1982 …2020

Research output per year

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Research Output

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Conference contribution
2019

Analysis and Realization of TLC or even QLC Operation with a High Performance Multi-times Verify Scheme in 3D NAND Flash memory

Lu, C. C., Cheng, C. C., Chiu, H. P., Lin, W. L., Chen, T. W., Ku, S. H., Tsai, W. J., Lu, T. C., Chen, K. C., Wang, T-H. & Lu, C. Y., 16 Jan 2019, 2018 IEEE International Electron Devices Meeting, IEDM 2018. Institute of Electrical and Electronics Engineers Inc., p. 2.2.1-2.2.4 8614548. (Technical Digest - International Electron Devices Meeting, IEDM; vol. 2018-December).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations
2018

Chip-level characterization and RTN-induced error mitigation beyond 20nm floating gate flash memory

Lin, T. W., Ku, S. H., Cheng, C. H., Lee, C. W., Ijen-Huang, Tsai, W. J., Lu, T. C., Lu, W. P., Chen, K. C., Wang, T-H. & Lu, C. Y., 25 May 2018, 2018 IEEE International Reliability Physics Symposium, IRPS 2018. Institute of Electrical and Electronics Engineers Inc., p. PMY.61-PMY.65 (IEEE International Reliability Physics Symposium Proceedings; vol. 2018-March).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Correlation between SET-state current level and read-disturb failure time in a resistive switching memory

Su, P. C., Jiang, C. M., Wang, C. W. & Wang, T-H., 25 May 2018, 2018 IEEE International Reliability Physics Symposium, IRPS 2018. Institute of Electrical and Electronics Engineers Inc., p. PMY.11-PMY.15 (IEEE International Reliability Physics Symposium Proceedings; vol. 2018-March).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Error Characterization and ECC Usage Relaxation beyond 20nm Floating Gate NAND Flash Memory

Ku, S. H., Lin, T. W., Cheng, C. H., Lee, C. W., Chen, T. W., Tsai, W. J., Lu, T. C., Lu, W. P., Chen, K. C., Wang, T-H. & Lu, C. Y., 19 Jun 2018, 2018 IEEE 10th International Memory Workshop, IMW 2018. Institute of Electrical and Electronics Engineers Inc., p. 1-4 4 p. (2018 IEEE 10th International Memory Workshop, IMW 2018).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Investigation of data pattern effects on nitride charge lateral migration in a charge trap flash memory by using a random telegraph signal method

Liu, Y. H., Lin, H. Y., Jiang, C. M., Wang, T-H., Tsai, W. J., Lu, T. C., Chen, K. C. & Lu, C. Y., 25 May 2018, 2018 IEEE International Reliability Physics Symposium, IRPS 2018. Institute of Electrical and Electronics Engineers Inc., p. 6D.11-6D.15 (IEEE International Reliability Physics Symposium Proceedings; vol. 2018-March).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

RTN modulation by neighboring word-line Vt level in 1Xnm floating gate NAND strings

Cheng, C. C., Chen, Y. H., Wang, C. P., Cheng, C. H., Lee, C. W., Lin, T. W., Ku, S. H., Chang, Y. W., Tsai, W. J., Lu, T. C., Chen, K. C., Wang, T-H. & Lu, C. Y., 3 Jul 2018, 2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018. Institute of Electrical and Electronics Engineers Inc., p. 1-2 2 p. (2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2017

A numerical study of Si-TMD contact with n/p type operation and interface barrier reduction for sub-5 nm monolayer MoS2 FET

Tang, Y. T., Li, K. S., Li, L. J., Li, M. Y., Lin, C. H., Chen, Y. J., Chen, C. C., Su, C. J., Wu, B. W., Wu, C. S., Chen, M. C., Shieh, J. M., Yeh, W. K., Su, P. C., Wang, T-H., Yang, F. L. & Hu, C-M., 31 Jan 2017, 2016 IEEE International Electron Devices Meeting, IEDM 2016. Institute of Electrical and Electronics Engineers Inc., p. 14.3.1-14.3.4 7838415. (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Polycrystalline-silicon channel trap induced transient read instability in a 3D NAND flash cell string

