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Hiroshi Iwai

Contract Professor

1976 …2020

Research output per year

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Personal profile

Research Interests

Semiconductor Devices and Physics, CMOS Technology

Education/Academic qualification

PhD, The University of Tokyo

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Research Output

Bipolar Transistor Test Structures for Extracting Minority Carrier Lifetime in IGBTs

Takeuchi, K., Fukui, M., Saraya, T., Itou, K., Takakura, T., Suzuki, S., Numasawa, Y., Shigyo, N., Kakushima, K., Hoshii, T., Furukawa, K., Watanabe, M., Wakabayashi, H., Tsutsui, K., Iwai, H., Ogura, A., Saito, W., Nishizawa, S. I., Tsukuda, M., Omura, I. & 2 others, Ohashi, H. & Hiramoto, T., May 2020, In : IEEE Transactions on Semiconductor Manufacturing. 33, 2, p. 159-165 7 p., 8986674.

Research output: Contribution to journal › Article

    • Erratum: Experimental Details of a Steep-Slope Ferroelectric InGaAs Tunnel-FET with High-Quality PZT and Modeling Insights in the Transient Polarization (IEEE Transactions on Electron Devices (2020) 67:1 (377–382) DOI: 10.1109/TED.2019.2954585)

    Verhulst, A. S., Saeidi, A., Stolichnov, I., Alian, A., Iwai, H., Collaert, N. & Ionescu, A. M., Jul 2020, In : IEEE Transactions on Electron Devices. 67, 7, p. 3017 1 p., 9121803.

    Research output: Contribution to journal › Comment/debate

    • Experimental Details of a Steep-Slope Ferroelectric InGaAs Tunnel-FET with High-Quality PZT and Modeling Insights in the Transient Polarization

    Verhulst, A. S., Saeidi, A., Stolichnov, I., Alian, A., Iwai, H., Collaert, N. & Ionescu, A. M., Jan 2020, In : IEEE Transactions on Electron Devices. 67, 1, p. 377-382 6 p., 8935490.

    Research output: Contribution to journal › Article

    • 3 Scopus citations

    Impact of structural parameter scaling on on-state voltage in 1200 v scaled IGBTs

    Saraya, T., Itou, K., Takakura, T., Fukui, M., Suzuki, S., Takeuchi, K., Kakushima, K., Hoshii, T., Tsutsui, K., Iwai, H., Nishizawa, S. I., Omura, I. & Hiramoto, T., 1 Apr 2020, In : Japanese Journal of Applied Physics. 59, SG, SGGD18.

    Research output: Contribution to journal › Article

    • Study of E-Mode AlGaN/GaN MIS-HEMT with La-silicate Gate Insulator for Power Applications

    Huang, K. N., Lin, Y. C., Lin, J. C., Hsu, C. C., Lee, J. H., Wu, C. H., Yao, J. N., Hsu, H-T., Nagarajan, V., Kakushima, K., Tsutsui, K., Iwai, H., Chien, C-H. & Chang, E. Y., Feb 2020, In : Journal of Electronic Materials. 49, 2, p. 1348-1353 6 p.

    Research output: Contribution to journal › Article