Edward Yi Chang

Professor

Phone03-5712121-31536/31421
Emailedc@mail.nctu.edu.tw
Websitehttp://csdlab.mse.nctu.edu.tw/

Research output per year

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Personal profile

Research Interests

InP, GaAs based compound materials and devices (HEMT, HBT) for wireless communication and sub-milimeterwave imaging applications

GaN based materials (MBE, MOCVD) and High frequency & High power electronics (HEMT) applications

III-V/ Si integration (Ge, SiGe, GaAs, InP) for logic applications

Advanced package (Flip chip) for high frequency and power applications

Experience

Dean of International College of Semiconductor Technology (2014-present)

Head of NCTU-TSMC Research center, National Chiao Tung University, Taiwan (2013-present)

Dean of Research and Development, NCTU (2011/02~2016/08)

Director, NCTU-TSMC Research Center (2013/05~present)

Head, Diamond Project, NCTU (2011/02~present)

Joint Professor, Dept. of Materials Science and Engineering and Dept. of Electronics Engineering, NCTU (2008/02~present)

Department Head, Dept. of Materials Science and Engineering, NCTU (2004/02~2008/02)

Dean, Office of International Affairs (2002/06~2004/01)

Professor, Dept. of Materials Science and Engineering, NCTU (1999/01~2008/02)

General Manager, Hexawave Inc., Taiwan (1997/12~1999/01)

Senior MTS, Microelectronics Division, Comsat Labs, USA (1988/05~1990/01)

Senior MTS, GaAs Component Division, Unisys Corp, USA (1985/12~1988/05)

Education/Academic qualification

PhD, University of Minnesota Twin Cities

External positions

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1 Not started
3 Active
64 Finished

Development of MmW/Sub-mmW GaN HEMT with Novel Ohmic Contact Materials and Technologies
Chang, E. Y.
1/10/20 → 30/09/21
Project: Government Ministry › Ministry of Science and Technology
Development Of A Novel eEhancemnt-mode GaN Power Device
Chang, E. Y.
1/08/20 → 31/07/21
Project: Government Ministry › Ministry of Science and Technology
Development of High Performance InGaAs NC-FinFET Energy Saving Devices
Chang, E. Y.
1/08/20 → 31/07/21
Project: Government Ministry › Ministry of Science and Technology
Development Of A Novel eEhancemnt-mode GaN Power Device
Chang, E. Y.
1/08/21 → 31/07/22
Project: Government Ministry › Ministry of Science and Technology
Development Of A Novel eEhancemnt-mode GaN Power Device
Chang, E. Y.
1/08/19 → 31/07/20
Project: Government Ministry › Ministry of Science and Technology

309 Article
110 Conference contribution
87 Patent
14 Conference article
More

Bias Temperature Instability of GaN Cascode Power Switch
Elangovan, S., Huang, C. H., Chen, C. A., Chcng, S. & Chang, E. Y., 20 Jul 2020, 2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2020. Institute of Electrical and Electronics Engineers Inc., 9260908. (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA; vol. 2020-July).
Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review
Effects of the growth temperature on structural and electrical properties of AlN/GaN heterostructures grown by metal organic chemical vapor deposition
Zheng, X. X., Lin, C-H., Ueda, D. & Chang, E. Y., 1 Sep 2020, In: Thin Solid Films. 709, 138228.
Research output: Contribution to journal › Article › peer-review
Enhancement of electron transport properties of InAlGaN/AlN/GaN HEMTs on silicon substrate with GaN insertion layer
Kao, M. L., Ha, M. T. H., Lin, Y., Weng, Y. C., Hsu, H-T. & Chang, E. Y., 1 Jun 2020, In: Applied Physics Express. 13, 6, 5 p., 065501.
Research output: Contribution to journal › Article › peer-review
Gallium nitride (gan) high-electron-mobility transistors with thick copper metallization featuring a power density of 8.2 w/mm for ka-band applications
Lin, Y. C., Chen, S. H., Lee, P. H., Lai, K. H., Huang, T. J., Chang, E. Y. & Hsu, H. T., Feb 2020, In: Micromachines. 11, 2, 222.
Research output: Contribution to journal › Article › peer-review

Open Access
1 Scopus citations
High performance UV photodetector based on MoS₂ layers grown by pulsed laser deposition technique
Kumar, S., Sharma, A., Ho, Y. T., Pandey, A., Tomar, M., Kapoor, A. K., Chang, E. Y. & Gupta, V., 15 Sep 2020, In: Journal of Alloys and Compounds. 835, 155222.
Research output: Contribution to journal › Article › peer-review
2 Scopus citations

Outstanding Electrical Engineer Award, Chinese Institute of Electrical Engineering
Chang, Edward Yi (Recipient), 2008
Prize: Honorary award
Outstanding Research Award, National Science Council
Chang, Edward Yi (Recipient), 2013
Prize: Honorary award
Outstanding Research Award, National Science Council
Chang, Edward Yi (Recipient), 2009
Prize: Honorary award

3 Invited talk

ISCSI-VII/ISTDM 2016
Edward Yi Chang (Speaker)
7 Jun 2016
Activity: Talk or presentation › Invited talk
WCSM-2016
Edward Yi Chang (Speaker)
4 Mar 2016
Activity: Talk or presentation › Invited talk
國際電子元件與材料研討會 IEDMS
Edward Yi Chang (Speaker)
19 Nov 2015
Activity: Talk or presentation › Invited talk