Tsai, W. J., Lin, W. L., Cheng, C. C., Ku, S. H., Chou, Y. L., Liu, L., Hwang, S. W., Lu, T. C., Chen, K. C., Wang, T-H. & Lu, C. Y., 31 Jan 2017, 2016 IEEE International Electron Devices Meeting, IEDM 2016. Institute of Electrical and Electronics Engineers Inc., p. 11.3.1-11.3.4 7838395. (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

11 Scopus citations
2016

Investigation of Factors Affecting SET-Disturb Failure Time in a Resistive Switching Memory

Su, P. C., Chung, Y. T., Chen, M. C. & Wang, T-H., 15 Jun 2016, 2016 IEEE 8th International Memory Workshop, IMW 2016. Institute of Electrical and Electronics Engineers Inc., 7495281. (2016 IEEE 8th International Memory Workshop, IMW 2016).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations
2015

Hybrid Si/TMD 2D electronic double channels fabricated using solid CVD few-layer-MoS2 stacking for Vth matching and CMOS-compatible 3DFETs

Chen, M. C., Lin, C. Y., Li, K. H., Li, L. J., Chen, C. H., Chuang, C. H., Lee, M. D., Chen, Y. J., Hou, Y. F., Lin, C. H., Chen, C. C., Wu, B. W., Wu, C. S., Yang, I., Lee, Y. J., Yeh, W. K., Wang, T-H., Yang, F. L. & Hu, C-M., 20 Feb 2015, 2014 IEEE International Electron Devices Meeting, IEDM 2014. February ed. Institute of Electrical and Electronics Engineers Inc., Vol. 2015-February. p. 33.5.1-33.5.4 7047163. (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Scopus citations

TMD FinFET with 4 nm thin body and back gate control for future low power technology

Chen, M. C., Li, K. S., Li, L. J., Lu, A. Y., Li, M. Y., Chang, Y. H., Lin, C. H., Chen, Y. J., Hou, Y. F., Chen, C. C., Wu, B. W., Wu, C. S., Yang, I., Lee, Y. J., Shieh, J. M., Yeh, W. K., Shih, J. H., Su, P. C., Sachid, A. B., Wang, T-H. & 2 others, Yang, F. L. & Hu, C-M., 16 Feb 2015, 2015 IEEE International Electron Devices Meeting, IEDM 2015. Institute of Electrical and Electronics Engineers Inc., p. 32.2.1-32.2.4 7409813. (Technical Digest - International Electron Devices Meeting, IEDM; vol. 2016-February).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

17 Scopus citations
2014

Investigation of random telegraph noise amplitudes in hafnium oxide resistive memory devices

Chung, Y. T., Liu, Y. H., Su, P. C., Cheng, Y. H., Wang, T-H. & Chen, M. C., 1 Jan 2014, 2014 IEEE International Reliability Physics Symposium, IRPS 2014. Institute of Electrical and Electronics Engineers Inc., 6861157. (IEEE International Reliability Physics Symposium Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Scopus citations
2013

A 10 nm Si-based bulk FinFETs 6T SRAM with multiple fin heights technology for 25% better static noise margin

Chen, M. C., Lin, C. H., Hou, Y. F., Chen, Y. J., Lin, C. Y., Hsueh, F. K., Liu, H. L., Liu, C. T., Wang, B. W., Chen, H. C., Chen, C. C., Chen, S. H., Wu, C. T., Lai, T. Y., Lee, M. Y., Wu, B. W., Wu, C. S., Yang, I., Hsieh, Y. P., Ho, C. & 4 others, Wang, T-H., Sachid, A. B., Hu, C-M. & Yang, F. L., 17 Sep 2013, 2013 Symposium on VLSI Circuits, VLSIC 2013 - Digest of Technical Papers. 6578756. (IEEE Symposium on VLSI Circuits, Digest of Technical Papers).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Scopus citations

A 10 nm Si-based bulk FinFETs 6T SRAM with multiple fin heights technology for 25% better static noise margin

Chen, M. C., Lin, C. H., Hou, Y. F., Chen, Y. J., Lin, C. Y., Hsueh, F. K., Liu, H. L., Liu, C. T., Wang, B. W., Chen, H. C., Chen, C. C., Chen, S. H., Wu, C. T., Lai, T. Y., Lee, M. Y., Wu, B. W., Wu, C. S., Yang, I., Hsieh, Y. P., Ho, C. & 4 others, Wang, T-H., Sachid, A. B., Hu, C-M. & Yang, F. L., 9 Sep 2013, 2013 Symposium on VLSI Technology, VLSIT 2013 - Digest of Technical Papers. 6576630. (Digest of Technical Papers - Symposium on VLSI Technology).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Scopus citations

