1982 …2020

Research output per year

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Research Output

2020

Analytical Modeling of Read-Induced SET-State Conductance Change in a Hafnium-Oxide Resistive Switching Device

Su, P. C., Jiang, C. M., Chen, Y. J., Wang, C. C., Li, K. S., Lin, C. C. & Wang, T., Jan 2020, In : IEEE Transactions on Electron Devices. 67, 1, p. 113-117 5 p., 8935500.

Research output: Contribution to journalArticle

2019

Analysis and Realization of TLC or even QLC Operation with a High Performance Multi-times Verify Scheme in 3D NAND Flash memory

Lu, C. C., Cheng, C. C., Chiu, H. P., Lin, W. L., Chen, T. W., Ku, S. H., Tsai, W. J., Lu, T. C., Chen, K. C., Wang, T-H. & Lu, C. Y., 16 Jan 2019, 2018 IEEE International Electron Devices Meeting, IEDM 2018. Institute of Electrical and Electronics Engineers Inc., p. 2.2.1-2.2.4 8614548. (Technical Digest - International Electron Devices Meeting, IEDM; vol. 2018-December).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Investigation of Electron and Hole Lateral Migration in Silicon Nitride and Data Pattern Effects on Vt Retention Loss in a Multilevel Charge Trap Flash Memory

Liu, Y. H., Zhan, T. C., Wang, T., Tsai, W. J., Lu, T. C., Chen, K. C. & Lu, C. Y., Dec 2019, In : IEEE Transactions on Electron Devices. 66, 12, p. 5155-5161 7 p., 8895844.

Research output: Contribution to journalArticle

2018

Chip-level characterization and RTN-induced error mitigation beyond 20nm floating gate flash memory

Lin, T. W., Ku, S. H., Cheng, C. H., Lee, C. W., Ijen-Huang, Tsai, W. J., Lu, T. C., Lu, W. P., Chen, K. C., Wang, T-H. & Lu, C. Y., 25 May 2018, 2018 IEEE International Reliability Physics Symposium, IRPS 2018. Institute of Electrical and Electronics Engineers Inc., p. PMY.61-PMY.65 (IEEE International Reliability Physics Symposium Proceedings; vol. 2018-March).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Correlation between SET-state current level and read-disturb failure time in a resistive switching memory

Su, P. C., Jiang, C. M., Wang, C. W. & Wang, T-H., 25 May 2018, 2018 IEEE International Reliability Physics Symposium, IRPS 2018. Institute of Electrical and Electronics Engineers Inc., p. PMY.11-PMY.15 (IEEE International Reliability Physics Symposium Proceedings; vol. 2018-March).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Error Characterization and ECC Usage Relaxation beyond 20nm Floating Gate NAND Flash Memory

Ku, S. H., Lin, T. W., Cheng, C. H., Lee, C. W., Chen, T. W., Tsai, W. J., Lu, T. C., Lu, W. P., Chen, K. C., Wang, T-H. & Lu, C. Y., 19 Jun 2018, 2018 IEEE 10th International Memory Workshop, IMW 2018. Institute of Electrical and Electronics Engineers Inc., p. 1-4 4 p. (2018 IEEE 10th International Memory Workshop, IMW 2018).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Investigation of data pattern effects on nitride charge lateral migration in a charge trap flash memory by using a random telegraph signal method

Liu, Y. H., Lin, H. Y., Jiang, C. M., Wang, T-H., Tsai, W. J., Lu, T. C., Chen, K. C. & Lu, C. Y., 25 May 2018, 2018 IEEE International Reliability Physics Symposium, IRPS 2018. Institute of Electrical and Electronics Engineers Inc., p. 6D.11-6D.15 (IEEE International Reliability Physics Symposium Proceedings; vol. 2018-March).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Modeling of Read-Disturb-Induced SET-State Current Degradation in a Tungsten Oxide Resistive Switching Memory

Su, P. C., Jiang, C. M., Wang, C. W. & Wang, T-H., 1 Nov 2018, In : IEEE Electron Device Letters. 39, 11, p. 1648-1651 4 p., 8454433.

