1990 …2022

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2020

Characteristics of Poly-Si Junctionless FinFETs with HfZrO Using Forming Gas Annealing

Chung, S. T., Lee, Y. J. & Chao, T. S., 1 Jan 2020, In : IEEE Transactions on Nanotechnology. 19, p. 390-396 7 p., 9091928.

Research output: Contribution to journalArticle

Effect of Seed Layer on Gate-All-Around Poly-Si Nanowire Negative-Capacitance FETs with MFMIS and MFIS Structures: Planar Capacitors to 3-D FETs

Lee, S. Y., Chen, H. W., Shen, C. H., Kuo, P. Y., Chung, C. C., Huang, Y. E., Chen, H. Y. & Chao, T. S., Feb 2020, In : IEEE Transactions on Electron Devices. 67, 2, p. 711-716 6 p., 8951114.

Research output: Contribution to journalArticle

2 Scopus citations

Effects of Forming Gas Annealing and Channel Dimensions on the Electrical Characteristics of FeFETs and CMOS Inverter

Sung, P. J., Su, C. J., Lo, S. H., Hsueh, F. K., Lu, D. D., Lee, Y. J. & Chao, T. S., 1 Jan 2020, In : IEEE Journal of the Electron Devices Society. 8, p. 474-480 7 p., 9063644.

Research output: Contribution to journalArticle

Open Access

Fabrication of Vertically Stacked Nanosheet Junctionless Field-Effect Transistors and Applications for the CMOS and CFET Inverters

Sung, P-J., Chang, S-W., Kao, K-H., Wu, C-T., Su, C-J., Cho, T-C., Hsueh, F-K., Lee, W-H., Lee, Y-J. & Chao, T-S., 23 Jul 2020, In : Ieee Transactions On Electron Devices. 67, 9, p. 3504-3509 6 p.

Research output: Contribution to journalArticle

Nitride Induced Stress Affecting Crystallinity of Sidewall Damascene Gate-All-Around Nanowire Poly-Si FETs

Shen, C. H., Chen, W. Y., Lee, S. Y., Kuo, P. Y. & Chao, T. S., 1 Jan 2020, In : IEEE Transactions on Nanotechnology. 19, p. 322-327 6 p., 9044627.

Research output: Contribution to journalArticle

2019

Experimental Demonstration of Stacked Gate-All-Around Poly-Si Nanowires Negative Capacitance FETs with Internal Gate Featuring Seed Layer and Free of Post-Metal Annealing Process

Lee, S. Y., Chen, H. W., Shen, C. H., Kuo, P. Y., Chung, C. C., Huang, Y. E., Chen, H. Y. & Chao, T. S., Nov 2019, In : IEEE Electron Device Letters. 40, 11, p. 1708-1711 4 p., 8835096.

Research output: Contribution to journalArticle

4 Scopus citations

Investigation of Nitrous Oxide Nitridation Temperatures on P-Type Pi-Gate Poly-Si Junctionless Accumulation Mode TFTs

Hsieh, D. R., Lin, K. C. & Chao, T-S., 1 Jan 2019, In : IEEE Journal of the Electron Devices Society. 7, p. 268-275 8 p., 8630465.

Research output: Contribution to journalArticle

Open Access
1 Scopus citations
Open Access
2018

Investigation of Channel Doping Concentration and Reverse Boron Penetration on P-Type Pi-Gate Poly-Si Junctionless Accumulation Mode FETs

Hsieh, D. R., Chan, Y. D., Kuo, P. Y. & Chao, T-S., 7 Feb 2018, In : IEEE Journal of the Electron Devices Society. 6, 1, p. 314-319 6 p.

Research output: Contribution to journalArticle

Open Access
2 Scopus citations

Junctionless FETs with a Fin Body for Multi-V TH and Dynamic Threshold Operation

Kumar, M. P. V., Lin, J. Y., Kao, K. H. & Chao, T-S., 1 Aug 2018, In : IEEE Transactions on Electron Devices. 65, 8, p. 3535-3542 8 p., 8399532.

