1990 …2022

Research output per year

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Article

A carbon nanotube field effect transistor with tunable conduction-type by electrostatic effects

Chen, B. H., Wei, J. H., Lo, P. Y., Wang, H. H., Lai, M. J., Tsai, M. J., Chao, T-S., Lin, H-C. & Huang, T. Y., 1 Jul 2006, In : Solid-State Electronics. 50, 7-8, p. 1341-1348 8 p.

Research output: Contribution to journalArticle

11 Scopus citations

A comprehensive study of hot carrier stress-induced drain leakage current degradation in thin-oxide n-MOSFET's

Wang, T-H., Chiang, L. P., Zous, N. K., Hsu, C. F., Huang, L. Y. & Chao, T-S., 1 Dec 1999, In : IEEE Transactions on Electron Devices. 46, 9, p. 1877-1882 6 p.

Research output: Contribution to journalArticle

37 Scopus citations

A domain partition approach to parallel adaptive simulation of dynamic threshold voltage MOSFET

Li, Y-M., Chao, T. S. & Sze, S. M., 1 Aug 2002, In : Computer Physics Communications. 147, 1-2, p. 697-701 5 p.

Research output: Contribution to journalArticle

15 Scopus citations

Advanced Cu chemical displacement technique for SiO2-based electrochemical metallization ReRAM application

Chin, F. T., Lin, Y. H., You, H. C., Yang, W. L., Lin, L. M., Hsiao, Y. P., Ko, C. M. & Chao, T-S., 1 Jan 2014, In : Nanoscale Research Letters. 9, 1

Research output: Contribution to journalArticle

Open Access
9 Scopus citations

Al-SiO2-Y2O3-SiO2-poly-si thin-film transistor nonvolatile memory incorporating a Y2O 3 charge trapping layer

Pan, T. M., Yen, L. C., Mondal, S., Lo, C. T. & Chao, T-S., 26 Jul 2013, In : ECS Solid State Letters. 2, 10

Research output: Contribution to journalArticle

2 Scopus citations

Amorphous-layer regrowth and activation of P and as implanted Si by low-temperature microwave annealing

Hsueh, F. K., Lee, Y. J., Lin, K. L., Current, M. I., Wu, C. Y. & Chao, T-S., 1 Jul 2011, In : IEEE Transactions on Electron Devices. 58, 7, p. 2088-2093 6 p., 5746514.

Research output: Contribution to journalArticle

18 Scopus citations

An Exothermic Phenomenon of Silicon Oxidation by N2O

Chao, T-S., Chen, W. H., Sun, S. C. & Chang, H. Y., 1 Jan 1993, In : Journal of the Electrochemical Society. 140, 11, p. L160-L161

Research output: Contribution to journalArticle

Open Access
4 Scopus citations

Anomalous crossover in Vth roll-off for indium-doped nMOSFETs

Chang, S. J., Chang, C. Y., Chen, C., Chou, J. W., Chao, T-S. & Huang, T. Y., Sep 2000, In : IEEE Electron Device Letters. 21, 9, p. 457-459 3 p.

Research output: Contribution to journalArticle

5 Scopus citations

A novel ion-bombarded and plasma-passivated charge storage layer for SONOS-type nonvolatile memory

Liu, S. H., Yang, W. L., Wu, C. C. & Chao, T-S., 29 Aug 2012, In : IEEE Electron Device Letters. 33, 10, p. 1393-1395 3 p., 6280616.

Research output: Contribution to journalArticle

9 Scopus citations

A novel parallel approach for quantum effect simulation in semiconductor devices

Li, Y-M., Chao, T. S. & Sze, S. M., 1 Jan 2003, In : International Journal of Modelling and Simulation. 23, 2, p. 94-102 9 p.

Research output: Contribution to journalArticle

11 Scopus citations

A novel planarization of oxide-filled shallow-trench isolation

Cheng, J. Y., Lei, T. F., Chao, T-S., Yen, D. L. W., Jin, B. J. & Lin, C. J., 1 Jan 1997, In : Journal of the Electrochemical Society. 144, 1, p. 315-320 6 p.

Research output: Contribution to journalArticle

11 Scopus citations

A novel p-n-diode structure of SONOS-type TFT NVM with embedded silicon nanocrystals

Chiang, T. Y., Ma, W. C. Y., Wu, Y. H., Wang, K. T. & Chao, T-S., 1 Nov 2010, In : IEEE Electron Device Letters. 31, 11, p. 1239-1241 3 p., 5565385.