Research output: Contribution to journalArticle

1 Scopus citations

RTN modulation by neighboring word-line Vt level in 1Xnm floating gate NAND strings

Cheng, C. C., Chen, Y. H., Wang, C. P., Cheng, C. H., Lee, C. W., Lin, T. W., Ku, S. H., Chang, Y. W., Tsai, W. J., Lu, T. C., Chen, K. C., Wang, T-H. & Lu, C. Y., 3 Jul 2018, 2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018. Institute of Electrical and Electronics Engineers Inc., p. 1-2 2 p. (2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2017

A numerical study of Si-TMD contact with n/p type operation and interface barrier reduction for sub-5 nm monolayer MoS2 FET

Tang, Y. T., Li, K. S., Li, L. J., Li, M. Y., Lin, C. H., Chen, Y. J., Chen, C. C., Su, C. J., Wu, B. W., Wu, C. S., Chen, M. C., Shieh, J. M., Yeh, W. K., Su, P. C., Wang, T-H., Yang, F. L. & Hu, C-M., 31 Jan 2017, 2016 IEEE International Electron Devices Meeting, IEDM 2016. Institute of Electrical and Electronics Engineers Inc., p. 14.3.1-14.3.4 7838415. (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Characterization and modeling of SET/RESET cycling induced read-disturb failure time degradation in a resistive switching memory

Su, P. C., Hsu, C. C., Du, S. I. & Wang, T-H., 7 Dec 2017, In : Journal of Applied Physics. 122, 21, 215702.

Research output: Contribution to journalArticle

3 Scopus citations

Characterization of nitride hole lateral transport in a charge trap flash memory by using a random telegraph signal method

Liu, Y. H., Jiang, C. M., Lin, H. Y., Wang, T-H., Tsai, W. J., Lu, T. C., Chen, K. C. & Lu, C. Y., 17 Jul 2017, In : Applied Physics Letters. 111, 3, 033501.

Research output: Contribution to journalArticle

2 Scopus citations

Electric field induced nitride trapped charge lateral migration in a SONOS flash memory

Liu, Y. H., Jiang, C. M., Chen, W. C., Wang, T-H., Tsai, W. J., Lu, T. C., Chen, K. C. & Lu, C. Y., 1 Jan 2017, In : IEEE Electron Device Letters. 38, 1, p. 48-51 4 p., 7762773.

Research output: Contribution to journalArticle

10 Scopus citations

Polycrystalline-silicon channel trap induced transient read instability in a 3D NAND flash cell string

Tsai, W. J., Lin, W. L., Cheng, C. C., Ku, S. H., Chou, Y. L., Liu, L., Hwang, S. W., Lu, T. C., Chen, K. C., Wang, T-H. & Lu, C. Y., 31 Jan 2017, 2016 IEEE International Electron Devices Meeting, IEDM 2016. Institute of Electrical and Electronics Engineers Inc., p. 11.3.1-11.3.4 7838395. (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

11 Scopus citations
2016

Investigation of Factors Affecting SET-Disturb Failure Time in a Resistive Switching Memory

Su, P. C., Chung, Y. T., Chen, M. C. & Wang, T-H., 15 Jun 2016, 2016 IEEE 8th International Memory Workshop, IMW 2016. Institute of Electrical and Electronics Engineers Inc., 7495281. (2016 IEEE 8th International Memory Workshop, IMW 2016).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Poly-silicon trap position and pass voltage effects on RTN amplitude in a vertical NAND flash cell string

Chou, Y. L., Wang, T-H., Lin, M., Chang, Y. W., Liu, L., Huang, S. W., Tsai, W. J., Lu, T. C., Chen, K. C. & Lu, C. Y., 1 Aug 2016, In : IEEE Electron Device Letters. 37, 8, p. 998-1001 4 p., 7501605.

