1990 …2022

Research output per year

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1990

Ellipsometry measurement of the complex refractive index and thickness of polysilicon thin films

Hwang Ho, J., Len Lee, C., Fu Lei, T. & Chao, T-S., 1 Jan 1990, In : Journal of the Optical Society of America A: Optics and Image Science, and Vision. 7, 2, p. 196-205 10 p.

Research output: Contribution to journalArticle

13 Scopus citations
1991

Measurement of Ultrathin (<100 A) Oxide Films by Multiple-Angle Incident Ellipsometry

Chao, T-S., Lee, C. L. & Lei, T. F., 1 Jan 1991, In : Journal of the Electrochemical Society. 138, 6, p. 1756-1761 6 p.

Research output: Contribution to journalArticle

28 Scopus citations
1992

A study of the interfacial layer of Al and Al(1% Si)Si contacts using a zero-layer ellipsometry model

Chao, T-S., Lee, C. L. & Lei, T. F., 1 Jan 1992, In : Solid State Electronics. 35, 11, p. 1579-1584 6 p.

Research output: Contribution to journalArticle

Poly-oxide/poly-Si/SiO2/Si structure for ellipsometry measurement

Chao, T-S., Lee, C. L., Lei, T. F. & Yen, Y. T., 4 Jun 1992, In : Electronics Letters. 28, 12, p. 1144-1145 2 p.

Research output: Contribution to journalArticle

2 Scopus citations
1993

An Exothermic Phenomenon of Silicon Oxidation by N2O

Chao, T-S., Chen, W. H., Sun, S. C. & Chang, H. Y., 1 Jan 1993, In : Journal of the Electrochemical Society. 140, 11, p. L160-L161

Research output: Contribution to journalArticle

Open Access
4 Scopus citations

Ellipsometry study on refractive index profiles of the SiO 2/Si3N4/SiO2/Si structure

Chao, T-S., Lee, C. L. & Lei, T. F., 1 Dec 1993, In : Journal of Applied Physics. 73, 4, p. 1732-1736 5 p.

Research output: Contribution to journalArticle

8 Scopus citations

The refractive index of InP and its oxide measured by multiple-angle incident ellipsometry

Chao, T-S., Lee, C. L. & Lei, T. F., 1 Oct 1993, In : Journal of Materials Science Letters. 12, 10, p. 721-723 3 p.

Research output: Contribution to journalArticle

Thickness determination of poly-Si/poly-oxide/poly-Si/SiO2/Si structure by ellipsometer

Chao, T-S., Lee, C. L. & Lei, T. F., 1 Jan 1993, In : Electronics Letters. 29, 13, p. 1157-1159 3 p.

Research output: Contribution to journalArticle

1994

Multiple-Angle Incident Ellipsometry Measurement on Low Pressure Chemical Vapor Deposited Amorphous Silicon and Polysilicon

Chao, T-S., Lee, C. L. & Lei, T. F., 1 Jan 1994, In : Journal of the Electrochemical Society. 141, 8, p. 2146-2151 6 p.

Research output: Contribution to journalArticle

6 Scopus citations
1995

Crossover Phenomenon in Oxidation Rates of the (110) and (111) Orientations of Silicon in N20

Chao, T-S. & Lei, T. F., 1 Jan 1995, In : Journal of the Electrochemical Society. 142, 3, p. L34-L35

Research output: Contribution to journalArticle

2 Scopus citations

Effects of postetching treatments on electrical characteristics of -thermal oxides on reactive-ion-etched silicon substrates

Cheng, H-C., Ueng, S. Y., Wang, P. W., Kang, T. K. & Chao, T-S., 1 Jan 1995, In : Japanese Journal of Applied Physics. 34, 9R, p. 5037-5042 6 p.

Research output: Contribution to journalArticle

1 Scopus citations

Ellipsometric measurements and its alignment: Using the intensity ratio technique

Chao Yschao, Y. F., Wei, C. S., Lee, W. C., Lin, S. C. & Chao, T-S., 1 Jan 1995, In : Japanese Journal of Applied Physics. 34, 9R, p. 5016-5019 4 p.

