1982 …2020

Research output per year

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Article
2020

Analytical Modeling of Read-Induced SET-State Conductance Change in a Hafnium-Oxide Resistive Switching Device

Su, P. C., Jiang, C. M., Chen, Y. J., Wang, C. C., Li, K. S., Lin, C. C. & Wang, T., Jan 2020, In : IEEE Transactions on Electron Devices. 67, 1, p. 113-117 5 p., 8935500.

Research output: Contribution to journalArticle

2019

Investigation of Electron and Hole Lateral Migration in Silicon Nitride and Data Pattern Effects on Vt Retention Loss in a Multilevel Charge Trap Flash Memory

Liu, Y. H., Zhan, T. C., Wang, T., Tsai, W. J., Lu, T. C., Chen, K. C. & Lu, C. Y., Dec 2019, In : IEEE Transactions on Electron Devices. 66, 12, p. 5155-5161 7 p., 8895844.

Research output: Contribution to journalArticle

2018

Modeling of Read-Disturb-Induced SET-State Current Degradation in a Tungsten Oxide Resistive Switching Memory

Su, P. C., Jiang, C. M., Wang, C. W. & Wang, T-H., 1 Nov 2018, In : IEEE Electron Device Letters. 39, 11, p. 1648-1651 4 p., 8454433.

Research output: Contribution to journalArticle

1 Scopus citations
2017

Characterization and modeling of SET/RESET cycling induced read-disturb failure time degradation in a resistive switching memory

Su, P. C., Hsu, C. C., Du, S. I. & Wang, T-H., 7 Dec 2017, In : Journal of Applied Physics. 122, 21, 215702.

Research output: Contribution to journalArticle

3 Scopus citations

Characterization of nitride hole lateral transport in a charge trap flash memory by using a random telegraph signal method

Liu, Y. H., Jiang, C. M., Lin, H. Y., Wang, T-H., Tsai, W. J., Lu, T. C., Chen, K. C. & Lu, C. Y., 17 Jul 2017, In : Applied Physics Letters. 111, 3, 033501.

Research output: Contribution to journalArticle

2 Scopus citations

Electric field induced nitride trapped charge lateral migration in a SONOS flash memory

Liu, Y. H., Jiang, C. M., Chen, W. C., Wang, T-H., Tsai, W. J., Lu, T. C., Chen, K. C. & Lu, C. Y., 1 Jan 2017, In : IEEE Electron Device Letters. 38, 1, p. 48-51 4 p., 7762773.

Research output: Contribution to journalArticle

10 Scopus citations
2016

Poly-silicon trap position and pass voltage effects on RTN amplitude in a vertical NAND flash cell string

Chou, Y. L., Wang, T-H., Lin, M., Chang, Y. W., Liu, L., Huang, S. W., Tsai, W. J., Lu, T. C., Chen, K. C. & Lu, C. Y., 1 Aug 2016, In : IEEE Electron Device Letters. 37, 8, p. 998-1001 4 p., 7501605.

Research output: Contribution to journalArticle

9 Scopus citations

SET/RESET Cycling-Induced Trap Creation and SET-Disturb Failure Time Degradation in a Resistive-Switching Memory

Chung, Y. T., Su, P. C., Lin, W. J., Chen, M. C. & Wang, T-H., 1 Jun 2016, In : IEEE Transactions on Electron Devices. 63, 6, p. 2367-2373 7 p., 7467500.

Research output: Contribution to journalArticle

8 Scopus citations
2015

Cycling-induced SET-disturb failure time degradation in a resistive switching memory

Chung, Y. T., Su, P. C., Cheng, Y. H., Wang, T-H., Chen, M. C. & Lu, C. Y., 1 Feb 2015, In : IEEE Electron Device Letters. 36, 2, p. 135-137 3 p., 6994811.