Research output: Contribution to journalArticle

9 Scopus citations

SET/RESET Cycling-Induced Trap Creation and SET-Disturb Failure Time Degradation in a Resistive-Switching Memory

Chung, Y. T., Su, P. C., Lin, W. J., Chen, M. C. & Wang, T-H., 1 Jun 2016, In : IEEE Transactions on Electron Devices. 63, 6, p. 2367-2373 7 p., 7467500.

Research output: Contribution to journalArticle

8 Scopus citations
2015

Cycling-induced SET-disturb failure time degradation in a resistive switching memory

Chung, Y. T., Su, P. C., Cheng, Y. H., Wang, T-H., Chen, M. C. & Lu, C. Y., 1 Feb 2015, In : IEEE Electron Device Letters. 36, 2, p. 135-137 3 p., 6994811.

Research output: Contribution to journalArticle

3 Scopus citations

Hybrid Si/TMD 2D electronic double channels fabricated using solid CVD few-layer-MoS2 stacking for Vth matching and CMOS-compatible 3DFETs

Chen, M. C., Lin, C. Y., Li, K. H., Li, L. J., Chen, C. H., Chuang, C. H., Lee, M. D., Chen, Y. J., Hou, Y. F., Lin, C. H., Chen, C. C., Wu, B. W., Wu, C. S., Yang, I., Lee, Y. J., Yeh, W. K., Wang, T-H., Yang, F. L. & Hu, C-M., 20 Feb 2015, 2014 IEEE International Electron Devices Meeting, IEDM 2014. February ed. Institute of Electrical and Electronics Engineers Inc., Vol. 2015-February. p. 33.5.1-33.5.4 7047163. (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Scopus citations

TMD FinFET with 4 nm thin body and back gate control for future low power technology

Chen, M. C., Li, K. S., Li, L. J., Lu, A. Y., Li, M. Y., Chang, Y. H., Lin, C. H., Chen, Y. J., Hou, Y. F., Chen, C. C., Wu, B. W., Wu, C. S., Yang, I., Lee, Y. J., Shieh, J. M., Yeh, W. K., Shih, J. H., Su, P. C., Sachid, A. B., Wang, T-H. & 2 others, Yang, F. L. & Hu, C-M., 16 Feb 2015, 2015 IEEE International Electron Devices Meeting, IEDM 2015. Institute of Electrical and Electronics Engineers Inc., p. 32.2.1-32.2.4 7409813. (Technical Digest - International Electron Devices Meeting, IEDM; vol. 2016-February).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

17 Scopus citations
2014

Investigation of random telegraph noise amplitudes in hafnium oxide resistive memory devices

Chung, Y. T., Liu, Y. H., Su, P. C., Cheng, Y. H., Wang, T-H. & Chen, M. C., 1 Jan 2014, 2014 IEEE International Reliability Physics Symposium, IRPS 2014. Institute of Electrical and Electronics Engineers Inc., 6861157. (IEEE International Reliability Physics Symposium Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Scopus citations

Statistical characterization of BTI-induced high-k dielectric traps in nanoscale transistors

Wang, T-H., Chiu, J. P. & Liu, Y. H., 1 Jul 2014, Bias Temperature Instability for Devices and Circuits. Springer New York, Vol. 9781461479093. p. 53-74 22 p.

Research output: Chapter in Book/Report/Conference proceedingChapter

2013

A 10 nm Si-based bulk FinFETs 6T SRAM with multiple fin heights technology for 25% better static noise margin

Chen, M. C., Lin, C. H., Hou, Y. F., Chen, Y. J., Lin, C. Y., Hsueh, F. K., Liu, H. L., Liu, C. T., Wang, B. W., Chen, H. C., Chen, C. C., Chen, S. H., Wu, C. T., Lai, T. Y., Lee, M. Y., Wu, B. W., Wu, C. S., Yang, I., Hsieh, Y. P., Ho, C. & 4 others, Wang, T-H., Sachid, A. B., Hu, C-M. & Yang, F. L., 17 Sep 2013, 2013 Symposium on VLSI Circuits, VLSIC 2013 - Digest of Technical Papers. 6578756. (IEEE Symposium on VLSI Circuits, Digest of Technical Papers).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Scopus citations

