Research output per year
Research output per year
Personal profile
Research Interests
Semiconductor Devices and Physics, CMOS Technology
Education/Academic qualification
PhD, The University of Tokyo
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Dive into the research topics where Hiroshi Iwai is active. These topic labels come from the works of this person. Together they form a unique fingerprint.
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Research output
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3.3 kV back-gate-controlled IGBT (BC-IGBT) using manufacturable double-side process technology
Saraya, T., Itou, K., Takakura, T., Fukui, M., Suzuki, S., Takeuchi, K., Tsukuda, M., Satoh, K., Matsudai, T., Kakushima, K., Hoshii, T., Tsutsui, K., Iwai, H., Ogura, A., Saito, W., Nishizawa, S., Omura, I., Ohashi, H. & Hiramoto, T., 12 Dec 2020, 2020 IEEE International Electron Devices Meeting, IEDM 2020. Institute of Electrical and Electronics Engineers Inc., p. 5.3.1-5.3.4 9371909. (Technical Digest - International Electron Devices Meeting, IEDM; vol. 2020-December).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review
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Bipolar Transistor Test Structures for Extracting Minority Carrier Lifetime in IGBTs
Takeuchi, K., Fukui, M., Saraya, T., Itou, K., Takakura, T., Suzuki, S., Numasawa, Y., Shigyo, N., Kakushima, K., Hoshii, T., Furukawa, K., Watanabe, M., Wakabayashi, H., Tsutsui, K., Iwai, H., Ogura, A., Saito, W., Nishizawa, S. I., Tsukuda, M., Omura, I. & 2 others, , May 2020, In: IEEE Transactions on Semiconductor Manufacturing. 33, 2, p. 159-165 7 p., 8986674.Research output: Contribution to journal › Article › peer-review
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Erratum: Experimental Details of a Steep-Slope Ferroelectric InGaAs Tunnel-FET with High-Quality PZT and Modeling Insights in the Transient Polarization (IEEE Transactions on Electron Devices (2020) 67:1 (377–382) DOI: 10.1109/TED.2019.2954585)
Verhulst, A. S., Saeidi, A., Stolichnov, I., Alian, A., Iwai, H., Collaert, N. & Ionescu, A. M., Jul 2020, In: IEEE Transactions on Electron Devices. 67, 7, p. 3017 1 p., 9121803.Research output: Contribution to journal › Comment/debate
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Experimental Details of a Steep-Slope Ferroelectric InGaAs Tunnel-FET with High-Quality PZT and Modeling Insights in the Transient Polarization
Verhulst, A. S., Saeidi, A., Stolichnov, I., Alian, A., Iwai, H., Collaert, N. & Ionescu, A. M., Jan 2020, In: IEEE Transactions on Electron Devices. 67, 1, p. 377-382 6 p., 8935490.Research output: Contribution to journal › Article › peer-review
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Impact of structural parameter scaling on on-state voltage in 1200 v scaled IGBTs
Saraya, T., Itou, K., Takakura, T., Fukui, M., Suzuki, S., Takeuchi, K., Kakushima, K., Hoshii, T., Tsutsui, K., Iwai, H., Nishizawa, S. I., Omura, I. & Hiramoto, T., 1 Apr 2020, In: Japanese Journal of Applied Physics. 59, SG, SGGD18.Research output: Contribution to journal › Article › peer-review