Research output: Contribution to journalArticle

3 Scopus citations
2013

Statistical Characterization and Modeling of the Temporal Evolutions of \Delta V\rm t Distribution in NBTI Recovery in Nanometer MOSFETs

Chiu, J. P., Liu, Y. H., Hsieh, H. D., Li, C. W., Chen, M. C. & Wang, T-H., 12 Feb 2013, In : IEEE Transactions on Electron Devices. 60, 3, p. 978-984 7 p., 6458996.

Research output: Contribution to journalArticle

11 Scopus citations
2012

A comparative study of NBTI and RTN amplitude distributions in high-κ gate dielectric pMOSFETs

Chiu, J. P., Chung, Y. T., Wang, T-H., Chen, M. C., Lu, C. Y. & Yu, K. F., 1 Feb 2012, In : IEEE Electron Device Letters. 33, 2, p. 176-178 3 p., 6112787.

Research output: Contribution to journalArticle

10 Scopus citations

Characterization and modeling of trap number and creation time distributions under negative-bias-temperature stress

Chiu, J. P., Li, C. W. & Wang, T-H., 20 Aug 2012, In : Applied Physics Letters. 101, 8, 082906.

Research output: Contribution to journalArticle

4 Scopus citations

Random Telegraph noise in 1X-nm CMOS silicide contacts and a method to extract trap density

Chen, M. C., Lin, C. Y., Chen, B. Y., Lin, C. H., Huang, G. W., Ho, C. H., Wang, T-H., Hu, C-M. & Yang, F. L., 1 Apr 2012, In : IEEE Electron Device Letters. 33, 4, p. 591-593 3 p., 6151006.

Research output: Contribution to journalArticle

2 Scopus citations

V t retention distribution tail in a multitime-program MLC SONOS memory due to a random-program-charge-induced current-path percolation effect

Chung, Y. T., Huang, T. I., Li, C. W., Chou, Y. L., Chiu, J. P., Wang, T-H., Lee, M. Y., Chen, K. C. & Lu, C. Y., 1 May 2012, In : IEEE Transactions on Electron Devices. 59, 5, p. 1371-1376 6 p., 6175940.

Research output: Contribution to journalArticle

2 Scopus citations
2011

A novel random telegraph signal method to study program/erase charge lateral spread and retention loss in a SONOS flash memory

Ma, H. C., Chou, Y. L., Chiu, J. P., Chung, Y. T., Lin, T. Y., Wang, T-H., Chao, Y. P., Chen, K. C. & Lu, C. Y., 1 Mar 2011, In : IEEE Transactions on Electron Devices. 58, 3, p. 623-630 8 p., 5680603.

Research output: Contribution to journalArticle

19 Scopus citations

Variations of Vt retention loss in a SONOS flash memory due to a current-path percolation effect

Chou, Y. L., Chung, Y. T., Wang, T-H., Ku, S. H., Zou, N. K., Chen, V., Lu, W. P., Chen, K. C. & Lu, C. Y., 1 Apr 2011, In : IEEE Electron Device Letters. 32, 4, p. 458-460 3 p., 5723684.

Research output: Contribution to journalArticle

1 Scopus citations
2010
1 Scopus citations
2009

A novel hot-electron programming method in a buried diffusion bit-line SONOS memory by utilizing nonequilibrium charge transport

Wang, T-H., Tang, C. J., Li, C. W., Lee, C. H., Ou, T. F., Chang, Y. W., Tsai, W. J., Lu, T. C., Chen, K. C. & Lu, C. Y., 1 Jan 2009, In : IEEE Electron Device Letters. 30, 2, p. 165-167 3 p.

Research output: Contribution to journalArticle

1 Scopus citations

Program trapped-charge effect on random telegraph-noise amplitude in a planar SONOS flash memory cell

Ma, H. C., Chou, Y. L., Chiu, J. P., Wang, T-H., Ku, S. H., Zou, N. K., Chen, V., Lu, W. P., Chen, K. C. & Lu, C. Y., 9 Oct 2009, In : IEEE Electron Device Letters. 30, 11, p. 1188-1190 3 p.

