1982 …2020

Research output per year

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Research Output

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Conference article
2007

Characterization and Monte Carlo analysis of secondary electrons induced program disturb in a buried diffusion bit-line SONOS flash memory

Tang, C. J., Li, C. W., Wang, T-H., Gu, S. H., Chen, P. C., Chang, Y. W., Lu, T. C., Lu, W. P., Chen, K. C. & Lu, C. Y., 1 Dec 2007, In : Technical Digest - International Electron Devices Meeting, IEDM. p. 173-176 4 p., 4418894.

Research output: Contribution to journalConference article

8 Scopus citations

Impact of self-heating effect on hot carrier degradation in high-voltage LDMOS

Cheng, C. C., Lin, J. F., Wang, T-H., Hsieh, T. H., Tzeng, J. T., Jong, Y. C., Liou, R. S., Pan, S. C. & Hsu, S. L., 1 Dec 2007, In : Technical Digest - International Electron Devices Meeting, IEDM. p. 881-884 4 p., 4419090.

Research output: Contribution to journalConference article

18 Scopus citations
2005

A novel NAND-type PHINES nitride trapping storage flash memory cell with physically 2-bits-per-cell storage, and a high programming throughput for mass storage applications

Yeh, C. C., Wang, T-H., Liao, Y. Y., Tsai, W. J., Lu, T. C., Chen, M. S., Chen, Y. R., Chen, K. F., Han, Z. T., Wong, M. S., Hsu, S. M., Zous, N. K., Ou, T. F., Ting, W., Ku, J. & Lu, C. Y., 1 Dec 2005, In : Digest of Technical Papers - Symposium on VLSI Technology. 2005, p. 116-117 2 p., 1469234.

Research output: Contribution to journalConference article

9 Scopus citations

Investigation of post-NBTI stress recovery in pMOSFETs by direct measurement of single oxide charge De-trapping

Chan, C. T., Ma, H. C., Tang, C. J. & Wang, T-H., 1 Dec 2005, In : Digest of Technical Papers - Symposium on VLSI Technology. 2005, p. 90-91 2 p., 1469224.

Research output: Contribution to journalConference article

17 Scopus citations
2004

Cause of erase speed degradation during two-bit per cell operation of a trapping nitride storage flash memory cell

Tsai, W. J., Zous, N. K., Chou, M. H., Huang, S., Chen, H. Y., Yeh, Y. H., Liu, M. Y., Yeh, C. C., Wang, T-H., Ku, J. & Lu, C. Y., 1 Jan 2004, In : IEEE International Reliability Physics Symposium Proceedings. 2004-January, January, p. 522-526 5 p., 1315383.

Research output: Contribution to journalConference article

8 Scopus citations

Hot carrier degradation in novel strained-Si nMOSFETs

Lu, M. F., Chiang, S., Liu, A., Huang-Lu, S., Yeh, M. S., Hwang, J. R., Tang, T. H., Shiau, W. T., Chen, M. C. & Wang, T-H., 12 Jul 2004, In : IEEE International Reliability Physics Symposium Proceedings. p. 18-22 5 p., 1315295.

Research output: Contribution to journalConference article

13 Scopus citations

Investigation of programmed charge lateral spread in a two-bit storage nitride flash memory cell by using a charge pumping technique

Gu, S. H., Wang, M. T., Chan, C. T., Zous, N. K., Yeh, C. C., Tsai, W. J., Lu, T. C., Wang, T-H., Ku, J. & Lu, C. Y., 12 Jul 2004, In : IEEE International Reliability Physics Symposium Proceedings. 2004-January, January, p. 639-640 2 p., 1315428.

