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Personal profile

Research Interests

InP, GaAs based compound materials and devices (HEMT, HBT) for wireless communication and sub-milimeterwave imaging applications

GaN based materials (MBE, MOCVD) and High frequency & High power electronics (HEMT) applications

III-V/ Si integration (Ge, SiGe, GaAs, InP) for logic applications

Advanced package (Flip chip) for high frequency and power applications

Experience

Dean of International College of Semiconductor Technology (2014-present)
Head of NCTU-TSMC Research center, National Chiao Tung University, Taiwan (2013-present)
Dean of Research and Development, NCTU (2011/02~2016/08)
Director, NCTU-TSMC Research Center (2013/05~present)
Head, Diamond Project, NCTU (2011/02~present)
Joint Professor, Dept. of Materials Science and Engineering and Dept. of Electronics Engineering, NCTU (2008/02~present)
Department Head, Dept. of Materials Science and Engineering, NCTU (2004/02~2008/02)
Dean, Office of International Affairs (2002/06~2004/01)
Professor, Dept. of Materials Science and Engineering, NCTU (1999/01~2008/02)
General Manager, Hexawave Inc., Taiwan (1997/12~1999/01)
Senior MTS, Microelectronics Division, Comsat Labs, USA (1988/05~1990/01)
Senior MTS, GaAs Component Division, Unisys Corp, USA (1985/12~1988/05)

Education/Academic qualification

PhD, University of Minnesota Twin Cities

External positions

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Projects

Development of High Performance InGaAs NC-FinFET Energy Saving Devices

Chang, E. Y.

1/08/2031/07/21

Project: Government MinistryMinistry of Science and Technology

Development Of A Novel eEhancemnt-mode GaN Power Device

Chang, E. Y.

1/08/2031/07/21

Project: Government MinistryMinistry of Science and Technology

Development Of A Novel eEhancemnt-mode GaN Power Device

Chang, E. Y.

1/08/2131/07/22

Project: Government MinistryMinistry of Science and Technology

Development of High Performance InGaAs NC-FinFET Energy Saving Devices

Chang, E. Y.

1/08/1931/07/20

Project: Government MinistryMinistry of Science and Technology

Development Of A Novel eEhancemnt-mode GaN Power Device

Chang, E. Y.

1/08/1931/07/20

Project: Government MinistryMinistry of Science and Technology

Research Output

  • Enhancement of electron transport properties of InAlGaN/AlN/GaN HEMTs on silicon substrate with GaN insertion layer

    Kao, M. L., Ha, M. T. H., Lin, Y., Weng, Y. C., Hsu, H-T. & Chang, E. Y., 1 Jun 2020, In : Applied Physics Express. 13, 6, 5 p., 065501.

    Research output: Contribution to journalArticle

    Gallium nitride (gan) high-electron-mobility transistors with thick copper metallization featuring a power density of 8.2 w/mm for ka-band applications

    Lin, Y. C., Chen, S. H., Lee, P. H., Lai, K. H., Huang, T. J., Chang, E. Y. & Hsu, H. T., Feb 2020, In : Micromachines. 11, 2, 222.

    Research output: Contribution to journalArticle

    Open Access
  • High performance UV photodetector based on MoS2 layers grown by pulsed laser deposition technique

    Kumar, S., Sharma, A., Ho, Y. T., Pandey, A., Tomar, M., Kapoor, A. K., Chang, E. Y. & Gupta, V., 15 Sep 2020, In : Journal of Alloys and Compounds. 835, 155222.

    Research output: Contribution to journalArticle

  • 1 Scopus citations

    Low-Frequency Noise Characterization of AlGaN/GaN HEMTs and MIS-HEMTs under UV Illumination

    Nagarajan, V., Chen, K. M., Lin, H. Y., Hu, H. H., Huang, G. W., Lin, C. J., Chen, B. Y., Anandan, D., Singh, S. K., Wu, C. H. & Chang, E. Y., 14 May 2020, In : IEEE Transactions on Nanotechnology. 19, p. 405-409 5 p., 9093974.

    Research output: Contribution to journalArticle

  • Activities

    • 3 Invited talk

    ISCSI-VII/ISTDM 2016

    Edward Yi Chang (Speaker)

    7 Jun 2016

    Activity: Talk or presentationInvited talk

    WCSM-2016

    Edward Yi Chang (Speaker)

    4 Mar 2016

    Activity: Talk or presentationInvited talk

    國際電子元件與材料研討會 IEDMS

    Edward Yi Chang (Speaker)

    19 Nov 2015

    Activity: Talk or presentationInvited talk