Research output: Contribution to journalArticle

4 Scopus citations

Junctionless Nanosheet (3 nm) Poly-Si TFT: Electrical Characteristics and Superior Positive Gate Bias Stress Reliability

Lin, J. Y., Kumar, M. P. V. & Chao, T-S., 1 Jan 2018, In : IEEE Electron Device Letters. 39, 1, p. 8-11 4 p., 8126800.

Research output: Contribution to journalArticle

10 Scopus citations

Stacked Sidewall-Damascene Double-Layer Poly-Si Trigate FETs with RTA-Improved Crystallinity

Shen, C. H., Kuo, P. Y., Chung, C. C., Lee, S. Y. & Chao, T-S., 1 Apr 2018, In : IEEE Electron Device Letters. 39, 4, p. 512-515 4 p.

Research output: Contribution to journalArticle

4 Scopus citations

Variable-Channel Junctionless Poly-Si FETs: Demonstration and Investigation with Different Body Doping Concentrations

Lin, J. Y., Tsai, C. Y., Shen, C. H., Chung, C. C., Kumar, M. P. V. & Chao, T-S., 1 Sep 2018, In : IEEE Electron Device Letters. 39, 9, p. 1326-1329 4 p., 8417437.

Research output: Contribution to journalArticle

Vertically Stacked Cantilever n-Type Poly-Si Junctionless Nanowire Transistor and Its Series Resistance Limit

Chung, C. C. C., Shen, C. H., Lin, J. Y., Chin, C. C. & Chao, T-S., 1 Feb 2018, In : IEEE Transactions on Electron Devices. 65, 2, p. 756-762 7 p., 8233410.

Research output: Contribution to journalArticle

12 Scopus citations
2017

Comprehensive Analysis on Electrical Characteristics of Pi-Gate Poly-Si Junctionless FETs

Hsieh, D. R., Lin, J. Y., Kuo, P. Y. & Chao, T-S., 1 Jul 2017, In : IEEE Transactions on Electron Devices. 64, 7, p. 2992-2998 7 p., 7934337.

Research output: Contribution to journalArticle

2 Scopus citations

High-performance sidewall damascened tri-gate poly-si TFTs with the strain proximity free technique and stress memorization technique

Hsieh, D. R., Kuo, P. Y., Lin, J. Y., Chen, Y. H., Chang, T. S. & Chao, T-S., 9 Jan 2017, In : Semiconductor Science and Technology. 32, 2, 025004.

Research output: Contribution to journalArticle

2 Scopus citations

High-Performance Uniaxial Tensile Strained n-Channel JL SOI FETs and Triangular JL Bulk FinFETs for Nanoscaled Applications

Sung, P. J., Cho, T. C., Hou, F. J., Hsueh, F. K., Chung, S. T., Lee, Y. J., Current, M. I. & Chao, T-S., 1 May 2017, In : IEEE Transactions on Electron Devices. 64, 5, p. 2054-2060 7 p., 7885526.

Research output: Contribution to journalArticle

3 Scopus citations

Improving the Electrical Performance of a Quantum Well FET with a Shell Doping Profile by Heterojunction Optimization

Kumar, M. P. V., Hu, C. Y., Walke, A. M., Kao, K. H. & Chao, T-S., 1 Sep 2017, In : IEEE Transactions on Electron Devices. 64, 9, p. 3563-3568 6 p., 7990547.

Research output: Contribution to journalArticle

3 Scopus citations
2016

High-Performance Pi-Gate Poly-Si Junctionless and Inversion Mode FET

Hsieh, D. R., Lin, J. Y., Kuo, P. Y. & Chao, T-S., 1 Nov 2016, In : IEEE Transactions on Electron Devices. 63, 11, p. 4179-4184 6 p., 7582399.