Research output: Contribution to journalArticle

5 Scopus citations
5 Scopus citations
2008

Charge retention loss in a HfO2 dot flash memory via thermally assisted tunneling

Wang, T-H., Ma, H. C., Li, C. H., Lin, M., Chien, C-H. & Lei, T. F., 1 Jan 2008, In : IEEE Electron Device Letters. 29, 1, p. 109-110 2 p.

Research output: Contribution to journalArticle

4 Scopus citations

Effects of length scaling on electromigration in dual-damascene copper interconnects

Lin, M. H., Lin, M. T. & Wang, T-H., 1 Apr 2008, In : Microelectronics Reliability. 48, 4, p. 569-577 9 p.

Research output: Contribution to journalArticle

15 Scopus citations
2007

Bipolar charge trapping induced anomalous negative bias-temperature instability in HfSiON gate dielectric pMOSFETs

Tang, C. J., Ma, H. C., Wang, T-H., Chan, C. T. & Chang, C. S., 1 Dec 2007, In : IEEE Transactions on Device and Materials Reliability. 7, 4, p. 518-523 6 p.

Research output: Contribution to journalArticle

2 Scopus citations

Effects of width scaling and layout variation on dual damascene copper interconnect electromigration

Lin, M. H., Chang, K. P., Su, K. C. & Wang, T-H., 1 Dec 2007, In : Microelectronics Reliability. 47, 12, p. 2100-2108 9 p.

Research output: Contribution to journalArticle

23 Scopus citations

Negative and positive electroluminescence from a compensated p -type germanium in terahertz frequencies

Chung, P. K., Lin, J. M., Yen, S. T. & Wang, T. H., 20 Dec 2007, In : Applied Physics Letters. 91, 24, 241106.

Research output: Contribution to journalArticle

1 Scopus citations

Numerical simulation of bottom oxide thickness effect on charge retention in SONOS flash memory cells

Gu, S. H., Hsu, C. W., Wang, T-H., Lu, W. P., Ku, Y. H. J. & Lu, C. Y., 1 Jan 2007, In : IEEE Transactions on Electron Devices. 54, 1, p. 90-97 8 p.

Research output: Contribution to journalArticle

53 Scopus citations

Profiling of nitride-trap-energy distribution in SONOS flash memory by using a variable-amplitude low-frequency charge-pumping technique

Liao, Y. Y., Horng, S. F., Chang, Y. W., Lu, T. C., Chen, K. C., Wang, T-H. & Lu, C. Y., 1 Dec 2007, In : IEEE Electron Device Letters. 28, 9, p. 828-830 3 p.

Research output: Contribution to journalArticle

12 Scopus citations
2006

A novel operation method to avoid overerasure in a scaled trapping-nitride localized charge storage flash memory cell and its application for multi-level programming

Tsai, W. J., Zous, N. K., Wang, T-H., Ku, Y. H. J. & Lu, C. Y., 1 Apr 2006, In : IEEE Transactions on Electron Devices. 53, 4, p. 808-814 7 p.

Research output: Contribution to journalArticle

7 Scopus citations

A Novel transient characterization technique to investigate trap properties in HfSiON gate dielectric MOSFETs - From single electron emission to PBTI recovery transient

Wang, T-H., Chan, C. T., Tang, C. J., Tsai, C. W., Wang, H. C. H., Chi, M. H. & Tang, D. D., 1 May 2006, In : IEEE Transactions on Electron Devices. 53, 5, p. 1073-1079 7 p.

Research output: Contribution to journalArticle

42 Scopus citations

Characteristics and physical mechanisms of positive bias and temperature stress-induced drain current degradation in HfSiON nMOSFETs

Chan, C. T., Tang, C. J., Wang, T-H., Wang, H. C. H. & Tang, D. D., 1 Jun 2006, In : IEEE Transactions on Electron Devices. 53, 6, p. 1340-1346 7 p.