A 10 nm Si-based bulk FinFETs 6T SRAM with multiple fin heights technology for 25% better static noise margin

Chen, M. C., Lin, C. H., Hou, Y. F., Chen, Y. J., Lin, C. Y., Hsueh, F. K., Liu, H. L., Liu, C. T., Wang, B. W., Chen, H. C., Chen, C. C., Chen, S. H., Wu, C. T., Lai, T. Y., Lee, M. Y., Wu, B. W., Wu, C. S., Yang, I., Hsieh, Y. P., Ho, C. & 4 others, Wang, T-H., Sachid, A. B., Hu, C-M. & Yang, F. L., 9 Sep 2013, 2013 Symposium on VLSI Technology, VLSIT 2013 - Digest of Technical Papers. 6576630. (Digest of Technical Papers - Symposium on VLSI Technology).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Scopus citations

Estimating the detection stability of a Si nanowire sensor using an additional charging electrode

Chen, M. C., Chen, H. C., Lee, T. H., Lin, Y. H., Shih, J. H., Wang, B. W., Hou, Y. F., Chen, Y. J., Lin, C. Y., Lin, C. H., Hsieh, Y. P., Ho, C. H., Hua, M. Y., Qiu, J. T., Wang, T-H. & Yang, F. L., 7 Aug 2013, 2013 IEEE International Reliability Physics Symposium, IRPS 2013. 6532089. (IEEE International Reliability Physics Symposium Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Statistical Characterization and Modeling of the Temporal Evolutions of \Delta V\rm t Distribution in NBTI Recovery in Nanometer MOSFETs

Chiu, J. P., Liu, Y. H., Hsieh, H. D., Li, C. W., Chen, M. C. & Wang, T-H., 12 Feb 2013, In : IEEE Transactions on Electron Devices. 60, 3, p. 978-984 7 p., 6458996.

Research output: Contribution to journalArticle

11 Scopus citations
2012

A comparative study of NBTI and RTN amplitude distributions in high-κ gate dielectric pMOSFETs

Chiu, J. P., Chung, Y. T., Wang, T-H., Chen, M. C., Lu, C. Y. & Yu, K. F., 1 Feb 2012, In : IEEE Electron Device Letters. 33, 2, p. 176-178 3 p., 6112787.

Research output: Contribution to journalArticle

10 Scopus citations

Characterization and modeling of trap number and creation time distributions under negative-bias-temperature stress

Chiu, J. P., Li, C. W. & Wang, T-H., 20 Aug 2012, In : Applied Physics Letters. 101, 8, 082906.

Research output: Contribution to journalArticle

4 Scopus citations

Random Telegraph noise in 1X-nm CMOS silicide contacts and a method to extract trap density

Chen, M. C., Lin, C. Y., Chen, B. Y., Lin, C. H., Huang, G. W., Ho, C. H., Wang, T-H., Hu, C-M. & Yang, F. L., 1 Apr 2012, In : IEEE Electron Device Letters. 33, 4, p. 591-593 3 p., 6151006.

Research output: Contribution to journalArticle

2 Scopus citations

V t retention distribution tail in a multitime-program MLC SONOS memory due to a random-program-charge-induced current-path percolation effect

Chung, Y. T., Huang, T. I., Li, C. W., Chou, Y. L., Chiu, J. P., Wang, T-H., Lee, M. Y., Chen, K. C. & Lu, C. Y., 1 May 2012, In : IEEE Transactions on Electron Devices. 59, 5, p. 1371-1376 6 p., 6175940.