Research output: Contribution to journalArticle

8 Scopus citations

Fourier transform infrared spectroscopic study of oxide films grown in pure n2О

Chao, T-S., Chen, W. H. & Lei, T. F., 1 Jan 1995, In : Japanese Journal of Applied Physics. 34, 5R, p. 2370-2373 4 p.

Research output: Contribution to journalArticle

11 Scopus citations

Improvement of thin oxides thermally grown on the reactive-ion-etched silicon substrates

Ueng, S. Y., Wang, P. W., Kang, T. K., Chao, T-S., Chen, W. H., Dai, B. T. & Cheng, H. C., 1 Jan 1995, In : Japanese Journal of Applied Physics. 34, 5R, p. 2266-2271 6 p.

Research output: Contribution to journalArticle

2 Scopus citations

Inhibition of bird's beak in LOCOS by new buffer N2O oxide

Chao, T-S., Cheng, J. Y. & Lei, T. F., 16 Feb 1995, In : Electronics Letters. 31, 4, p. 323-324 2 p.

Research output: Contribution to journalArticle

1 Scopus citations

Nitridation of the Stacked Poly-Si Gate to Suppress the Boron Penetration in pMOS

Lin, Y. H., Lai, C. S., Lee, C. L., Lei, T. F. & Chao, T-S., 1 Jan 1995, In : IEEE Electron Device Letters. 16, 6, p. 248-249 2 p.

Research output: Contribution to journalArticle

9 Scopus citations

Particle contaminations in LPCVD polysilicon

Chen, W. H., Chao, T-S., Liu, Y. N., Lei, T. F. & Chou, K. S., 2 Feb 1995, In : Electronics Letters. 31, 3, p. 239-241 3 p.

Research output: Contribution to journalArticle

Post-Polysilicon Gate-Process-Induced Degradation on Thin Gate Oxide

Lai, C. S., Lei, T. F., Lee, C. L. & Chao, T-S., 1 Jan 1995, In : IEEE Electron Device Letters. 16, 11, p. 470-472 3 p.

Research output: Contribution to journalArticle

2 Scopus citations

Suppression of boron penetration in pmos by using oxide gettering effect in poly-si gate

Lin, Y. H., Lee, C. L., Lei, T. F. & Chao, T-S., 1 Jan 1995, In : Japanese Journal of Applied Physics. 34, 2S, p. 752-756 5 p.

Research output: Contribution to journalArticle

2 Scopus citations

Thin Polyoxide on the Top of Poly-Si Gate to Suppress Boron Penetration for pMOS

Lin, Y. H., Lee, C. L., Lei, T. F. & Chao, T-S., 1 Jan 1995, In : IEEE Electron Device Letters. 16, 5, p. 164-165 2 p.

Research output: Contribution to journalArticle

6 Scopus citations
1996

Mechanism of nitrogen coimplant for suppressing boron penetration in p+-polycrystalline silicon gate of p metal-oxide semiconductor field effect transistor

Chao, T-S., Liaw, M. C., Chu, C. H., Chang, C. Y., Chien, C-H., Hao, C. P. & Lei, T. F., 16 Sep 1996, In : Applied Physics Letters. 69, 12, p. 1781-1782 2 p.

Research output: Contribution to journalArticle

27 Scopus citations

Nitridization of the stacked poly-si gate to suppress the boron penetration in pMOS

Lin Hao, Y., Lai, C. S., Lee Lcn, C., Lei, T. F. & Chao, T-S., 1 Dec 1996, In : IEEE Transactions on Electron Devices. 43, 7, p. 1161-1165 5 p.

Research output: Contribution to journalArticle

7 Scopus citations

Suppression of boron penetration in BF 2 + -implanted poly-Si gate

Chao, T-S., Chu, C. H., Wang, C. F., Kuai Junz, H. O., Lei, T. F. & Lee, C. L., 1 Dec 1996, In : Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 35, 12 A, p. 6003-6007 5 p.

Research output: Contribution to journalArticle

2 Scopus citations
1997

A novel planarization of oxide-filled shallow-trench isolation

Cheng, J. Y., Lei, T. F., Chao, T-S., Yen, D. L. W., Jin, B. J. & Lin, C. J., 1 Jan 1997, In : Journal of the Electrochemical Society. 144, 1, p. 315-320 6 p.

