1992 …2022

Research output per year

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Personal profile

Research Interests

Advanced III-V compound semiconductor and Si CMOS Devices
Compound semiconductor device manufacturing and integration (GaAs, InP, Sb-based and GaN)
Semiconductor process technology of advanced 3D Si CMOS devices (e.g. FinFET)

Education/Academic qualification

PhD, University of Illinois at Urbana-Champaign

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Projects

Research Output

  • 20 Article
  • 7 Conference article
  • 4 Conference contribution
  • High performance In0.53Ga0.47As FinFETs fabricated on 300 mm Si substrate

    Huang, M. L., Chang, S. W., Chen, M. K., Oniki, Y., Chen, H. C., Lin, C. H., Lee, W. C., Lin, C-H., Khaderbad, M. A., Lee, K. Y., Chen, Z. C., Tsai, P. Y., Lin, L. T., Tsai, M. H., Hung, C. L., Huang, T. C., Lin, Y. C., Yeo, Y. C., Jang, S. M., Hwang, H. Y. & 2 others, Wang, H. C. H. & Diaz, C. H., 21 Sep 2016, 2016 IEEE Symposium on VLSI Technology, VLSI Technology 2016. Institute of Electrical and Electronics Engineers Inc., 7573361. (Digest of Technical Papers - Symposium on VLSI Technology; vol. 2016-September).

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

  • 17 Scopus citations

    In0.53Ga0.47As MOSFETs with high channel mobility and gate stack quality fabricated on 300 mm Si substrate

    Huang, M. L., Chang, S. W., Chen, M. K., Fan, C. H., Lin, H. T., Lin, C. H., Chu, R. L., Lee, K. Y., Khaderbad, M. A., Chen, Z. C., Lin, C-H., Chen, C. H., Lin, L. T., Lin, H. J., Chang, H. C., Yang, C. L., Leung, Y. K., Yeo, Y. C., Jang, S. M., Hwang, H. Y. & 1 others, Diaz, C. H., 25 Aug 2015, 2015 Symposium on VLSI Technology, VLSI Technology 2015 - Digest of Technical Papers. Institute of Electrical and Electronics Engineers Inc., p. T204-T205 7223675. (Digest of Technical Papers - Symposium on VLSI Technology; vol. 2015-August).

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

  • 29 Scopus citations

    High-k dielectrics on (100) and (110) n-InAs: Physical and electrical characterizations

    Wang, C. H., Doornbos, G., Astromskas, G., Vellianitis, G., Oxland, R., Holland, M. C., Huang, M. L., Lin, C-H., Hsieh, C. H., Chang, Y. S., Lee, T. L., Chen, Y. Y., Ramvall, P., Lind, E., Hsu, W. C., Wernersson, L. E., Droopad, R., Passlack, M. & Diaz, C. H., 1 Jan 2014, In : AIP Advances. 4, 4, 047108.

    Research output: Contribution to journalArticle

    Open Access
  • 10 Scopus citations

    Low interface trap density Al2O3/In 0.53Ga0.47As MOS capacitor fabricated on MOCVD-grown InGaAs epitaxial layer on Si substrate

    Lin, Y. C., Huang, M. L., Chen, C. Y., Chen, M. K., Lin, H. T., Tsai, P. Y., Lin, C. H., Chang, H. C., Lee, T. L., Lo, C. C., Jang, S. M., Diaz, C. H., Hwang, H. Y., Sun, Y. C. & Chang, E. Y., 1 Jan 2014, In : Applied Physics Express. 7, 4, 041202.

    Research output: Contribution to journalArticle

  • 16 Scopus citations