Research output: Contribution to journalArticle

6 Scopus citations

A novel self-aligned T-shaped gate process for deep submicron Si MOSFET's fabrication

Lin, H-C., Lin, R., Wu, W. F., Yang, R. P., Tsai, M. S., Chao, T-S. & Huang, T. Y., 1 Jan 1998, In : IEEE Electron Device Letters. 19, 1, p. 26-28 3 p.

Research output: Contribution to journalArticle

7 Scopus citations

A novel shallow trench isolation technique

Cheng, J. Y., Lei, T. F. & Chao, T-S., 1 Mar 1997, In : Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 36, 3 SUPPL. B, p. 1319-1324 6 p.

Research output: Contribution to journalArticle

13 Scopus citations

A novel Si-B diffusion source for p+-poly-Si gate

Chao, T-S., Kuo, C. P., Chen, T. P. & Lei, T. F., 1 Jan 1999, In : Journal of the Electrochemical Society. 146, 10, p. 3852-3855 4 p.

Research output: Contribution to journalArticle

A One-Step Single-Cleaning Solution for CMOS Processes

Chao, T-S., Yeh, C. H., Pan, T. M., Lei, T. F. & Li, Y. H., 1 Sep 2003, In : Journal of the Electrochemical Society. 150, 9

Research output: Contribution to journalArticle

6 Scopus citations

A practical implementation of parallel dynamic load balancing for adaptive computing in VLSI device simulation

Li, Y-M., Sze, S. M. & Chao, T. S., 17 Sep 2002, In : Engineering with Computers. 18, 2, p. 124-137 14 p.

Research output: Contribution to journalArticle

96 Scopus citations

A simple method for sub-100 nm pattern generation with I-line double-patterning technique

Tsai, T. I., Lin, H-C., Jian, M. F., Huang, T. Y. & Chao, T-S., 1 May 2010, In : Microelectronics Reliability. 50, 5, p. 584-588 5 p.

Research output: Contribution to journalArticle

A study of interface trap generation by fowler-nordheim and substrate-hot-carrier stresses for 4-nm thick gate oxides

Shiue, J. H., Lee, J. Y. M. & Chao, T-S., 1 Dec 1999, In : IEEE Transactions on Electron Devices. 46, 8, p. 1705-1710 6 p.

Research output: Contribution to journalArticle

25 Scopus citations

A study of the interfacial layer of Al and Al(1% Si)Si contacts using a zero-layer ellipsometry model

Chao, T-S., Lee, C. L. & Lei, T. F., 1 Jan 1992, In : Solid State Electronics. 35, 11, p. 1579-1584 6 p.

Research output: Contribution to journalArticle

A study on the radiation hardness of flash cell with horn-shaped floating-gate

Huang, T. Y., Jong, F. C., Chao, T-S., Lin, H-C., Leu, L. Y., Young, K., Lin, C. H. & Chiu, K. Y., 1 Sep 1997, In : Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 36, 9 A, p. 5459-5463 5 p.

Research output: Contribution to journalArticle

Benefit of NMOS by compressive SiN as stress memorization technique and its mechanism

Liao, C. C., Chiang, T. Y., Lin, M. C. & Chao, T-S., 1 Apr 2010, In : IEEE Electron Device Letters. 31, 4, p. 281-283 3 p., 11.

Research output: Contribution to journalArticle

10 Scopus citations

Carrier transportation mechanism of the TaN/HfO2/IL/Si structure with silicon surface fluorine implantation

Wu, W. C., Lai, C. S., Wang, T. M., Wang, J. C., Hsu, C. W., Ma, M. W., Lo, W. C. & Chao, T-S., 1 Jul 2008, In : IEEE Transactions on Electron Devices. 55, 7, p. 1639-1646 8 p.

Research output: Contribution to journalArticle

24 Scopus citations

Channel film thickness effect of low-temperature polycrystalline-silicon thin-film transistors

Ma, W. C. Y., Chiang, T. Y., Yeh, C. R., Chao, T-S. & Lei, T. F., 1 Apr 2011, In : IEEE Transactions on Electron Devices. 58, 4, p. 1268-1272 5 p., 5723733.