Research output: Contribution to journalArticle

2 Scopus citations
2011

A novel random telegraph signal method to study program/erase charge lateral spread and retention loss in a SONOS flash memory

Ma, H. C., Chou, Y. L., Chiu, J. P., Chung, Y. T., Lin, T. Y., Wang, T-H., Chao, Y. P., Chen, K. C. & Lu, C. Y., 1 Mar 2011, In : IEEE Transactions on Electron Devices. 58, 3, p. 623-630 8 p., 5680603.

Research output: Contribution to journalArticle

19 Scopus citations

Characterization of junction dosage effect on NAND arrays with charge pumping method

Lee, C., Lee, C. H., Cheng, C. H., Chong, L. H., Chen, K. F., Chen, Y. J., Huang, J. S., Ku, S. H., Zous, N. K., Huang, I. J., Han, T. T., Chen, M. S., Lu, W. P., Chen, K. C., Wang, T-H. & Lu, C. Y., 11 Jul 2011, Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011. p. 150-151 2 p. 5872269. (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Junction optimization for reliability issues in floating gate NAND flash cells

Lee, C. H., Yang, I. C., Lee, C., Cheng, C. H., Chong, L. H., Chen, K. F., Huang, J. S., Ku, S. H., Zous, N. K., Huang, I. J., Han, T. T., Chen, M. S., Lu, W. P., Chen, K. C., Wang, T-H. & Lu, C. Y., 23 Jun 2011, 2011 International Reliability Physics Symposium, IRPS 2011. 5784549. (IEEE International Reliability Physics Symposium Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Scopus citations

Silicide barrier engineering induced random telegraph noise in 1Xnm CMOS contacts

Chen, M. C., Lin, C. Y., Chen, B. Y., Lin, C. H., Huang, G. W., Huang, C. C., Ho, C. H., Wang, T-H., Hu, C-M. & Yang, F. L., 1 Dec 2011, 2011 International Electron Devices Meeting, IEDM 2011. 6131626. (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Variations of Vt retention loss in a SONOS flash memory due to a current-path percolation effect

Chou, Y. L., Chung, Y. T., Wang, T-H., Ku, S. H., Zou, N. K., Chen, V., Lu, W. P., Chen, K. C. & Lu, C. Y., 1 Apr 2011, In : IEEE Electron Device Letters. 32, 4, p. 458-460 3 p., 5723684.

Research output: Contribution to journalArticle

1 Scopus citations
2010
1 Scopus citations

Gate stack etch induced reliability issues in nitrided-based trapping storage cells

Yeh, T. H., Lin, S. W., Chen, Y. J., Chen, K. F., Huang, J. S., Cheng, C. H., Chong, L. H., Ku, S. H., Zous, N. K., Huang, I. J., Han, T. T., Chen, M. S., Lu, W. P., Chen, K. C., Wang, T-H. & Lu, C. Y., 20 Oct 2010, Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010. p. 48-49 2 p. 5488953. (Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Use of random telegraph signal as internal probe to study program/erase charge lateral spread in a SONOS flash memory

Chou, Y. L., Chiu, J. P., Ma, H. C., Wang, T-H., Chao, Y. P., Chen, K. C. & Lu, C. Y., 20 Oct 2010, 2010 IEEE International Reliability Physics Symposium, IRPS 2010. p. 960-963 4 p. 5488696. (IEEE International Reliability Physics Symposium Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations
2009

A novel hot-electron programming method in a buried diffusion bit-line SONOS memory by utilizing nonequilibrium charge transport

Wang, T-H., Tang, C. J., Li, C. W., Lee, C. H., Ou, T. F., Chang, Y. W., Tsai, W. J., Lu, T. C., Chen, K. C. & Lu, C. Y., 1 Jan 2009, In : IEEE Electron Device Letters. 30, 2, p. 165-167 3 p.

