., Chao, T-S., Su, C. J., Wu, W. C., Kao, K. H. & Lei, T. F., 1 Jun 2008, In : IEEE Electron Device Letters. 29, 6, p. 592-594 3 p.

Research output: Contribution to journalArticle

3 Scopus citations

High-program/erase-speed SONOS with in situ silicon nanocrystals

Chiang, T. Y., Chao, T-S., Wu Yi-Hong, Y. H. & Yang, W. L., 11 Sep 2008, In : IEEE Electron Device Letters. 29, 10, p. 1148-1151 4 p.

Research output: Contribution to journalArticle

22 Scopus citations

Impacts of a buffer layer and hydrogen-annealed wafers on the performance of strained-channel nMOSFETs with SiN-capping layer

Tsai, T. I., Lin, H-C., Lee, Y. J., Chen, K. S., Wang, J., Hsueh, F. K., Chao, T-S. & Huang, T. Y., 1 Oct 2008, In : Solid-State Electronics. 52, 10, p. 1518-1524 7 p.

Research output: Contribution to journalArticle

1 Scopus citations

Impacts of fluorine ion implantation with low-temperature solid-phase crystallized activation on high-κ LTPS-TFT

Ma, M. W., Chen, C. Y., Su, C. J., Wu, W. C., Wu, Y. H., Yang, T. Y., Kao, K. H., Chao, T-S. & Lei, T. F., 1 Feb 2008, In : IEEE Electron Device Letters. 29, 2, p. 168-170 3 p.

Research output: Contribution to journalArticle

6 Scopus citations

Impacts of N 2 and NH 3 plasma surface treatments on high-performance LTPS-TFT with high-κ gate dielectric

Ma, M. W., Chao, T-S., Chiang, T. Y., Wu, W. C. & Lei, T. F., 18 Sep 2008, In : IEEE Electron Device Letters. 29, 11, p. 1236-1238 3 p.

Research output: Contribution to journalArticle

9 Scopus citations

Improvement on performance and reliability of TaN/HfO2 LTPS-TFTs with fluorine implantation

Ma, M. W., Chen, C. Y., Su, C. J., Wu, W. C., Yang, T. Y., Kao, K. H., Chao, T-S. & Lei, T. F., 1 Mar 2008, In : Solid-State Electronics. 52, 3, p. 342-347 6 p.

Research output: Contribution to journalArticle

2 Scopus citations

Optimized ONO thickness for multi-level and 2-bit/cell operation for wrapped-select-gate (WSG) SONOS memory

Wu, W. C., Chao, T-S., Peng, W. C., Yang, W. L., Chen, J. H., Ma, M. W., Lai, C. S., Yang, T. Y., Lee, C. H., Hsieh, T. M., Liou, J. C., Chen, T. P., Chen, C. H., Lin, C. H., Chen, H. H. & Ko, J., 1 Jan 2008, In : Semiconductor Science and Technology. 23, 1, 015004.

Research output: Contribution to journalArticle

4 Scopus citations