Research output: Contribution to journalArticle

8 Scopus citations

Characterization of programmed charge lateral distribution in a two-bit storage nitride flash memory cell by using a charge-pumping technique

Gu, S. H., Wang, T-H., Lu, W. P., Ting, W., Ku, Y. H. J. & Lu, C. Y., 1 Jan 2006, In : IEEE Transactions on Electron Devices. 53, 1, p. 103-107 5 p.

Research output: Contribution to journalArticle

7 Scopus citations

Copper interconnect electromigration behavior in various structures and precise bimodal fitting

Lin, M. H., Lin, Y. L., Chang, K. P., Su, K. C. & Wang, T-H., 8 Feb 2006, In : Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 45, 2 A, p. 700-709 10 p.

Research output: Contribution to journalArticle

19 Scopus citations

Extraction of nitride trap density from stress induced leakage current in silicon-oxide-nitride-oxide-silicon flash memory

Gu, S. H., Wang, T-H., Lu, W. P., Ku, Y. H. J. & Lu, C. Y., 25 Oct 2006, In : Applied Physics Letters. 89, 16, 163514.

Research output: Contribution to journalArticle

24 Scopus citations

Physics and characterization of various hot-carrier degradation modes in LDMOS by using a three-region charge-pumping technique

Cheng, C. C., Lin, J. F., Wang, T-H., Hsieh, T. H., Tzeng, J. T., Jong, Y. C., Liou, R. S., Pan, S. C. & Hsu, S. L., 1 Sep 2006, In : IEEE Transactions on Device and Materials Reliability. 6, 3, p. 358-362 5 p., 1717483.

Research output: Contribution to journalArticle

31 Scopus citations
2005

A novel fully CMOS process compatible PREM for SOC applications

Yeh, C. C., Wang, T-H., Tsai, W. J., Lu, T. C., Liao, Y. Y., Zous, N. K., Chin, C. Y., Chen, Y. R., Chen, M. S., Ting, W. C. & Lu, C. Y., 1 Mar 2005, In : IEEE Electron Device Letters. 26, 3, p. 203-204 2 p.

Research output: Contribution to journalArticle

2 Scopus citations

A novel PHINES flash memory cell with low power program/erase, small pitch, two-bits-per-cell for data storage applications

Yeh, C. C., Wang, T-H., Tsai, W. J., Lu, T. C., Chen, M. S., Liao, Y. Y., Ting, W., Ku, Y. H. J. & Lu, C. Y., 1 Apr 2005, In : IEEE Transactions on Electron Devices. 52, 4, p. 541-546 6 p.

Research output: Contribution to journalArticle

5 Scopus citations

Copper interconnect electromigration behaviors in various structures and lifetime improvement by cap/dielectric interface treatment

Lin, M. H., Lin, Y. L., Chang, K. P., Su, K. C. & Wang, T-H., 1 Jul 2005, In : Microelectronics Reliability. 45, 7-8, p. 1061-1078 18 p.

Research output: Contribution to journalArticle

16 Scopus citations

Electromigration lifetime improvement of copper interconnect by cap/dielectric interface treatment and geometrical design

Lin, M. H., Lin, Y. L., Chen, J. M., Yeh, M. S., Chang, K. P., Su, K. C. & Wang, T-H., 1 Dec 2005, In : IEEE Transactions on Electron Devices. 52, 12, p. 2602-2608 7 p.

Research output: Contribution to journalArticle

27 Scopus citations

Excess low-frequency noise in ultrathin oxide n-MOSFETs arising from valence-band electron tunneling

Wu, J. W., You, J. W., Ma, H. C., Cheng, C. C., Hsu, C. F., Chang, C. S., Huang, G. W. & Wang, T-H., 1 Sep 2005, In : IEEE Transactions on Electron Devices. 52, 9, p. 2061-2066 6 p.

Research output: Contribution to journalArticle

12 Scopus citations

Mechanism for slow switching effect in advanced low-voltage, high-speed Pb(Zr1-xTix)O3 ferroelectric memory

Tsai, C. W., Lai, S. C., Yen, C. T., Lien, H. M., Lung, H. L., Wu, T. B., Wang, T-H., Liu, R. & Lu, C. Y., 1 Jun 2005, In : IEEE Transactions on Device and Materials Reliability. 5, 2, p. 217-223 7 p.

