Projects per year
Personal profile
Research Interests
Applied Physical Science, Engineering Science
Education/Academic qualification
PhD, University of California, Berkeley
External positions
Fingerprint
Dive into the research topics where Chen-Ming Hu is active. These topic labels come from the works of this person. Together they form a unique fingerprint.
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Recent external collaboration on country level. Dive into details by clicking on the dots.
Projects
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Center for Semiconductor Technology Research (3/5)
1/03/20 → 31/05/21
Project: Government Ministry › Ministry of Science and Technology
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Center for Semiconductor Technology Research
1/03/19 → 31/05/20
Project: Government Ministry › Ministry of Science and Technology
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Intelligent Semiconductor Nanosystem Technology Research Center
1/03/18 → 31/05/19
Project: Government Ministry › Ministry of Science and Technology
Research output
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Electric Field-Induced Permittivity Enhancement in Negative-Capacitance FET
Liao, Y. H., Kwon, D., Cheema, S., Shanker, N., Tan, A. J., Kao, M. Y., Wang, L. C., Hu, C-M. & Salahuddin, S., 2021, (Accepted/In press) In: IEEE Transactions on Electron Devices.Research output: Contribution to journal › Article › peer-review
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Energy Storage and Reuse in Negative Capacitance
Kao, M. Y., Liao, Y. H., Pahwa, G., Dasgupta, A., Salahuddin, S. & Hu, C., 2021, (Accepted/In press) In: IEEE Transactions on Electron Devices.Research output: Contribution to journal › Article › peer-review
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A Density Metric for Semiconductor Technology
Wong, H. S. P., Akarvardar, K., Antoniadis, D., Bokor, J., Hu, C., King-Liu, T. J., Mitra, S., Plummer, J. D. & Salahuddin, S., Apr 2020, In: Proceedings of the IEEE. 108, 4, p. 478-482 5 p., 9063714.Research output: Contribution to journal › Editorial
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Analysis and Modeling of Polarization Gradient Effect on Negative Capacitance FET
Kao, M. Y., Pahwa, G., Dasgupta, A., Salahuddin, S. & Hu, C., Oct 2020, In: IEEE Transactions on Electron Devices. 67, 10, p. 4521-4525 5 p., 9165847.Research output: Contribution to journal › Article › peer-review
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A New 8T Hybrid Nonvolatile SRAM with Ferroelectric FET
You, W. X., Su, P. & Hu, C., 7 Feb 2020, In: IEEE Journal of the Electron Devices Society. 8, 1, p. 171-175 5 p., 8986584.Research output: Contribution to journal › Article › peer-review
Open Access