Research output: Contribution to journalArticle

7 Scopus citations

Junctionless Poly-Si Nanowire Transistors with Low-Temperature Trimming Process for Monolithic 3-D IC Application

Lin, J. Y., Kuo, P. Y., Lin, K. L., Chin, C. C. & Chao, T-S., 1 Dec 2016, In : IEEE Transactions on Electron Devices. 63, 12, p. 4998-5003 6 p., 7676340.

Research output: Contribution to journalArticle

13 Scopus citations

Label-free and real-time detection of ferritin using a horn-like polycrystalline-silicon nanowire field-effect transistor biosensor

Yen, L. C., Pan, T. M., Lee, C. H. & Chao, T-S., 1 Jul 2016, In : Sensors and Actuators, B: Chemical. 230, p. 398-404 7 p.

Research output: Contribution to journalArticle

17 Scopus citations
2015

High-performance poly-Si TFT with ultra-thin channel film and gate oxide for low-power application

Chen, Y. H., Ma, W. C. Y. & Chao, T-S., 1 Sep 2015, In : Semiconductor Science and Technology. 30, 10, 105017.

Research output: Contribution to journalArticle

10 Scopus citations

Impact of Crystallization Method on Poly-Si Tunnel FETs

Chen, Y. H., Ma, W. C. Y., Lin, J. Y., Lin, C. Y., Hsu, P. Y., Huang, C. Y. & Chao, T-S., 1 Oct 2015, In : IEEE Electron Device Letters. 36, 10, p. 1060-1062 3 p., 7194770.

Research output: Contribution to journalArticle

9 Scopus citations

Impacts of the Shell Doping Profile on the Electrical Characteristics of Junctionless FETs

Kumar, M. P. V., Hu, C. Y., Kao, K. H., Lee, Y. J. & Chao, T-S., 7 Sep 2015, In : IEEE Transactions on Electron Devices. 62, 11, p. 3541-3546 6 p., 7244201.

Research output: Contribution to journalArticle

20 Scopus citations

Switching characteristics in Cu:SiO2 by chemical soak methods for resistive random access memory (ReRAM)

Chin, F. T., Lin, Y. H., Yang, W. L., Liao, C. H., Lin, L. M., Hsiao, Y. P. & Chao, T-S., 1 Jan 2015, In : Solid-State Electronics. 103, p. 190-194 5 p.

Research output: Contribution to journalArticle

7 Scopus citations
2014

Advanced Cu chemical displacement technique for SiO2-based electrochemical metallization ReRAM application

Chin, F. T., Lin, Y. H., You, H. C., Yang, W. L., Lin, L. M., Hsiao, Y. P., Ko, C. M. & Chao, T-S., 1 Jan 2014, In : Nanoscale Research Letters. 9, 1

Research output: Contribution to journalArticle

Open Access
9 Scopus citations

Characterization of ultra-thin Ni silicide film by two-step low temperature microwave anneal

Wu, C. T., Lee, Y. J., Hsueh, F. K., Sung, P. J., Cho, T. C., Current, M. I. & Chao, T-S., 1 Jan 2014, In : ECS Journal of Solid State Science and Technology. 3, 5

Research output: Contribution to journalArticle

1 Scopus citations

Effect of sensing film thickness on sensing characteristics of dual-gate poly-si ion-sensitive field-effect-transistors

Yen, L. C., Tang, M. T., Tan, C. Y., Pan, T. M. & Chao, T-S., 1 Dec 2014, In : IEEE Electron Device Letters. 35, 12, p. 1302-1304 3 p., 6954697.

Research output: Contribution to journalArticle

5 Scopus citations

High-performance GAA sidewall-damascened sub-10-nm in situ n+-doped poly-Si NWs channels junctionless FETs

Kuo, P. Y., Lu, Y. H. & Chao, T-S., 1 Nov 2014, In : IEEE Transactions on Electron Devices. 61, 11, p. 3821-3826 6 p., 6897955.