Research output: Contribution to journalArticle

11 Scopus citations

A novel shallow trench isolation technique

Cheng, J. Y., Lei, T. F. & Chao, T-S., 1 Mar 1997, In : Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 36, 3 SUPPL. B, p. 1319-1324 6 p.

Research output: Contribution to journalArticle

13 Scopus citations

A study on the radiation hardness of flash cell with horn-shaped floating-gate

Huang, T. Y., Jong, F. C., Chao, T-S., Lin, H-C., Leu, L. Y., Young, K., Lin, C. H. & Chiu, K. Y., 1 Sep 1997, In : Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 36, 9 A, p. 5459-5463 5 p.

Research output: Contribution to journalArticle

Effects of floating-gate doping concentration on flash cell performance

Huang, T. Y., Jong, F. C., Lin, H-C., Chao, T-S., Leu, L. Y., Young, K., Lin, C. H. & Chiu, K. Y., 1 Aug 1997, In : Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 36, 8, p. 5063-5067 5 p.

Research output: Contribution to journalArticle

Improved flash cell performance by N2O annealing of interpoly oxide

Jong, F. C., Huang, T. Y., Chao, T-S., Lin, H-C., Leu, L. Y., Young, K., Lin, C. H. & Chiu, K. Y., 1 Jul 1997, In : IEEE Electron Device Letters. 18, 7, p. 343-345 3 p.

Research output: Contribution to journalArticle

9 Scopus citations

Improvement of polysilicon oxide by growing on polished polysilicon film

Lei, T. F., Cheng, J. Y., Shiau, S. Y., Chao, T-S. & Lai, C. S., 1 Jun 1997, In : IEEE Electron Device Letters. 18, 6, p. 270-271 2 p.

Research output: Contribution to journalArticle

15 Scopus citations
3 Scopus citations

Suppression of boron penetration by using inductive-coupling-nitrogen-plasma in stacked amorphous/polysilicon gate structure

Yang, W. L., Lin, C. J., Chao, T-S., Liu, D. G. & Lei, T. F., 19 Jun 1997, In : Electronics Letters. 33, 13, p. 1139-1140 2 p.

Research output: Contribution to journalArticle

1 Scopus citations

Suppression of boron penetration in P+-poly-Si gate metal-oxide-semiconductor transistor using nitrogen implantation

Chao, T-S., Chien, C-H., Hao, C. P., Liaw, M. C., Chu, C. H., Chang, C. Y., Lei, T. F., Sun, W. T. & Hsu, C. H., 1 Mar 1997, In : Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 36, 3 SUPPL. B, p. 1364-1367 4 p.

Research output: Contribution to journalArticle

12 Scopus citations
1998

A novel self-aligned T-shaped gate process for deep submicron Si MOSFET's fabrication

Lin, H-C., Lin, R., Wu, W. F., Yang, R. P., Tsai, M. S., Chao, T-S. & Huang, T. Y., 1 Jan 1998, In : IEEE Electron Device Letters. 19, 1, p. 26-28 3 p.

Research output: Contribution to journalArticle

7 Scopus citations

Characterization of polysilicon oxides thermally grown and deposited on the polished polysilicon films

Lei, T. F., Cheng, J. Y., Shiau, S. Y., Chao, T-S. & Lai, C. S., 1 Dec 1998, In : IEEE Transactions on Electron Devices. 45, 4, p. 912-917 6 p., 662802.

Research output: Contribution to journalArticle

20 Scopus citations

Effects of N 2 O-annealed sacrificial oxide on the short-channel effects of nMOSFETs

Jong, F. C., Huang, T. Y., Chao, T-S., Lin, H-C., Wang, M. F. & Chang, C. Y., 19 Feb 1998, In : Electronics Letters. 34, 4, p. 404-406 3 p.

Research output: Contribution to journalArticle

Improving radiation hardness of EEPROM/flash cell by N 2 O annealing

Huang, T. Y., Jong, F. C., Chao, T-S., Lin, H-C., Leu, L. Y., Young, K., Lin, C. H. & Chiu, K. Y., 1 Jul 1998, In : IEEE Electron Device Letters. 19, 7, p. 256-258 3 p.

