1992 …2022

Research output per year

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Personal profile

Research Interests

Nano Electronics/Nano Photonics, Semiconductor Physics and Devices, IC technologies

Experience

Education/Academic qualification

PhD, Columbia University

External positions

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Projects

Expanding Silicon Photonics Portfolio for Visible to NIR with Silicon Nitride/Ge Platform

Li, P.

1/08/2031/07/21

Project: Government MinistryMinistry of Science and Technology

Quantum-dot Storage and Readout devices for Quantum computing

Li, P.

1/08/2031/07/21

Project: Government MinistryMinistry of Science and Technology

Expanding Silicon Photonics Portfolio for Visible to NIR with Silicon Nitride/Ge Platform

Li, P.

1/08/2231/07/23

Project: Government MinistryMinistry of Science and Technology

Expanding Silicon Photonics Portfolio for Visible to NIR with Silicon Nitride/Ge Platform

Li, P.

1/08/2131/07/22

Project: Government MinistryMinistry of Science and Technology

Quantum-dot Storage and Readout devices for Quantum computing

Li, P.

1/08/2131/07/22

Project: Government MinistryMinistry of Science and Technology

Research Output

A novel photoresist-based film-profile engineering scheme for fabricating double-gated, recess-channel IGZO thin-film transistors

Huang, Y. A., Peng, K. P., Meng, Y. C., Su, C. J., Li, P. W. & Lin, H. C., 1 Apr 2020, In : Japanese Journal of Applied Physics. 59, SG, 6 p., SGGJ01.

Research output: Contribution to journalArticle

Open Access
  • A Unique Approach to Generate Self-Aligned T-Gate Transistors in Counter-Doped Poly-Si with High Etching Selectivity and Isotropy

    Huang, Y. A., Liang, C. Y., Peng, K. P., Chen, K. M., Huang, G. W., Li, P-W. & Lin, H-C., Mar 2020, In : IEEE Electron Device Letters. 41, 3, p. 397-400 4 p., 8977479.

    Research output: Contribution to journalArticle

  • Impact of asymmetrical source/drain offsets on the operation of dual-gated poly-Si junctionless nanowire transistors

    Chang, Y. T., Wu, R. J., Peng, K. P., Su, C. J., Li, P. W. & Lin, H. C., Nov 2020, In : Vacuum. 181, 109613.

    Research output: Contribution to journalArticle

  • Nitride-stressor and quantum-size engineering in ge quantum-dot photoluminescence wavelength and exciton lifetime

    Kuo, Y. H., Chiu, S. H., Tien, C. W., Lin, S. D., Chang, W. H., George, T., Lin, H. C. & Li, P. W., 23 Mar 2020, In : Nano Futures. 4, 1, p. 1-9 9 p., 015001.

    Research output: Contribution to journalArticle

    Silicon nitride engineering: role of hydrogen-bonding in Ge quantum dot formation

    Peng, K-P., Kuo, Y-H., Chang, L-H., Hsiao, C-N., Chung, T-F., George, T., Lin, H-C. & Li, P-W., Oct 2020, In : Semiconductor Science and Technology. 35, 10, 9 p., 105018.

    Research output: Contribution to journalArticle