Engineering & Materials Science
Polysilicon
Oxides
Thin film transistors
Gate dielectrics
Annealing
Field effect transistors
Leakage currents
MOSFET devices
Plasmas
Temperature
Nanowires
Threshold voltage
Data storage equipment
Nitrogen
Silicon
Rapid thermal annealing
Doping (additives)
Hot carriers
Metals
Nitrides
Boron
Fluorine
Nitridation
Ions
Nanocrystals
Flash memory
Microwaves
Substrates
Transistors
Silicon oxides
Fabrication
Electric potential
FinFET
Capacitance
Interface states
Ellipsometry
Cleaning
Degradation
Crystallization
Electric properties
Passivation
Lithography
Negative bias temperature instability
Charge trapping
Oxide semiconductors
Transconductance
Chemical activation
Oxidation
Chemical mechanical polishing
Silicates
Chemical Compounds
Polysilicon
Oxides
Thin film transistors
Field effect transistors
Annealing
Gate dielectrics
Silicon
Temperature
Nanowires
Data storage equipment
Plasmas
Threshold voltage
Nitridation
Leakage currents
Metals
Rapid thermal annealing
Doping (additives)
Fluorine
Crystallization
silicon nitride
Flash memory
Nitrides
Hot carriers
Nitrogen
Microwaves
Fabrication
Boron
Nanocrystals
MOSFET devices
FinFET
Capacitance
Transistors
Cleaning
Substrates
Electric potential
Silicates
Passivation
Silicon oxides
Ions
Charge trapping
Ellipsometry
Chemical mechanical polishing
Chemical activation
Thin films
Electric properties
Physics & Astronomy
field effect transistors
oxides
metal oxide semiconductors
transistors
silicon
implantation
performance
nitrogen
leakage
threshold voltage
fluorine
boron
thin films