Research output: Contribution to journalArticle

Cell endurance prediction from a large-area SONOS capacitor

Lee, C. H., Tu, W. H., Gu, S. H., Wu, C. W., Lin, S. W., Yeh, T. H., Chen, K. F., Chen, Y. J., Hsieh, J. Y., Huang, I. J., Zous, N. K., Han, T. T., Chen, M. S., Lu, W. P., Chen, K. C., Wang, T-H. & Lu, C. Y., 12 Nov 2009, 2009 IEEE International Reliability Physics Symposium, IRPS 2009. p. 891-892 2 p. 5173373. (IEEE International Reliability Physics Symposium Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations
1 Scopus citations

Investigation of post-NBT stress current instability modes in HfSiON gate dielectric pMOSFETs by measurement of individual trapped charge emissions

Ma, H. C., Chiu, J. P., Tang, C. J., Wang, T-H. & Chang, C. S., 12 Nov 2009, 2009 IEEE International Reliability Physics Symposium, IRPS 2009. p. 51-54 4 p. 5173223. (IEEE International Reliability Physics Symposium Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Overall operation considerations for a SONOS-based memory

Lee, C. H., Tu, W. H., Chong, L. H., Gu, S. H., Chen, K. F., Chen, Y. J., Hsieh, J. Y., Huang, I. J., Zous, N. K., Han, T. T., Chen, M. S., Lu, W. P., Chen, K. C., Wang, T-H. & Lu, C. Y., 1 Dec 2009, 2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09. p. 148-149 2 p. 5159334. (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Program charge effect on random telegraph noise amplitude and its device structural dependence in SONOS flash memory

Chiu, J. P., Chou, Y. L., Ma, H. C., Wang, T-H., Ku, S. H., Zou, N. K., Chen, V., Lu, W. P., Chen, K. C. & Lu, C. Y., 1 Dec 2009, 2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest. 5424210. (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Program trapped-charge effect on random telegraph-noise amplitude in a planar SONOS flash memory cell

Ma, H. C., Chou, Y. L., Chiu, J. P., Wang, T-H., Ku, S. H., Zou, N. K., Chen, V., Lu, W. P., Chen, K. C. & Lu, C. Y., 9 Oct 2009, In : IEEE Electron Device Letters. 30, 11, p. 1188-1190 3 p.

Research output: Contribution to journalArticle

5 Scopus citations
5 Scopus citations
2008

A Highly punchthrough-immune operation method for an ultra-short-channel hot-carrier-injection type non-volatile memory cell

Tsai, W. J., Ou, T. F., Huang, J. S., Cheng, C. H., Lu, C. Y., Wang, T-H., Chen, K. F., Han, T. T., Lu, T. C., Chen, K. C. & Lu, C. Y., 1 Dec 2008, 2008 IEEE International Electron Devices Meeting, IEDM 2008. 4796822. (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Charge retention loss in a HfO2 dot flash memory via thermally assisted tunneling

Wang, T-H., Ma, H. C., Li, C. H., Lin, M., Chien, C-H. & Lei, T. F., 1 Jan 2008, In : IEEE Electron Device Letters. 29, 1, p. 109-110 2 p.

Research output: Contribution to journalArticle

4 Scopus citations

Effects of length scaling on electromigration in dual-damascene copper interconnects

Lin, M. H., Lin, M. T. & Wang, T-H., 1 Apr 2008, In : Microelectronics Reliability. 48, 4, p. 569-577 9 p.

Research output: Contribution to journalArticle

15 Scopus citations

Numerical simulation of programming transient behavior in charge trapping storage memory

Lee, C. H., Wu, C. W., Lin, S. W., Yeh, T. H., Gu, S. H., Chen, K. F., Chen, Y. J., Hsieh, J. Y., Huang, I. J., Zous, N. K., Han, T. T., Chen, M. S., Lu, W. P., Wang, T-H. & Lu, C. Y., 1 Sep 2008, 2008 Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design, Proceedings, NVSMW/ICMTD. p. 109-110 2 p. 4531838. (2008 Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design, Proceedings, NVSMW/ICMTD).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Scopus citations