Research output: Contribution to journalArticle

8 Scopus citations

Channel thickness effect on high-frequency performance of poly-Si thin-film transistors

Chen, K. M., Tsai, T. I., Lin, T. Y., Lin, H-C., Chao, T-S., Huang, G. W. & Huang, T. Y., 12 Jul 2013, In : IEEE Electron Device Letters. 34, 8, p. 1020-1022 3 p., 6553156.

Research output: Contribution to journalArticle

10 Scopus citations
7 Scopus citations

Characteristics of HfO 2 /Poly-Si interfacial layer on CMOS LTPS-TFTs with HfO 2 gate dielectric and O 2 plasma surface treatment

Ma, M. W., Chiang, T. Y., Wu, W. C., Chao, T-S. & Lei, T. F., 10 Dec 2008, In : IEEE Transactions on Electron Devices. 55, 12, p. 3489-3493 5 p.

Research output: Contribution to journalArticle

14 Scopus citations

Characteristics of PBTI and hot carrier stress for LTPS-TFT with high-κ gate dielectric

Ma, M. W., Chen, C. Y., Su, C. J., Wu, W. C., Wu, Y. H., Kao, K. H., Chao, T-S. & Lei, T. F., 1 Feb 2008, In : IEEE Electron Device Letters. 29, 2, p. 171-173 3 p.

Research output: Contribution to journalArticle

15 Scopus citations

Characteristics of Poly-Si Junctionless FinFETs with HfZrO Using Forming Gas Annealing

Chung, S. T., Lee, Y. J. & Chao, T. S., 1 Jan 2020, In : IEEE Transactions on Nanotechnology. 19, p. 390-396 7 p., 9091928.

Research output: Contribution to journalArticle

Characteristics of polysilicon oxides combining N 2O nitridation and CMP processes

Lei, T. F., Chen, J. H., Wang, M. F. & Chao, T-S., 1 Aug 2000, In : IEEE Transactions on Electron Devices. 47, 8, p. 1545-1552 8 p.

Research output: Contribution to journalArticle

1 Scopus citations

Characteristics of self-aligned Si/Ge T-gate poly-si thin-film transistors with high on/off current ratio

Kuo, P. Y., Chao, T-S., Hsieh, P. S. & Lei, T. F., 1 May 2007, In : IEEE Transactions on Electron Devices. 54, 5, p. 1171-1176 6 p.

Research output: Contribution to journalArticle

10 Scopus citations

Characteristics of SONOS-Ttpe flash memory with in situ embedded silicon nanocrystals

Chiang, T. Y., Wu, Y. H., Ma, W. C. Y., Kuo, P. Y., Wang, K. T., Liao, C. C., Yeh, C. R., Yang, W. L. & Chao, T-S., 1 Aug 2010, In : IEEE Transactions on Electron Devices. 57, 8, p. 1895-1902 8 p., 5497125.

Research output: Contribution to journalArticle

10 Scopus citations

Characteristics of TEOS polysilicon oxides: Improvement by CMP and high temperature RTA N2/N2O annealing

Chen, J. H., Lei, T. F., Chen, J. H. & Chao, T-S., 1 Nov 2000, In : Journal of the Electrochemical Society. 147, 11, p. 4282-4288 7 p.

Research output: Contribution to journalArticle

9 Scopus citations

Characterization of C F4 -plasma fluorinated Hf O2 gate dielectrics with TaN metal gate

Lai, C. S., Wu, W. C., Wang, J. C. & Chao, T-S., 4 Jul 2005, In : Applied Physics Letters. 86, 22, p. 1-3 3 p., 222905.

Research output: Contribution to journalArticle

34 Scopus citations

Characterization of enhanced stress memorization technique on nMOSFETs by multiple strain-gate engineering

Lu, T. Y., Chang, T. S., Huang, S. A. & Chao, T-S., 1 Apr 2011, In : IEEE Transactions on Electron Devices. 58, 4, p. 1023-1028 6 p., 5723734.

Research output: Contribution to journalArticle

4 Scopus citations

Characterization of polysilicon oxides thermally grown and deposited on the polished polysilicon films

Lei, T. F., Cheng, J. Y., Shiau, S. Y., Chao, T-S. & Lai, C. S., 1 Dec 1998, In : IEEE Transactions on Electron Devices. 45, 4, p. 912-917 6 p., 662802.

