Chiung-Yuan Lin

Associate Professor

Phone03-5731605
Emailgenelin@mail.nctu.edu.tw
Websitehttp://web.it.nctu.edu.tw/~genelin/

Research activity per year

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Personal profile

Research Interests

First-principles Calculation of Crystal Bulks and Surfaces, Theory of Scanning Tunneling Microscopy (STM), Atomic-scale Magnetism

Experience

Education/Academic qualification

PhD, Boston University

External positions

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10 Finished

First-principles Study of Migration Path of TiO2 Oxygen Vacancy: Towards the Application of RRAM-based Electronic Synapses
Lin, C.
1/08/17 → 31/07/18
Project: Government Ministry › Ministry of Science and Technology
First-principles Calculations Of Insulator/silicene/insulator Junctions
Lin, C.
1/08/16 → 31/07/17
Project: Government Ministry › Ministry of Science and Technology
以第一原理檢視表面鈦原子自旋之磁交互作用
Lin, C.
1/08/15 → 31/07/16
Project: Government Ministry › Ministry of Science and Technology
Classical-Molecular-Dynamics and First-Principles Quantum-Transport Calculations of Nanocrystalline-Silicon Solar Cell Embeded in An Amorphous Silicon-Oxide Matrix
Lin, C.
1/08/14 → 31/07/15
Project: Government Ministry › Ministry of Science and Technology
First-principles And Tight-binding Calculations of Nanocrystalline-silicon Solar Cell Embeded in A ZnO Matrix
Lin, C.
1/08/13 → 31/07/14
Project: Government Ministry › Ministry of Science and Technology

12 Article
1 Conference contribution
1 Comment/debate

Universal nonequilibrium I-V curve near the two-channel Kondo-Luttinger quantum critical point
Lin, C-Y., Chang, Y. Y., Rylands, C., Andrei, N. & Chung, C-H., 28 Aug 2020, In: Physical Review B. 102, 7, 14 p., 075145.
Research output: Contribution to journal › Article › peer-review
Activated layered magnetism from bulk TiN
Lin, C. Y., Yang, S. W., Ou, K. L. & Jones, B. A., 24 Dec 2019, In: Physical Review Materials. 3, 12, 124412.
Research output: Contribution to journal › Article › peer-review
First Experimental Demonstration and Mechanism of Abnormal Palladium Diffusion Induced by Excess Interstitial Ge
Chou, C. H., Shih, A. S., Yu, S. C., Lin, Y. H., Tsai, Y. H., Lin, C-Y., Yeh, W. K. & Chien, C-H., 1 Nov 2018, In: IEEE Electron Device Letters. 39, 11, p. 1632-1635 4 p., 8470143.
Research output: Contribution to journal › Article › peer-review
A study on NiGe-contacted Ge n⁺/p Ge shallow junction prepared by dopant segregation technique
Tsui, B-Y., Shih, J. J., Lin, H. C. & Lin, C-Y., 1 May 2015, In: Solid-State Electronics. 107, p. 40-46 7 p., 6755.
Research output: Contribution to journal › Article › peer-review
11 Scopus citations
First-principles calculations on the schottky barrier height of the NiGe/N-type Ge contact with dopant segregation
Lin, H. C., Lin, C-Y., Shih, C. J. & Tsui, B-Y., 1 Jan 2014, 2014 International Symposium on Next-Generation Electronics, ISNE 2014. IEEE Computer Society, 6839344. (2014 International Symposium on Next-Generation Electronics, ISNE 2014).
Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review