Estimating the detection stability of a Si nanowire sensor using an additional charging electrode

Chen, M. C., Chen, H. C., Lee, T. H., Lin, Y. H., Shih, J. H., Wang, B. W., Hou, Y. F., Chen, Y. J., Lin, C. Y., Lin, C. H., Hsieh, Y. P., Ho, C. H., Hua, M. Y., Qiu, J. T., Wang, T-H. & Yang, F. L., 7 Aug 2013, 2013 IEEE International Reliability Physics Symposium, IRPS 2013. 6532089. (IEEE International Reliability Physics Symposium Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2011

Characterization of junction dosage effect on NAND arrays with charge pumping method

Lee, C., Lee, C. H., Cheng, C. H., Chong, L. H., Chen, K. F., Chen, Y. J., Huang, J. S., Ku, S. H., Zous, N. K., Huang, I. J., Han, T. T., Chen, M. S., Lu, W. P., Chen, K. C., Wang, T-H. & Lu, C. Y., 11 Jul 2011, Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011. p. 150-151 2 p. 5872269. (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Junction optimization for reliability issues in floating gate NAND flash cells

Lee, C. H., Yang, I. C., Lee, C., Cheng, C. H., Chong, L. H., Chen, K. F., Huang, J. S., Ku, S. H., Zous, N. K., Huang, I. J., Han, T. T., Chen, M. S., Lu, W. P., Chen, K. C., Wang, T-H. & Lu, C. Y., 23 Jun 2011, 2011 International Reliability Physics Symposium, IRPS 2011. 5784549. (IEEE International Reliability Physics Symposium Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Scopus citations

Silicide barrier engineering induced random telegraph noise in 1Xnm CMOS contacts

Chen, M. C., Lin, C. Y., Chen, B. Y., Lin, C. H., Huang, G. W., Huang, C. C., Ho, C. H., Wang, T-H., Hu, C-M. & Yang, F. L., 1 Dec 2011, 2011 International Electron Devices Meeting, IEDM 2011. 6131626. (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations
2010

Gate stack etch induced reliability issues in nitrided-based trapping storage cells

Yeh, T. H., Lin, S. W., Chen, Y. J., Chen, K. F., Huang, J. S., Cheng, C. H., Chong, L. H., Ku, S. H., Zous, N. K., Huang, I. J., Han, T. T., Chen, M. S., Lu, W. P., Chen, K. C., Wang, T-H. & Lu, C. Y., 20 Oct 2010, Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010. p. 48-49 2 p. 5488953. (Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Use of random telegraph signal as internal probe to study program/erase charge lateral spread in a SONOS flash memory

Chou, Y. L., Chiu, J. P., Ma, H. C., Wang, T-H., Chao, Y. P., Chen, K. C. & Lu, C. Y., 20 Oct 2010, 2010 IEEE International Reliability Physics Symposium, IRPS 2010. p. 960-963 4 p. 5488696. (IEEE International Reliability Physics Symposium Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations
2009

Cell endurance prediction from a large-area SONOS capacitor

Lee, C. H., Tu, W. H., Gu, S. H., Wu, C. W., Lin, S. W., Yeh, T. H., Chen, K. F., Chen, Y. J., Hsieh, J. Y., Huang, I. J., Zous, N. K., Han, T. T., Chen, M. S., Lu, W. P., Chen, K. C., Wang, T-H. & Lu, C. Y., 12 Nov 2009, 2009 IEEE International Reliability Physics Symposium, IRPS 2009. p. 891-892 2 p. 5173373. (IEEE International Reliability Physics Symposium Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations

Investigation of post-NBT stress current instability modes in HfSiON gate dielectric pMOSFETs by measurement of individual trapped charge emissions

Ma, H. C., Chiu, J. P., Tang, C. J., Wang, T-H. & Chang, C. S., 12 Nov 2009, 2009 IEEE International Reliability Physics Symposium, IRPS 2009. p. 51-54 4 p. 5173223. (IEEE International Reliability Physics Symposium Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Overall operation considerations for a SONOS-based memory

