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Personal profile

Research Interests

Semiconductor Physics & Devices, IC Technologies, Electrical Characterization Measurement & Analyses

Experience

Education/Academic qualification

PhD, National Chiao Tung University

External positions

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Projects

SiC CMOS Device and IC Process Technology

Tsui, B.

1/05/2030/04/21

Project: Government MinistryMinistry of Science and Technology

SiC CMOS Device and IC Process Technology

Tsui, B.

1/05/1930/04/20

Project: Government MinistryMinistry of Science and Technology

SiC CMOS Device and IC Process Technology

Tsui, B.

1/05/1830/04/19

Project: Government MinistryMinistry of Science and Technology

Service Proposal for Precious Instruments of National Chiao-Tung University

Tsui, B.

1/12/1730/04/19

Project: Government MinistryMinistry of Science and Technology

Research Output

Degradation Mechanism of Ge N+-P Shallow Junction with Thin GeSn Surface Layer

Tsui, B. Y., Liao, H. H. & Chen, Y. J., Mar 2020, In : IEEE Transactions on Electron Devices. 67, 3, p. 1120-1125 6 p., 8964438.

Research output: Contribution to journalArticle

  • Extraction of Ultra-Low Contact Resistivity by End-Resistance Method

    Tsui, B. Y., Lee, Y. H., Wu, D. Y., Lee, Y. J. & Li, M. Y., May 2020, 2020 IEEE 33rd International Conference on Microelectronic Test Structures, ICMTS 2020 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 9107910. (IEEE International Conference on Microelectronic Test Structures; vol. 2020-May).

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

  • Photon-Detection-Probability Simulation Method for CMOS Single-Photon Avalanche Diodes

    Hsieh, C. A., Tsai, C. M., Tsui, B. Y., Hsiao, B. J. & Lin, S. D., 13 Jan 2020, In : Sensors (Switzerland). 20, 2, 436.

    Research output: Contribution to journalArticle

    Open Access
  • Reduction of Contact Resistivity by Nano-Textured Contact

    Tsui, B. Y., Lee, Y. H. & Lee, C. Y., 2020, (Accepted/In press) In : Journal of Electronic Materials.

    Research output: Contribution to journalArticle

  • Schottky barrier diodes isolated by local oxidation of SiC (LOCOSiC) using pre-amorphization implantation technology

    Cheng, J. C., Lee, J. E. & Tsui, B-Y., Sep 2020, In : Solid-State Electronics. 171, 107834.

    Research output: Contribution to journalArticle