Research output per year
Research output per year
Personal profile
Education/Academic qualification
PhD, National Yang Ming Chiao Tung University
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Dive into the research topics where Chen-Han Chou is active. These topic labels come from the works of this person. Together they form a unique fingerprint.
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Research output
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Improving Interface State Density of TiN/HfO2/IL Gate Stack on Si0.5Ge0.5by Optimization of Post Metallization Annealing and Oxygen Pressure
Lee, M. C., Lee, W. L., Yu, C. Y., Lin, H. J., Liu, H. H., Zhang, J. L., Wang, S. Y., Chou, C. H., Luo, G. L. & Chien, C. H., Aug 2020, 2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020. Institute of Electrical and Electronics Engineers Inc., p. 102-103 2 p. 9203589. (2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review
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Incorporating yttrium into a GeO interfacial layer with HfO2-based gate stack on Ge
Chou, C. H., Lu, Y. H., Tsai, Y. H., Shih, A. S., Yeh, W. K. & Chien, C. H., 19 Jan 2018, In: ECS Journal of Solid State Science and Technology. 7, 2, p. N15-N19 5 p.Research output: Contribution to journal › Article › peer-review
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Experimental Realization of Thermal Stability Enhancement of Nickel Germanide Alloy by Using TiN Metal Capping
Chou, C. H., Tsai, Y. H., Hsu, C. C., Jau, Y. H., Lin, Y. H., Yeh, W. K. & Chien, C. H., 1 May 2017, In: IEEE Transactions on Electron Devices. 64, 5, p. 2314-2320 7 p., 7885604.Research output: Contribution to journal › Article › peer-review
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Experimental Realization of a Ternary-Phase Alloy Through Microwave-Activated Annealing for Ge Schottky pMOSFETs
Hsu, C. C., Chi, W. C., Tsai, Y. H., Chou, C. H., Chen, C. W., Chien, H. P., Chuang, S. S., Luo, G. L., Lee, Y. J. & Chien, C. H., 1 Jul 2016, In: IEEE Transactions on Electron Devices. 63, 7, p. 2714-2721 8 p., 7484321.Research output: Contribution to journal › Article › peer-review
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Low-leakage tetragonal ZrO 2 (EOT < 1 nm) with in situ plasma interfacial passivation on germanium
Chou, C. H., Chang, H. H., Hsu, C. C., Yeh, W. K. & Chien, C. H., 1 Feb 2016, In: IEEE Electron Device Letters. 37, 2, p. 138-141 4 p., 7358074.Research output: Contribution to journal › Article › peer-review