Projects per year
Personal profile
Research Interests
InP, GaAs based compound materials and devices (HEMT, HBT) for wireless communication and sub-milimeterwave imaging applications
GaN based materials (MBE, MOCVD) and High frequency & High power electronics (HEMT) applications
III-V/ Si integration (Ge, SiGe, GaAs, InP) for logic applications
Advanced package (Flip chip) for high frequency and power applications
Experience
Education/Academic qualification
PhD, University of Minnesota Twin Cities
External positions
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- 12 Similar Profiles
Network
Projects
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Development of MmW/Sub-mmW GaN HEMT with Novel Ohmic Contact Materials and Technologies
1/10/20 → 30/09/21
Project: Government Ministry › Ministry of Science and Technology
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Development Of A Novel eEhancemnt-mode GaN Power Device
1/08/20 → 31/07/21
Project: Government Ministry › Ministry of Science and Technology
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Development of High Performance InGaAs NC-FinFET Energy Saving Devices
1/08/20 → 31/07/21
Project: Government Ministry › Ministry of Science and Technology
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Development Of A Novel eEhancemnt-mode GaN Power Device
1/08/21 → 31/07/22
Project: Government Ministry › Ministry of Science and Technology
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Development of High Performance InGaAs NC-FinFET Energy Saving Devices
1/08/19 → 31/07/20
Project: Government Ministry › Ministry of Science and Technology
Research output
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Derivation of the Resonance Mechanism for Wireless Power Transfer Using Class-E Amplifier
Liu, C-Y., Wang, G-B., Wu, C-C., Chang, E. Y., Cheng, S. & Chieng, W-H., 26 Jan 2021, In: Energies. 14, 3, 22 p., 632.Research output: Contribution to journal › Article › peer-review
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Erratum: Room-temperature deposition of a poling-free ferroelectric AlScN film by reactive sputtering (Applied Physics Letters (2021)118 (082902) DOI: 10.1063/5.0035335)
Tsai, S. L., Hoshii, T., Wakabayashi, H., Tsutsui, K., Chung, T. K., Chang, E. Y. & Kakushima, K., 8 Mar 2021, In: Applied Physics Letters. 118, 10, 109901.Research output: Contribution to journal › Comment/debate
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Investigation of device transport characteristics enhancement of In0.53Ga0.47As MOSFET through in situ NH3/N2remote-plasma treatment
Huang, P., Luc, Q. H., Sibaja-Hernandez, A., Hsu, C. W., Wu, J. Y., Ko, H. L., Tran, N. A., Collaert, N. & Chang, E. Y., 1 Jan 2021, In: AIP Advances. 11, 1, 015050.Research output: Contribution to journal › Article › peer-review
Open Access -
Roomerature deposition of a poling-free ferroelectric AlScN film by reactive sputtering
Tsai, S. L., Hoshii, T., Wakabayashi, H., Tsutsui, K., Chung, T. K., Chang, E. Y. & Kakushima, K., 22 Feb 2021, In: Applied Physics Letters. 118, 8, 082902.Research output: Contribution to journal › Article › peer-review
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Bias Temperature Instability of GaN Cascode Power Switch
Elangovan, S., Huang, C. H., Chen, C. A., Chcng, S. & Chang, E. Y., 20 Jul 2020, 2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2020. Institute of Electrical and Electronics Engineers Inc., 9260908. (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA; vol. 2020-July).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review
Prizes
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Outstanding Electrical Engineer Award, Chinese Institute of Electrical Engineering
Chang, Edward Yi (Recipient), 2008
Prize: Honorary award
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Outstanding Research Award, National Science Council
Chang, Edward Yi (Recipient), 2013
Prize: Honorary award
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Outstanding Research Award, National Science Council
Chang, Edward Yi (Recipient), 2009
Prize: Honorary award
Activities
- 3 Invited talk
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ISCSI-VII/ISTDM 2016
Edward Yi Chang (Speaker)
7 Jun 2016Activity: Talk or presentation › Invited talk
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國際電子元件與材料研討會 IEDMS
Edward Yi Chang (Speaker)
19 Nov 2015Activity: Talk or presentation › Invited talk