Chun-Hsiung Lin

Professor

International College of Semiconductor Technology

Phone+886-3-5712121#55918
Emailchun_lin@nctu.edu.tw
Websitehttps://lin-icst-nctu.weebly.com/

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Personal profile

Research Interests

Advanced III-V compound semiconductor and Si CMOS Devices
Compound semiconductor device manufacturing and integration (GaAs, InP, Sb-based and GaN)
Semiconductor process technology of advanced 3D Si CMOS devices (e.g. FinFET)

Education/Academic qualification

PhD, University of Illinois at Urbana-Champaign

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臺瑞(SE)雙邊協議型擴充加值(add-on)國際合作研究計畫-開發應用於毫米波/次毫米波之氮化銦鋁鎵/氮化鎵高電子遷移率電晶體於絕緣體上矽(SOI)基板(1/5)
Lin, C.
1/10/20 → 30/09/21
Project: Government Ministry › Ministry of Science and Technology
InxGa1-xAs channel MOSFET for high frequency amplifier application and integration of InxGa1-xAs channel with Si FinFET using Core Shell structure.
Lin, C.
1/03/20 → 28/02/21
Project: Government Ministry › Ministry of Science and Technology
InxGa1-xAs channel MOSFET for high frequency amplifier application and integration of InxGa1-xAs channel with Si FinFET using Core Shell structure.
Lin, C.
1/03/22 → 28/02/23
Project: Government Ministry › Ministry of Science and Technology
InxGa1-xAs channel MOSFET for high frequency amplifier application and integration of InxGa1-xAs channel with Si FinFET using Core Shell structure.
Lin, C.
1/03/21 → 28/02/22
Project: Government Ministry › Ministry of Science and Technology

20 Article
7 Conference article
4 Conference contribution

Effects of the growth temperature on structural and electrical properties of AlN/GaN heterostructures grown by metal organic chemical vapor deposition
Zheng, X. X., Lin, C-H., Ueda, D. & Chang, E. Y., 1 Sep 2020, In: Thin Solid Films. 709, 138228.
Research output: Contribution to journal › Article › peer-review
High performance In_0.53Ga_0.47As FinFETs fabricated on 300 mm Si substrate
Huang, M. L., Chang, S. W., Chen, M. K., Oniki, Y., Chen, H. C., Lin, C. H., Lee, W. C., Lin, C-H., Khaderbad, M. A., Lee, K. Y., Chen, Z. C., Tsai, P. Y., Lin, L. T., Tsai, M. H., Hung, C. L., Huang, T. C., Lin, Y. C., Yeo, Y. C., Jang, S. M., Hwang, H. Y. & 2 others, Wang, H. C. H. & Diaz, C. H., 21 Sep 2016, 2016 IEEE Symposium on VLSI Technology, VLSI Technology 2016. Institute of Electrical and Electronics Engineers Inc., 7573361. (Digest of Technical Papers - Symposium on VLSI Technology; vol. 2016-September).
Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review
18 Scopus citations
In_0.53Ga_0.47As MOSFETs with high channel mobility and gate stack quality fabricated on 300 mm Si substrate
Huang, M. L., Chang, S. W., Chen, M. K., Fan, C. H., Lin, H. T., Lin, C. H., Chu, R. L., Lee, K. Y., Khaderbad, M. A., Chen, Z. C., Lin, C-H., Chen, C. H., Lin, L. T., Lin, H. J., Chang, H. C., Yang, C. L., Leung, Y. K., Yeo, Y. C., Jang, S. M., Hwang, H. Y. & 1 others, Diaz, C. H., 25 Aug 2015, 2015 Symposium on VLSI Technology, VLSI Technology 2015 - Digest of Technical Papers. Institute of Electrical and Electronics Engineers Inc., p. T204-T205 7223675. (Digest of Technical Papers - Symposium on VLSI Technology; vol. 2015-August).
Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review
30 Scopus citations
High-k dielectrics on (100) and (110) n-InAs: Physical and electrical characterizations
Wang, C. H., Doornbos, G., Astromskas, G., Vellianitis, G., Oxland, R., Holland, M. C., Huang, M. L., Lin, C-H., Hsieh, C. H., Chang, Y. S., Lee, T. L., Chen, Y. Y., Ramvall, P., Lind, E., Hsu, W. C., Wernersson, L. E., Droopad, R., Passlack, M. & Diaz, C. H., 1 Jan 2014, In: AIP Advances. 4, 4, 047108.
Research output: Contribution to journal › Article › peer-review

Open Access
10 Scopus citations
Low interface trap density Al₂O₃/In _0.53Ga_0.47As MOS capacitor fabricated on MOCVD-grown InGaAs epitaxial layer on Si substrate
Lin, Y. C., Huang, M. L., Chen, C. Y., Chen, M. K., Lin, H. T., Tsai, P. Y., Lin, C. H., Chang, H. C., Lee, T. L., Lo, C. C., Jang, S. M., Diaz, C. H., Hwang, H. Y., Sun, Y. C. & Chang, E. Y., 1 Jan 2014, In: Applied Physics Express. 7, 4, 041202.
Research output: Contribution to journal › Article › peer-review
16 Scopus citations