Lee, C. H., Tu, W. H., Chong, L. H., Gu, S. H., Chen, K. F., Chen, Y. J., Hsieh, J. Y., Huang, I. J., Zous, N. K., Han, T. T., Chen, M. S., Lu, W. P., Chen, K. C., Wang, T-H. & Lu, C. Y., 1 Dec 2009, 2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09. p. 148-149 2 p. 5159334. (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Program charge effect on random telegraph noise amplitude and its device structural dependence in SONOS flash memory

Chiu, J. P., Chou, Y. L., Ma, H. C., Wang, T-H., Ku, S. H., Zou, N. K., Chen, V., Lu, W. P., Chen, K. C. & Lu, C. Y., 1 Dec 2009, 2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest. 5424210. (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations
2008

A Highly punchthrough-immune operation method for an ultra-short-channel hot-carrier-injection type non-volatile memory cell

Tsai, W. J., Ou, T. F., Huang, J. S., Cheng, C. H., Lu, C. Y., Wang, T-H., Chen, K. F., Han, T. T., Lu, T. C., Chen, K. C. & Lu, C. Y., 1 Dec 2008, 2008 IEEE International Electron Devices Meeting, IEDM 2008. 4796822. (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Numerical simulation of programming transient behavior in charge trapping storage memory

Lee, C. H., Wu, C. W., Lin, S. W., Yeh, T. H., Gu, S. H., Chen, K. F., Chen, Y. J., Hsieh, J. Y., Huang, I. J., Zous, N. K., Han, T. T., Chen, M. S., Lu, W. P., Wang, T-H. & Lu, C. Y., 1 Sep 2008, 2008 Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design, Proceedings, NVSMW/ICMTD. p. 109-110 2 p. 4531838. (2008 Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design, Proceedings, NVSMW/ICMTD).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Scopus citations
2007

Investigation of the strained PMOS on (110) substrate

Tang, C. J., Huang, S. H., Wang, T-H. & Chang, C. S., 26 Sep 2007, 2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA - Proceedings of Technical Papers. 4239497. (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations
2006

A novel non-volatile memory cell using a gated-diode structure with a trapping-nitride storage layer

Tsai, W. J., Ou, T. F., Kao, H. L., Lat, E. K., Liao, Y. Y., Yeh, C. C., Wang, T-H., Ku, J. & Lu, C. Y., 1 Dec 2006, 2006 Symposium on VLSI Technology, VLSIT - Digest of Technical Papers. p. 42-43 2 p. 1705207. (Digest of Technical Papers - Symposium on VLSI Technology).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Effects of width scaling, length scaling, and layout variation on electromigrationin in dual damascene copper interconnects

Lm, M. H., Chang, K. P., Su, K. C. & Wang, T-H., 1 Dec 2006, 2006 IEEE International Reliability Physics Symposium Proceedings, 44th Annual. p. 671-672 2 p. 4017258. (IEEE International Reliability Physics Symposium Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Highly scalable NAND-type PHINES flash memory for data flash applications

Yeh, C. C., Liao, Y. Y., Tsai, W. J., Lu, T. C., Ou, T. F., Kao, H. L., Wang, T-H., Ting, W. C., Ku, J. & Lu, C. Y., 21 Nov 2006, 21st IEEE Non-Volatile Semiconductor Memory Workshop 2006, NVSMW 2006. p. 76-77 2 p. 1629502. (21st IEEE Non-Volatile Semiconductor Memory Workshop 2006, NVSMW 2006; vol. 2006).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Insight of stress effect on the ONO stack layer in a SONOS-type flash memory cell

Yeh, C. C., Liao, Y. Y., Wang, T-H., Tsai, W. J., Lu, T. C., Kao, H. L., Ou, T. F., Chen, M. S., Chen, Y. J., Lai, E. K., Shih, Y. H., Ting, W. C., Ku, Y. H. J. & Lu, C. Y., 1 Dec 2006, 2006 IEEE International Reliability Physics Symposium Proceedings, 44th Annual. p. 691-692 2 p. 4017268. (IEEE International Reliability Physics Symposium Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Investigation of charge loss in cycled NBit cells via field and temperature accelerations

Tsai, W. J., Zous, N. K., Chen, H. Y., Liu, L., Yeh, C. C., Chen, S., Lu, W. P., Wang, T-H., Ku, J. & Lu, C. Y., 1 Dec 2006, 2006 IEEE International Reliability Physics Symposium Proceedings, 44th Annual. p. 693-694 2 p. 4017269. (IEEE International Reliability Physics Symposium Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Scopus citations