Research output: Contribution to journalConference article

2 Scopus citations

Multi-level memory systems using error control codes

Chang, H-C., Lin, C. C., Hsiao, T. Y., Wu, J-T. & Wang, T-H., 7 Sep 2004, In : Proceedings - IEEE International Symposium on Circuits and Systems. 2

Research output: Contribution to journalConference article

8 Scopus citations

The improvement of copper interconnect electromigration resistance by cap/dielectric interface treatment and geometrical design

Lin, M. H., Lin, Y. L., Chen, J. M., Tsai, C. C., Yeh, M. S., Liu, C. C., Hsu, S., Wang, C. H., Sheng, Y. C., Chang, K. P., Su, K. C., Chang, Y. J. & Wang, T-H., 1 Jan 2004, In : IEEE International Reliability Physics Symposium Proceedings. 2004-January, January, p. 229-233 5 p., 1315328.

Research output: Contribution to journalConference article

8 Scopus citations
2003

Novel Operation Schemes to Improve Device Reliability in a Localized Trapping Storage SONOS-type Flash Memory

Yeh, C. C., Tsai, W. J., Lu, T. C., Chen, H. Y., Lai, H. C., Zous, N. K., Liao, Y. Y., You, G. D., Cho, S. K., Liu, C. C., Hsu, F. S., Huang, L. T., Chiang, W. S., Liu, C. J., Cheng, C. F., Chou, M. H., Chen, C. H., Wang, T-H., Ting, W., Pan, S. & 2 others, Ku, J. & Lu, C. Y., 1 Dec 2003, In : Technical Digest - International Electron Devices Meeting. p. 173-176 4 p.

Research output: Contribution to journalConference article

9 Scopus citations

Reliability Models of Data Retention and Read-Disturb in 2-bit Nitride Storage Flash Memory Cells (Invited Paper)

Wang, T-H., Tsai, W. J., Gu, S. H., Chan, C. T., Yeh, C. C., Zous, N. K., Lu, T. C., Pan, S. & Lu, C. Y., 1 Dec 2003, In : Technical Digest - International Electron Devices Meeting. p. 169-172 4 p.

Research output: Contribution to journalConference article

40 Scopus citations
2002

PHINES: A novel low power program/erase, small pitch, 2-bit per cell flash memory

Yeh, C. C., Tsai, W. J., Liu, M. I., Lu, T. C., Cho, S. K., Lin, C. J., Wang, T-H., Pan, S. & Lu, C. Y., 1 Dec 2002, In : Technical Digest - International Electron Devices Meeting. p. 931-934 4 p.

Research output: Contribution to journalConference article

25 Scopus citations
2001

Antimony assisted arsenic S/D extension (A3 SDE) engineering for sub-0.1μm nMOSFETs: A novel approach to steep and retrograde indium pocket profiles

Wang, H. C. H., Wang, C. C., Hsieh, C. H., Lu, S. Y., Chiang, M. C., Chu, Y. L., Chen, C. J., Ong, T. C., Wang, T-H., Griffin, P. B. & Diaz, C. H., 1 Dec 2001, In : Technical Digest - International Electron Devices Meeting. p. 63-66 4 p.

Research output: Contribution to journalConference article

1 Scopus citations

Data retention behavior of a SONOS type two-bit storage flash memory cell

Tsai, W. J., Zous, N. K., Liu, C. J., Liu, C. C., Chen, C. H., Wang, T-H., Pan, S., Lu, C. Y. & Gu, S. H., 1 Dec 2001, In : Technical Digest - International Electron Devices Meeting. p. 719-722 4 p.

Research output: Contribution to journalConference article

78 Scopus citations

Low temperature epitaxial growth of PZT on conductive perovskite LaNiO 3 electrode for embedded capacitor-over-interconnect (COI) FeRAM application

Lung, S. L., Liu, C. L., Chen, S. S., Lai, S. C., Tsai, C. W., Sheng, T. T., Wang, T-H., Pan, S., Wu, T. B. & Liu, R., 1 Dec 2001, In : Technical Digest - International Electron Devices Meeting. p. 275-278 4 p.