Research output: Contribution to journalArticle

20 Scopus citations

Characterization of thin ZrO2 films deposited using Zr(Oi-Pr)2(thd)2 and O2 on Si(100)

Chen, H. W., Landheer, D., Wu, X., Moisa, S., Sproule, G. I., Chao, T-S. & Huang, T. Y., 1 May 2002, In : Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films. 20, 3, p. 1145-1148 4 p.

Research output: Contribution to journalArticle

12 Scopus citations

Characterization of ultra-thin Ni silicide film by two-step low temperature microwave anneal

Wu, C. T., Lee, Y. J., Hsueh, F. K., Sung, P. J., Cho, T. C., Current, M. I. & Chao, T-S., 1 Jan 2014, In : ECS Journal of Solid State Science and Technology. 3, 5

Research output: Contribution to journalArticle

1 Scopus citations

Characterized of ultrathin oxynitride (18-21 Å) gate dielectrics by NH 3 nitridation and N 2O RTA treatment

Pan, T. M., Lei, T. F., Wen, H. C. & Chao, T-S., 1 May 2001, In : IEEE Transactions on Electron Devices. 48, 5, p. 907-912 6 p.

Research output: Contribution to journalArticle

14 Scopus citations

Comparison of novel cleaning solutions with various chelating agents for post-CMP cleaning on poly-Si film

Pan, T. M., Lei, T. F., Ko, F-H., Chao, T-S., Chiu, T. H., Lee, Y. H. & Lu, C. P., 1 Nov 2001, In : IEEE Transactions on Semiconductor Manufacturing. 14, 4, p. 365-371 7 p.

Research output: Contribution to journalArticle

11 Scopus citations

Comparison of ultrathin CoTiO3 and NiTiO3 high-k gate dielectrics

Pan, T. M., Lei, T. F. & Chao, T-S., 15 Mar 2001, In : Journal of Applied Physics. 89, 6, p. 3447-3452 6 p.

Research output: Contribution to journalArticle

23 Scopus citations

Complementary carbon nanotube-gated carbon nanotube thin-film transistor

Chen, B. H., Lin, H-C., Huang, T. Y., Wei, J. H., Wang, H. H., Tsai, M. J. & Chao, T-S., 27 Feb 2006, In : Applied Physics Letters. 88, 9, 093502.

Research output: Contribution to journalArticle

18 Scopus citations

Comprehensive Analysis on Electrical Characteristics of Pi-Gate Poly-Si Junctionless FETs

Hsieh, D. R., Lin, J. Y., Kuo, P. Y. & Chao, T-S., 1 Jul 2017, In : IEEE Transactions on Electron Devices. 64, 7, p. 2992-2998 7 p., 7934337.

Research output: Contribution to journalArticle

2 Scopus citations

Comprehensive study on a novel bidirectional tunneling program/erase NOR-type (BiNOR) 3-D flash memory cell

Chou, A. H. F., Yang, E. C. S., Liu, C. J., Pong, H. H., Liaw, M. C., Chao, T-S., King, Y. C., Hwang, H. L. & Hsu, C. C. H., 1 Jul 2001, In : IEEE Transactions on Electron Devices. 48, 7, p. 1386-1393 8 p.

Research output: Contribution to journalArticle

3 Scopus citations

CoTiO3 high-κ dielectrics on HSG for DRAM applications

Chao, T-S., Ku, W. M., Lin, H. C., Landheer, D., Wang, Y. Y. & Mori, Y., 1 Dec 2004, In : IEEE Transactions on Electron Devices. 51, 12, p. 2200-2204 5 p.

Research output: Contribution to journalArticle

16 Scopus citations

Crossover Phenomenon in Oxidation Rates of the (110) and (111) Orientations of Silicon in N20

Chao, T-S. & Lei, T. F., 1 Jan 1995, In : Journal of the Electrochemical Society. 142, 3, p. L34-L35

Research output: Contribution to journalArticle

2 Scopus citations

Current transport mechanism for HfO 2 gate dielectrics with fluorine incorporation

Wu, W. C., Lai, C. S., Wang, T. M., Wang, J. C., Hsu, C. W., Ma, M. W. & Chao, T-S., 1 Jan 2008, In : Electrochemical and Solid-State Letters. 11, 1

Research output: Contribution to journalArticle

8 Scopus citations