Projects per year
Personal profile
Research Interests
First-principles Calculation of Crystal Bulks and Surfaces, Theory of Scanning Tunneling Microscopy (STM), Atomic-scale Magnetism
Experience
Education/Academic qualification
PhD, Boston University
External positions
Fingerprint
- 6 Similar Profiles
Network
Projects
- 10 Finished
-
First-principles Study of Migration Path of TiO2 Oxygen Vacancy: Towards the Application of RRAM-based Electronic Synapses
1/08/17 → 31/07/18
Project: Government Ministry › Ministry of Science and Technology
-
First-principles Calculations Of Insulator/silicene/insulator Junctions
1/08/16 → 31/07/17
Project: Government Ministry › Ministry of Science and Technology
-
以第一原理檢視表面鈦原子自旋之磁交互作用
1/08/15 → 31/07/16
Project: Government Ministry › Ministry of Science and Technology
-
Classical-Molecular-Dynamics and First-Principles Quantum-Transport Calculations of Nanocrystalline-Silicon Solar Cell Embeded in An Amorphous Silicon-Oxide Matrix
1/08/14 → 31/07/15
Project: Government Ministry › Ministry of Science and Technology
-
First-principles And Tight-binding Calculations of Nanocrystalline-silicon Solar Cell Embeded in A ZnO Matrix
1/08/13 → 31/07/14
Project: Government Ministry › Ministry of Science and Technology
Research output
-
Universal nonequilibrium I-V curve near the two-channel Kondo-Luttinger quantum critical point
Lin, C-Y., Chang, Y. Y., Rylands, C., Andrei, N. & Chung, C-H., 28 Aug 2020, In: Physical Review B. 102, 7, 14 p., 075145.Research output: Contribution to journal › Article › peer-review
-
Activated layered magnetism from bulk TiN
Lin, C. Y., Yang, S. W., Ou, K. L. & Jones, B. A., 24 Dec 2019, In: Physical Review Materials. 3, 12, 124412.Research output: Contribution to journal › Article › peer-review
-
First Experimental Demonstration and Mechanism of Abnormal Palladium Diffusion Induced by Excess Interstitial Ge
Chou, C. H., Shih, A. S., Yu, S. C., Lin, Y. H., Tsai, Y. H., Lin, C-Y., Yeh, W. K. & Chien, C-H., 1 Nov 2018, In: IEEE Electron Device Letters. 39, 11, p. 1632-1635 4 p., 8470143.Research output: Contribution to journal › Article › peer-review
-
A study on NiGe-contacted Ge n+/p Ge shallow junction prepared by dopant segregation technique
Tsui, B-Y., Shih, J. J., Lin, H. C. & Lin, C-Y., 1 May 2015, In: Solid-State Electronics. 107, p. 40-46 7 p., 6755.Research output: Contribution to journal › Article › peer-review
-
First-principles calculations on the schottky barrier height of the NiGe/N-type Ge contact with dopant segregation
Lin, H. C., Lin, C-Y., Shih, C. J. & Tsui, B-Y., 1 Jan 2014, 2014 International Symposium on Next-Generation Electronics, ISNE 2014. IEEE Computer Society, 6839344. (2014 International Symposium on Next-Generation Electronics, ISNE 2014).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review