Research output: Contribution to journalConference article

7 Scopus citations
2000

Picosecond imaging of hot electron emission from CMOS circuitry

Ramanujachar, K., Landheer, D., Raymond, S., Charbonneau, S., Coleridge, P. & Wang, T-H., 1 Jan 2000, In : Proceedings of SPIE - The International Society for Optical Engineering. 4078, p. 298-303 6 p.

Research output: Contribution to journalConference article

Valence-band tunneling enhanced hot carrier degradation in ultra-thin oxide nMOSFETs

Tsai, C. W., Gu, S. H., Chiang, L. P., Wang, T-H., Liu, Y. C., Huang, L. S., Wang, M. C. & Hsia, L. C., 1 Dec 2000, In : Technical Digest - International Electron Devices Meeting. p. 139-141 3 p.

Research output: Contribution to journalConference article

11 Scopus citations
1999

Edge FN stress induced leakage current in tunnel oxides

Zous, N. K., Yeh, C. C., Tsai, C. W., Chiang, L. P. & Wang, T-H., 1 Jan 1999, In : International Symposium on VLSI Technology, Systems, and Applications, Proceedings. p. 262-265 4 p.

Research output: Contribution to journalConference article

1 Scopus citations
1998

Voltage scaling and temperature effects on drain leakage current degradation in a hot carrier stressed n-MOSFET

Wang, T-H., Hsu, C. F., Chiang, L. P., Zous, N. K., Chao, T-S. & Chang, C. Y., 1 Jan 1998, In : Annual Proceedings - Reliability Physics (Symposium). p. 209-213 5 p.

Research output: Contribution to journalConference article

3 Scopus citations
1997

Characterization of various stress-induced oxide traps in MOSFET's by using a novel transient current technique

Wang, T-H., Chiang, L. P., Zous, N. K., Chang, T. E. & Huang, C., 1 Dec 1997, In : Technical Digest - International Electron Devices Meeting, IEDM. p. 89-92 4 p.

Research output: Contribution to journalConference article

4 Scopus citations

Investigation of oxide charge trapping and detrapping in a n-MOSFET

Wang, T-H., Chang, T. E., Chiang, L. P., Zous, N. K. & Huang, C., 1 Jan 1997, In : Annual Proceedings - Reliability Physics (Symposium). p. 164-169 6 p.

Research output: Contribution to journalConference article

3 Scopus citations

New technique to measure an oxide trap density in a hot carrier stressed n-MOSFET

Wang, T-H., Chiang, L. P., Chang, T. E., Zous, N. K., Shen, K. Y. & Huang, C., 1 Jan 1997, In : Annual Proceedings - Reliability Physics (Symposium). p. 292-295 4 p.

Research output: Contribution to journalConference article

1996

Field enhanced oxide charge detrapping in n-MOSFET's

Wang, T-H., Chang, T. E., Chiang, L. P. & Huang, C., 1 Jan 1996, In : Annual Proceedings - Reliability Physics (Symposium). p. 122-125 4 p.

Research output: Contribution to journalConference article

4 Scopus citations

Mechanisms and characteristics of oxide charge detrapping in n-MOSFET's

Wang, T-H., Chang, T. E., Chiang, L. P., Huang, C. & Guo, J-C., 1 Jan 1996, In : Digest of Technical Papers - Symposium on VLSI Technology. p. 232-233 2 p.

Research output: Contribution to journalConference article

3 Scopus citations
1995

Characterization and simulation of hot carrier effect on erasing gate current in flash EEPROM's

Huang, C., Wang, T-H., Chen, T., Peng, N. C., Chang, A. & Shone, F. C., 1 Jan 1995, In : Annual Proceedings - Reliability Physics (Symposium). p. 61-64 4 p.

Research output: Contribution to journalConference article

10 Scopus citations
1994

Interface trap induced thermionic and field emission current in off-state MOSFET's

Wang, T-H., Chang, T. E. & Huang, C., 1 Dec 1994, In : Technical Digest - International Electron Devices Meeting. p. 161-164 4 p.

Research output: Contribution to journalConference article

20 Scopus citations
1991