Research output: Contribution to journalArticle

18 Scopus citations

Improvement in pH sensitivity of low-temperature polycrystalline-silicon thin-film transistor sensors using H2 sintering

Yen, L. C., Tang, M. T., Chang, F. Y., Pan, T. M., Chao, T-S. & Lee, C. H., 25 Feb 2014, In : Sensors (Switzerland). 14, 3, p. 3825-3832 8 p.

Research output: Contribution to journalArticle

Open Access
5 Scopus citations

Ion-bombarded and plasma-passivated charge storage layer for SONOS-type nonvolatile memory

Liu, S. H., Wu, C. C., Yang, W. L., Lin, Y. H. & Chao, T-S., 1 Jan 2014, In : IEEE Transactions on Electron Devices. 61, 9, p. 3179-3185 7 p., 6872548.

Research output: Contribution to journalArticle

2 Scopus citations
2013

Al-SiO2-Y2O3-SiO2-poly-si thin-film transistor nonvolatile memory incorporating a Y2O 3 charge trapping layer

Pan, T. M., Yen, L. C., Mondal, S., Lo, C. T. & Chao, T-S., 26 Jul 2013, In : ECS Solid State Letters. 2, 10

Research output: Contribution to journalArticle

2 Scopus citations

Channel thickness effect on high-frequency performance of poly-Si thin-film transistors

Chen, K. M., Tsai, T. I., Lin, T. Y., Lin, H-C., Chao, T-S., Huang, G. W. & Huang, T. Y., 12 Jul 2013, In : IEEE Electron Device Letters. 34, 8, p. 1020-1022 3 p., 6553156.

Research output: Contribution to journalArticle

10 Scopus citations

Enhancement of open-circuit voltage using CF 4 Plasma treatment on nitric acid oxides

Lin, J. W., Wu, C. H., Wu, S. W., Hseih, W. P., Du, C. H. & Chao, T-S., 7 May 2013, In : IEEE Electron Device Letters. 34, 5, p. 665-667 3 p., 6495702.

Research output: Contribution to journalArticle

High-performance double-layer nickel Nanocrystal memory by ion bombardment technique

Liu, S. H., Yang, W. L., Lin, Y. H., Wu, C. C. & Chao, T-S., 4 Oct 2013, In : IEEE Transactions on Electron Devices. 60, 10, p. 3393-3399 7 p., 6605590.

Research output: Contribution to journalArticle

5 Scopus citations

High-performance polyimide-based ReRAM for nonvolatile memory application

Liu, S. H., Yang, W. L., Wu, C. C., Chao, T-S., Ye, M. R., Su, Y. Y., Wang, P. Y. & Tsai, M. J., 1 Jan 2013, In : IEEE Electron Device Letters. 34, 1, p. 123-125 3 p., 6365747.

Research output: Contribution to journalArticle

16 Scopus citations

High-κEu2O3 and Y2O3 poly-Si thin-film transistor nonvolatile memory devices

Pan, T. M., Yen, L. C., Huang, S. H., Lo, C. T. & Chao, T-S., 15 Jul 2013, In : IEEE Transactions on Electron Devices. 60, 7, p. 2251-2255 5 p., 6523940.

Research output: Contribution to journalArticle

5 Scopus citations

Impacts of multiple strain-gate engineering on a zero-temperature- coefficient point

Chang, T. S., Lu, T. Y. & Chao, T-S., 5 Apr 2013, In : IEEE Electron Device Letters. 34, 4, p. 481-486 6 p., 6484132.

Research output: Contribution to journalArticle

1 Scopus citations

Improved rear-side passivation by atomic layer deposition A 2 O 3 /SiN x stack layers for high V OC industrial p-type silicon solar cells

Lin, J. W., Chen, Y. Y., Gan, J. Y., Hseih, W. P., Du, C. H. & Chao, T-S., 3 Sep 2013, In : IEEE Electron Device Letters. 34, 9, p. 1163-1165 3 p., 6558507.