Investigation of hot carrier degradation modes in LDMOS by using a novel three-region charge pumping technique

Cheng, C. C., Tu, K. C., Wang, T-H., Hsieh, T. H., Tzeng, J. T., Jong, Y. C., Liou, R. S., Pan, S. C. & Hsu, S. L., 1 Dec 2006, 2006 IEEE International Reliability Physics Symposium Proceedings, 44th Annual. p. 334-337 4 p. 4017179. (IEEE International Reliability Physics Symposium Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

22 Scopus citations

Read current instability arising from random telegraph noise in localized storage, multi-level SONOS flash memory

Gu, S. H., Li, C. W., Wang, T-H., Lu, W. P., Chen, K. C., Ku, J. & Lu, C. Y., 1 Dec 2006, 2006 International Electron Devices Meeting Technical Digest, IEDM. 4154239. (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

14 Scopus citations
2005

A novel Silicon-Nitride based Light-Emitting Transistor (SiNLET): Optical/electrical properties of a SONOS-type three-terminal electroluminescence device for optical communication in ULSI

Yeh, C. C., Tsai, W. J., Lu, T. C., Chen, Y. R., Pan, F-M., Gu, S. H., Liao, Y. Y., Kao, H. L., Ou, T. F., Zous, N. K., Ting, W. C., Wang, T-H., Ku, J. & Lu, C. Y., 1 Dec 2005, IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest. p. 1013-1016 4 p. 1609535. (Technical Digest - International Electron Devices Meeting, IEDM; vol. 2005).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Channel soft breakdown enhanced excess low-frequency noise in ultra-thin gate oxide PD analog SOI devices

Chiang, S., Chen, M. C., Liao, W. S., You, J. W., Lu, M. F., Hsieh, Y. S., Lin, W. M., Huang-Lu, S., Shiau, W. T., Chien, S. C. & Wang, T-H., 15 Dec 2005, 2005 IEEE International Reliability Physics Symposium Proceedings, 43rd Annual. p. 698-699 2 p. (IEEE International Reliability Physics Symposium Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Low frequency noise degradation in ultra-thin oxide (15Å) analog n-MOSFETs resulting from valence-band tunneling

Wu, J. W., You, J. W., Ma, H. C., Cheng, C. C., Hsu, C. F., Huang, G. W., Chang, C. S. & Wang, T-H., 15 Dec 2005, 2005 IEEE International Reliability Physics Symposium Proceedings, 43rd Annual. p. 260-264 5 p. (IEEE International Reliability Physics Symposium Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Scopus citations

Positive bias and temperature stress induced two-stage drain current degradation in HfSiON nMOSFET's

Chan, C. T., Tang, C. J., Wang, T-H., Wang, H. C. H. & Tang, D. D., 1 Dec 2005, IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest. p. 563-566 4 p. 1609408. (Technical Digest - International Electron Devices Meeting, IEDM; vol. 2005).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations

Single-electron emission of traps in HfSiON as high-k gate dielectric for MOSFETs

Chan, C. T., Tang', C. J., Kuo, C. H., Ma, H. C., Tsai, C. W., Wang, H. C. H., Chi, M. H. & Wang, T-H., 15 Dec 2005, 2005 IEEE International Reliability Physics Symposium Proceedings, 43rd Annual. p. 41-44 4 p. (IEEE International Reliability Physics Symposium Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Scopus citations
2003

Impacts of HF etching on ultra-thin core gate oxide integrity in dual gate oxide CMOS technology

Lee, D. Y., Lin, H-C., Chen, C. L., Huang, T. Y., Wang, T-H., Lee, T. L., Chen, S. C. & Liang, M. S., 1 Jan 2003, 2003 8th International Symposium on Plasma- and Process-Induced Damage, P2ID 2003. Eriguchi, K., Krishnan, S. & Hook, T. (eds.). Institute of Electrical and Electronics Engineers Inc., p. 77-80 4 p. 1200921. (International Symposium on Plasma Process-Induced Damage, P2ID, Proceedings; vol. 2003-January).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations

