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Chiung-Yuan Lin

Associate Professor

 https://orcid.org/0000-0002-9759-1323
20052019

Research output per year

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Personal profile

Research Interests

First-principles Calculation of Crystal Bulks and Surfaces, Theory of Scanning Tunneling Microscopy (STM), Atomic-scale Magnetism

Experience

Education/Academic qualification

PhD, Boston University

External positions

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Projects

First-principles Study of Migration Path of TiO2 Oxygen Vacancy: Towards the Application of RRAM-based Electronic Synapses

Lin, C.

1/08/17 → 31/07/18

Project: Government Ministry › Ministry of Science and Technology

First-principles Calculations Of Insulator/silicene/insulator Junctions

Lin, C.

1/08/16 → 31/07/17

Project: Government Ministry › Ministry of Science and Technology

以第一原理檢視表面鈦原子自旋之磁交互作用

Lin, C.

1/08/15 → 31/07/16

Project: Government Ministry › Ministry of Science and Technology

Classical-Molecular-Dynamics and First-Principles Quantum-Transport Calculations of Nanocrystalline-Silicon Solar Cell Embeded in An Amorphous Silicon-Oxide Matrix

Lin, C.

1/08/14 → 31/07/15

Project: Government Ministry › Ministry of Science and Technology

First-principles And Tight-binding Calculations of Nanocrystalline-silicon Solar Cell Embeded in A ZnO Matrix

Lin, C.

1/08/13 → 31/07/14

Project: Government Ministry › Ministry of Science and Technology

Research Output

  • 11 Article
  • 1 Conference contribution
  • 1 Comment/debate

Activated layered magnetism from bulk TiN

Lin, C. Y., Yang, S. W., Ou, K. L. & Jones, B. A., 24 Dec 2019, In : Physical Review Materials. 3, 12, 124412.

Research output: Contribution to journal › Article

    • First Experimental Demonstration and Mechanism of Abnormal Palladium Diffusion Induced by Excess Interstitial Ge

    Chou, C. H., Shih, A. S., Yu, S. C., Lin, Y. H., Tsai, Y. H., Lin, C-Y., Yeh, W. K. & Chien, C-H., 1 Nov 2018, In : IEEE Electron Device Letters. 39, 11, p. 1632-1635 4 p., 8470143.

    Research output: Contribution to journal › Article

    • A study on NiGe-contacted Ge n+/p Ge shallow junction prepared by dopant segregation technique

    Tsui, B-Y., Shih, J. J., Lin, H. C. & Lin, C-Y., 1 May 2015, In : Solid-State Electronics. 107, p. 40-46 7 p., 6755.

    Research output: Contribution to journal › Article

    • 11 Scopus citations

    First-principles calculations on the schottky barrier height of the NiGe/N-type Ge contact with dopant segregation

    Lin, H. C., Lin, C-Y., Shih, C. J. & Tsui, B-Y., 1 Jan 2014, 2014 International Symposium on Next-Generation Electronics, ISNE 2014. IEEE Computer Society, 6839344. (2014 International Symposium on Next-Generation Electronics, ISNE 2014).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

    • Hydrothermal crystallization and modification of surface hydroxyl groups of anodized TiO 2 nanotube-arrays for more efficient photoenergy conversion

    Kuo, Y. Y., Li, T. H., Yao, J. N., Lin, C-Y. & Chien, C-H., 1 Sep 2012, In : Electrochimica Acta. 78, p. 236-243 8 p.

    Research output: Contribution to journal › Article

    • 28 Scopus citations