Research output: Contribution to journalArticle

1 Scopus citations

Low-temperature polycrystalline-silicon tunneling thin-film transistors with MILC

Chen, Y. H., Yen, L. C., Chang, T. S., Chiang, T. Y., Kuo, P. Y. & Chao, T-S., 7 Aug 2013, In : IEEE Electron Device Letters. 34, 8, p. 1017-1019 3 p., 6544264.

Research output: Contribution to journalArticle

16 Scopus citations

Microwave annealing of phosphorus and cluster carbon implanted (100) and (110) Si

Cho, T. C., Lu, Y. L., Yao, J. Y., Lee, Y. J., Sekar, K., Tokoro, N., Onoda, H., Krull, W., Current, M. I. & Chao, T-S., 15 Nov 2013, In : ECS Journal of Solid State Science and Technology. 2, 7

Research output: Contribution to journalArticle

2 Scopus citations

Novel ion bombardment technique for doping limited Cu source in SiO x-based nonvolatile switching layer

Liu, S. H., Yang, W. L., Lin, Y. H., Wu, C. C. & Chao, T-S., 23 Sep 2013, In : IEEE Electron Device Letters. 34, 11, p. 1388-1390 3 p., 6603277.

Research output: Contribution to journalArticle

11 Scopus citations
2012

A novel ion-bombarded and plasma-passivated charge storage layer for SONOS-type nonvolatile memory

Liu, S. H., Yang, W. L., Wu, C. C. & Chao, T-S., 29 Aug 2012, In : IEEE Electron Device Letters. 33, 10, p. 1393-1395 3 p., 6280616.

Research output: Contribution to journalArticle

9 Scopus citations

Electrical and reliability characteristics of polycrystalline silicon thin-film transistors with high-κ Eu 2O 3 gate dielectrics

Yen, L. C., Hu, C. W., Chiang, T. Y., Chao, T-S. & Pan, T. M., 23 Apr 2012, In : Applied Physics Letters. 100, 17, 173509.

Research output: Contribution to journalArticle

19 Scopus citations

High-performance poly-si thin-film transistors with L-fin channels

Lu, Y. H., Kuo, P. Y., Lin, J. W., Wu, Y. H., Chen, Y. H. & Chao, T-S., 1 Feb 2012, In : IEEE Electron Device Letters. 33, 2, p. 215-217 3 p., 6095584.

Research output: Contribution to journalArticle

1 Scopus citations

Hydrogen instability induced by postannealing on poly-Si TFTs

Liao, C. C., Lin, M. C. & Chao, T-S., 24 Apr 2012, In : IEEE Transactions on Electron Devices. 59, 6, p. 1807-1809 3 p., 6185651.

Research output: Contribution to journalArticle

2 Scopus citations

Impacts of the underlying insulating layers on the MILC growth length and electrical characteristics

Liao, C. C., Lin, M. C., Liu, S. X. & Chao, T-S., 1 Feb 2012, In : IEEE Electron Device Letters. 33, 2, p. 239-241 3 p., 6101550.

Research output: Contribution to journalArticle

1 Scopus citations

Low-operating-voltage ultrathin junctionless poly-si thin-film transistor technology for RF applications

Tsai, T. I., Chen, K. M., Lin, H-C., Lin, T. Y., Su, C. J., Chao, T-S. & Huang, T. Y., 21 Sep 2012, In : IEEE Electron Device Letters. 33, 11, p. 1565-1567 3 p., 6302168.

Research output: Contribution to journalArticle

4 Scopus citations

Low-temperature poly-Si nanowire junctionless devices with gate-all-around TiN/Al2O3 stack structure using an implant-free technique

Su, C. J., Tsai, T. I., Lin, H-C., Huang, T. Y. & Chao, T-S., 24 Jul 2012, In : Nanoscale Research Letters. 7, p. 1-14 14 p.

Research output: Contribution to journalArticle

Open Access
6 Scopus citations