Negative substrate bias enhanced breakdown hardness in ultra-thin oxide pMOSFETs

Wang, T-H., Tsai, C. W., Chen, M. C., Chan, C. T., Chiang, H. K., Lu, S. H., Hu, H. C., Chen, T. F., Yang, C. K., Lee, M. T., Wu, D. Y., Chen, J. K., Chien, S. C. & Sun, S. W., 21 Jul 2003, 2003 IEEE International Reliability Physics Symposium Proceedings, IRPS 2003 - 41st Annual. Institute of Electrical and Electronics Engineers Inc., p. 437-441 5 p. 1197787. (IEEE International Reliability Physics Symposium Proceedings; vol. 2003-January).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations
2002

A practical methodology for multi-modality electromigration lifetime prediction

Lin, M. H., Yang, G. S., Lin, Y. L., Lin, M. T., Lin, C. C., Yeh, M. S., Chang, K. P., Su, K. C., Chen, J. K., Chang, Y. J. & Wang, T-H., 1 Jan 2002, 2002 IEEE International Integrated Reliability Workshop Final Report, IRW 2002. Institute of Electrical and Electronics Engineers Inc., p. 50-54 5 p. 1194232. (IEEE International Integrated Reliability Workshop Final Report; vol. 2002-January).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Scopus citations

Cause of data retention loss in a nitride-based localized trapping storage flash memory cell

Tsai, W. J., Gu, S. H., Zous, N. K., Yeh, C. C., Liu, C. C., Chen, C. H., Wang, T-H., Pan, S. & Lu, C. Y., 1 Jan 2002, 2002 IEEE International Reliability Physics Symposium Proceedings, IRPS 2002 - 40th Annual. Institute of Electrical and Electronics Engineers Inc., p. 34-38 5 p. 996607. (IEEE International Reliability Physics Symposium Proceedings; vol. 2002-January).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

39 Scopus citations

Process and doping species dependence of negative-bias-temperature instability for P-channel MOSFETs

Lee, D. Y., Lin, H-C., Chiang, W. J., La, W. T., Nuang, G., Huang, T. Y. & Wang, T-H., 1 Jan 2002, 2002 7th International Symposium on Plasma- and Process-Induced Damage, P2ID 2002. Gabriel, C. T., Hook, T. & Eriguchi, K. (eds.). Institute of Electrical and Electronics Engineers Inc., p. 150-153 4 p. 1042631. (International Symposium on Plasma Process-Induced Damage, P2ID, Proceedings; vol. 2002-January).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Scopus citations

Soft breakdown enhanced hysteresis effects in ultra-thin oxide SOI nMOSFETs

Chen, M. C., Tsai, C. W., Gu, S. H., Wang, T-H., Lu, S. H., Lin, S. W., Yang, G. S., Chen, J. K., Chien, S. C., Loh, Y. T. & Liu, F. T., 1 Jan 2002, 2002 IEEE International Reliability Physics Symposium Proceedings, IRPS 2002 - 40th Annual. Institute of Electrical and Electronics Engineers Inc., p. 404-408 5 p. 996670. (IEEE International Reliability Physics Symposium Proceedings; vol. 2002-January).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations
1999

A comparative study of SILC transient characteristics and mechanisms in FN stressed and hot hole stressed tunnel oxides

Zous, N. K., Wang, T-H., Yeh, C. C., Tsai, C. W. & Huang, C., 1 Jan 1999, Annual Proceedings - Reliability Physics (Symposium). IEEE, p. 405-409 5 p. (Annual Proceedings - Reliability Physics (Symposium)).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Scopus citations
1994

Simulation of interface state generation effects in LDD MOSFET's

Wang, T-H., Huang, C., Chou, P. C. & Chung, S. S., 1 Jan 1994, 1994 International Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits, NUPAD 1994. Institute of Electrical and Electronics Engineers Inc., p. 23-26 4 p. 343499. (1994 International Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits, NUPAD 1994).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1993

Transient simulation of EPROM writing characteristics with a novel hot electron injection model

Huang, C. & Wang, T-H., 1 Jan 1993, 1993 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA 1993 - Proceedings of Technical Papers. Institute of Electrical and Electronics Engineers Inc., p. 124-127 4 p. 263642. (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1991

Mixed mode simulation of slow transient effects in AlGaAs/GaAs HEMT inverters

Wang, T-H. & Wu, S. J., 1 Dec 1991, Proceedings of the Custom Integrated Circuits Conference. Publ by IEEE, p. 51-54 (Proceedings of the Custom Integrated Circuits Conference).

Research output: Chapter in Book/Report/Conference proceedingConference contribution