Research output: Contribution to journalArticle

10 Scopus citations

Suppression of boron penetration in p+ polysilicon gate using Si-B diffusion source

Chao, T-S., Kuo, C. P., Lei, T. F., Chen, T. P., Huang, T. Y. & Chang, C. Y., 8 Jan 1998, In : Electronics Letters. 34, 1, p. 128-129 2 p.

Research output: Contribution to journalArticle

2 Scopus citations
1999

A comprehensive study of hot carrier stress-induced drain leakage current degradation in thin-oxide n-MOSFET's

Wang, T-H., Chiang, L. P., Zous, N. K., Hsu, C. F., Huang, L. Y. & Chao, T-S., 1 Dec 1999, In : IEEE Transactions on Electron Devices. 46, 9, p. 1877-1882 6 p.

Research output: Contribution to journalArticle

37 Scopus citations

A novel Si-B diffusion source for p+-poly-Si gate

Chao, T-S., Kuo, C. P., Chen, T. P. & Lei, T. F., 1 Jan 1999, In : Journal of the Electrochemical Society. 146, 10, p. 3852-3855 4 p.

Research output: Contribution to journalArticle

A study of interface trap generation by fowler-nordheim and substrate-hot-carrier stresses for 4-nm thick gate oxides

Shiue, J. H., Lee, J. Y. M. & Chao, T-S., 1 Dec 1999, In : IEEE Transactions on Electron Devices. 46, 8, p. 1705-1710 6 p.

Research output: Contribution to journalArticle

25 Scopus citations

Enhancement of integrity of polysilicon oxide by using a combination of N2O nitridation and CMP process

Lei, T. F., Chen, J. H., Wang, M. F. & Chao, T-S., 1 Jan 1999, In : IEEE Electron Device Letters. 20, 5, p. 235-237 3 p.

Research output: Contribution to journalArticle

2 Scopus citations

Improvement of junction leakage of nickel silicided junction by a Ti-capping layer

Hou, T-H., Lei, T. F. & Chao, T-S., 1 Nov 1999, In : IEEE Electron Device Letters. 20, 11, p. 572-573 2 p.

Research output: Contribution to journalArticle

55 Scopus citations

Improvement of ultra-thin 3.3 nm thick oxide for Co-salicide process using NF 3 annealed poly-gate

Chang, T. Y., Lei, T. F., Chao, T-S., Huang, C. T., Chen, S. K., Tuan, A. & Chou, S., 1 Dec 1999, In : Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 38, 4 B, p. 2243-2246 4 p.

Research output: Contribution to journalArticle

Local electric-field-induced oxidation of titanium nitride films

Gwo, S., Yeh, C. L., Chen, P. F., Chou, Y. C., Chen, T. T., Chao, T-S., Hu, S. F. & Huang, T. Y., 1 Dec 1999, In : Applied Physics Letters. 74, 8, p. 1090-1092 3 p.

Research output: Contribution to journalArticle

60 Scopus citations

Novel bidirectional tunneling program/erase nor (binor)type flash eeprom

Yang, E. C. S., Liu, C. J., Liaw, M. C., Chao, T-S. & Hsu, C. C. H., 1 Dec 1999, In : IEEE Transactions on Electron Devices. 46, 6, 1 p.

Research output: Contribution to journalArticle

1 Scopus citations
2000

Anomalous crossover in Vth roll-off for indium-doped nMOSFETs

Chang, S. J., Chang, C. Y., Chen, C., Chou, J. W., Chao, T-S. & Huang, T. Y., Sep 2000, In : IEEE Electron Device Letters. 21, 9, p. 457-459 3 p.

Research output: Contribution to journalArticle

5 Scopus citations

Characteristics of polysilicon oxides combining N 2O nitridation and CMP processes

Lei, T. F., Chen, J. H., Wang, M. F. & Chao, T-S., 1 Aug 2000, In : IEEE Transactions on Electron Devices. 47, 8, p. 1545-1552 8 p.

Research output: Contribution to journalArticle

1 Scopus citations

Characteristics of TEOS polysilicon oxides: Improvement by CMP and high temperature RTA N2/N2O annealing

Chen, J. H., Lei, T. F., Chen, J. H. & Chao, T-S., 1 Nov 2000, In : Journal of the Electrochemical Society. 147, 11, p. 4282-4288 7 p.

Research output: Contribution to journalArticle

9 Scopus citations