1982 …2020

Research output per year

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Personal profile

Research Interests

Reliability of Semiconductor Devices, Flash Memory, High-speed Devices and Circuits

Experience

Education/Academic qualification

PhD, University of Illinois at Urbana-Champaign

External positions

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Projects

Frequency Response and Reliability in Negative Capacitance FET

Wang, T.

1/08/2031/07/21

Project: Government MinistryMinistry of Science and Technology

Accelerating Qualification Method for Data Retention in Post-SET/RESET Cycling RRAM and its Theory and Statistical Models.

Wang, T.

1/08/2031/07/21

Project: Government MinistryMinistry of Science and Technology

Frequency Response and Reliability in Negative Capacitance FET

Wang, T.

1/08/1931/07/20

Project: Government MinistryMinistry of Science and Technology

Accelerating Qualification Method for Data Retention in Post-SET/RESET Cycling RRAM and its Theory and Statistical Models.

Wang, T.

1/08/1931/07/20

Project: Government MinistryMinistry of Science and Technology

3D V-NAND Reliability Characterization and SiN Charge Transport

Wang, T.

1/08/1831/07/19

Project: Government MinistryMinistry of Science and Technology

Research Output

Analytical Modeling of Read-Induced SET-State Conductance Change in a Hafnium-Oxide Resistive Switching Device

Su, P. C., Jiang, C. M., Chen, Y. J., Wang, C. C., Li, K. S., Lin, C. C. & Wang, T., Jan 2020, In : IEEE Transactions on Electron Devices. 67, 1, p. 113-117 5 p., 8935500.

Research output: Contribution to journalArticle

  • Analysis and Realization of TLC or even QLC Operation with a High Performance Multi-times Verify Scheme in 3D NAND Flash memory

    Lu, C. C., Cheng, C. C., Chiu, H. P., Lin, W. L., Chen, T. W., Ku, S. H., Tsai, W. J., Lu, T. C., Chen, K. C., Wang, T-H. & Lu, C. Y., 16 Jan 2019, 2018 IEEE International Electron Devices Meeting, IEDM 2018. Institute of Electrical and Electronics Engineers Inc., p. 2.2.1-2.2.4 8614548. (Technical Digest - International Electron Devices Meeting, IEDM; vol. 2018-December).

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

  • 1 Scopus citations

    Investigation of Electron and Hole Lateral Migration in Silicon Nitride and Data Pattern Effects on Vt Retention Loss in a Multilevel Charge Trap Flash Memory

    Liu, Y. H., Zhan, T. C., Wang, T., Tsai, W. J., Lu, T. C., Chen, K. C. & Lu, C. Y., Dec 2019, In : IEEE Transactions on Electron Devices. 66, 12, p. 5155-5161 7 p., 8895844.

    Research output: Contribution to journalArticle

  • Chip-level characterization and RTN-induced error mitigation beyond 20nm floating gate flash memory

    Lin, T. W., Ku, S. H., Cheng, C. H., Lee, C. W., Ijen-Huang, Tsai, W. J., Lu, T. C., Lu, W. P., Chen, K. C., Wang, T-H. & Lu, C. Y., 25 May 2018, 2018 IEEE International Reliability Physics Symposium, IRPS 2018. Institute of Electrical and Electronics Engineers Inc., p. PMY.61-PMY.65 (IEEE International Reliability Physics Symposium Proceedings; vol. 2018-March).

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

  • 1 Scopus citations

    Correlation between SET-state current level and read-disturb failure time in a resistive switching memory

    Su, P. C., Jiang, C. M., Wang, C. W. & Wang, T-H., 25 May 2018, 2018 IEEE International Reliability Physics Symposium, IRPS 2018. Institute of Electrical and Electronics Engineers Inc., p. PMY.11-PMY.15 (IEEE International Reliability Physics Symposium Proceedings; vol. 2018-March).

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

  • 2 Scopus citations