Engineering & Materials Science
Activation energy
Aluminum oxide
Annealing
Atomic layer deposition
Capacitance
Capacitors
Chemical vapor deposition
Degradation
Electric breakdown
Electric potential
Electroluminescence
Electrons
Ferroelectric devices
Ferroelectric materials
Ferroelectricity
Field effect transistors
Gamma rays
Gate dielectrics
Hafnium
Heterojunctions
High electron mobility transistors
Hot electrons
Hysteresis
Interface states
Irradiation
Junction gate field effect transistors
Leakage currents
Luminescence
Management information systems
Metals
Ohmic contacts
Physics
Plasmas
Polarization
Power HEMT
Schottky barrier diodes
Semiconductor materials
Shielding
Substrates
Temperature
Threshold voltage
Transistors
Two dimensional electron gas
Voltage measurement
Weibull distribution
Ytterbium
Chemical Compounds
aluminum gallium nitride
Aluminum oxide
Aluminum Oxide
Annealing
Atomic layer deposition
Capacitors
Degradation
Electric breakdown
Electric potential
Electrons
Ferroelectric devices
Ferroelectric materials
Gamma rays
Gate dielectrics
Hafnium
Heterojunctions
High electron mobility transistors
Hot electrons
Interface states
Irradiation
Junction gate field effect transistors
Leakage currents
Management information systems
Metals
Ohmic contacts
Plasmas
Power HEMT
Semiconductor materials
silicon nitride
Substrates
Temperature
Threshold voltage
Transistors
Two dimensional electron gas
Ytterbium
zirconium oxide
Physics & Astronomy
atomic layer epitaxy
borders
capacitance
degradation
field effect transistors
hafnium oxides
high electron mobility transistors
hot electrons
insulators
irradiation
leakage
MIS (semiconductors)
shift
threshold voltage
transistors
trapping
traps
