Engineering & Materials Science
Oxides
Germanium
Plasmas
Annealing
Substrates
Gate dielectrics
Metals
Thin film transistors
Polysilicon
Leakage currents
Flash memory
MOSFET devices
Silicon
Ferroelectric materials
Buffer layers
Data storage equipment
Interface states
Electric properties
Thin films
Oxide semiconductors
Nanocrystals
Field effect transistors
Aluminum oxide
Capacitors
Charge trapping
Degradation
Temperature
Nitrides
Doping (additives)
Silicon oxides
FinFET
Electrodes
Chemical vapor deposition
Nitrogen
Hafnium
Electric potential
Thermodynamic stability
Nanowires
Transistors
Silicates
Atomic layer deposition
Nickel
Hafnium oxides
Nitridation
Capacitance
X ray photoelectron spectroscopy
Bismuth
Crystallization
MOS capacitors
Demonstrations
Chemical Compounds
Oxides
Germanium
Substrates
Annealing
Metals
Thin film transistors
Gate dielectrics
Plasmas
Silicon
Buffer layers
Polysilicon
Ferroelectric materials
Leakage currents
poly(3-hexylthiophene)
MOSFET devices
Data storage equipment
Electric properties
Thin films
Flash memory
Hafnium
Nanocrystals
Silicates
hafnium oxide
FinFET
Nitrides
Charge trapping
Degradation
Interface states
Capacitors
Temperature
Aluminum oxide
Thermodynamic stability
Doping (additives)
Silicon oxides
Bismuth
Chemical vapor deposition
gallium arsenide
Field effect transistors
Oxide semiconductors
Electrodes
Strontium
nickel silicide
Capacitance
X ray photoelectron spectroscopy
Electric potential
Crystallization
Atomic layer deposition
aluminum gallium nitride
Microwaves
Semiconductor materials
Physics & Astronomy
metal oxide semiconductors
oxides
field effect transistors
trapping
thin films
annealing
leakage
capacitors
transistors
flash
capacitance
silicon
nanocrystals
bismuth
implantation
strontium
buffers
silicon oxides
germanium
electrical properties
gels
nitrogen
nitrides
insulators
metals
damage
electric potential
cerium oxides
performance
tantalum
degradation
nickel
hafnium oxides
electrodes
endurance
traps
silicates
passivity
hafnium
CMOS
electric contacts
hysteresis
retarding
boron
surface treatment
MIS (semiconductors)
temperature
nanowires
penetration
titanium