Equipments Details
Description
功能：薄膜濺鍍
重要規格： (1) 人機界面. (2) 3支6吋濺鍍陰極. (3) 可放6片WAFER(6吋or4吋皆可，可自行分配，共6片). (4) POWER: DC:2500W*2台與RF:1000W*1台. (5) 氣體：MFC for Ar、N2與O2. (6) 抽氣系統：RP + Cryo Pump. (7) 可鍍多層膜. (8) 基板載台轉速0~30rpm，可調控. (9) 可升溫至300℃
重要規格： (1) 人機界面. (2) 3支6吋濺鍍陰極. (3) 可放6片WAFER(6吋or4吋皆可，可自行分配，共6片). (4) POWER: DC:2500W*2台與RF:1000W*1台. (5) 氣體：MFC for Ar、N2與O2. (6) 抽氣系統：RP + Cryo Pump. (7) 可鍍多層膜. (8) 基板載台轉速0~30rpm，可調控. (9) 可升溫至300℃
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Details
| Name | Kao Duen Technology Corporation |
|---|---|
| Manufacturers | Kao Duen Technology Corporation |
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