Research output: Contribution to journalArticle

1 Scopus citations

Substrate-bias-dependent dielectric breakdown in ultrathin-oxide p-metal-oxide-semiconductor field-effect transistors

Chiang, S., Lu, M. F., Huang-Lu, S., Chien, S. C. & Wang, T-H., 15 Jul 2005, In : Journal of Applied Physics. 98, 2, 024105.

Research output: Contribution to journalArticle

2004

An endurance evaluation method for flash EEPROM

Zous, N. K., Chen, Y. J., Chin, C. Y., Tsai, W. J., Lu, T. C., Chen, M. S., Lu, W. P., Wang, T-H., Pan, S. C. & Lu, C. Y., 1 May 2004, In : IEEE Transactions on Electron Devices. 51, 5, p. 720-725 6 p.

Research output: Contribution to journalArticle

6 Scopus citations

A novel erase scheme to suppress overerasure in a scaled 2-bit nitride storage flash memory cell

Yeh, C. C., Wang, T-H., Tsai, W. J., Lu, T. C., Liao, Y. Y., Chen, H. Y., Zous, N. K., Ting, W., Ku, J. & Lu, C. Y., 1 Sep 2004, In : IEEE Electron Device Letters. 25, 9, p. 643-645 3 p.

Research output: Contribution to journalArticle

7 Scopus citations

Comparison of oxide breakdown progression in ultra-thin oxide silicon-on-insulator and bulk metal-oxide-semiconductor field effect transistors

Chen, M. C., Ku, S. H., Chan, C. T. & Wang, T-H., 15 Sep 2004, In : Journal of Applied Physics. 96, 6, p. 3473-3477 5 p.

Research output: Contribution to journalArticle

Effects of Process and Gate Doping Species on Negative-Bias-Temperature Instability of p-Channel MOSFETs

Lee, D. Y., Huang, T. Y., Lin, H-C., Chiang, W. J., Huang, G. W. & Wang, T-H., 4 Mar 2004, In : Journal of the Electrochemical Society. 151, 2

Research output: Contribution to journalArticle

2 Scopus citations

Lateral migration of trapped holes in a nitride storage flash memory cell and its qualification methodology

Zous, N. K., Lee, M. Y., Tsai, W. J., Kuo, A., Huang, L. T., Lu, T. C., Liu, C. J., Wang, T-H., Lu, W. P., Ting, W., Ku, J. & Lu, C. Y., 1 Jan 2004, In : IEEE Electron Device Letters. 25, 9, p. 649-651 3 p.

Research output: Contribution to journalArticle

15 Scopus citations

Pocket implantation effect on drain current flicker noise in analog nMOSFET devices

Wu, J. W., Cheng, C. C., Chiu, K. L., Guo, J-C., Lien, W. Y., Chang, C. S., Huang, G. W. & Wang, T-H., 1 Aug 2004, In : IEEE Transactions on Electron Devices. 51, 8, p. 1262-1266 5 p.

Research output: Contribution to journalArticle

27 Scopus citations

Positive Oxide Charge-Enhanced Read Disturb in a Localized Trapping Storage Flash Memory Cell

Tsai, W. J., Yeh, C. C., Zous, N. K., Liu, C. C., Cho, S. K., Wang, T-H., Pan, S. C. & Lu, C. Y., 1 Mar 2004, In : IEEE Transactions on Electron Devices. 51, 3, p. 434-439 6 p.

Research output: Contribution to journalArticle

14 Scopus citations

Soft breakdown enhanced hysteresis effects in ultrathin oxide silicon-on-insulator metal-oxide-semiconductor field effect transistors

Chen, M. C., Ku, S. H., Chan, C. T. & Wang, T-H., 15 Aug 2004, In : Journal of Applied Physics. 96, 4, p. 2297-2300 4 p.

Research output: Contribution to journalArticle

4 Scopus citations